TY  - JOUR
AU  - Jovanović, Zoran M.
AU  - Trstenjak, Urška
AU  - Ho, Hsin-Chia
AU  - Butsyk, Olena
AU  - Chen, Binbin
AU  - Tchernychova, Elena
AU  - Borodavka, Fedir
AU  - Koster, Gertjan
AU  - Hlinka, Jiří
AU  - Spreitzer, Matjaž
PY  - 2023
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/10623
AB  - The application of two-dimensional (2D) materials
has alleviated a number of challenges of traditional epitaxy and
pushed forward the integration of dissimilar materials. Besides
acting as a seed layer for van der Waals epitaxy, the 2D materials�
being atom(s) thick�have also enabled wetting transparency in
which the potential field of the substrate, although partially
screened, is still capable of imposing epitaxial overgrowth. One of
the crucial steps in this technology is the preservation of the quality
of 2D materials during and after their transfer to a substrate of
interest. In the present study, we show that by honing the
achievements of traditional epitaxy and wet chemistry a hybrid
approach can be devised that offers a unique perspective for the
integration of functional oxides with a silicon platform. It is based
on SrO-assisted deoxidation and controllable coverage of silicon surface with a layer(s) of spin-coated graphene oxide, thus
simultaneously allowing both direct and van der Waals epitaxy of SrTiO3 (STO). We were able to grow a high-quality STO pseudosubstrate suitable for further overgrowth of functional oxides, such as PbZr1−xTixO3 (PZT). Given that the quality of the films grown
on a reduced graphene oxide-buffer layer was almost identical to that obtained on SiC-derived graphene, we believe that this
approach may provide new routes for direct and “remote” epitaxy or layer-transfer techniques of dissimilar material systems.
T2  - ACS Applied Materials and Interfaces
T1  - Tiling the Silicon for Added Functionality: PLD Growth of Highly
Crystalline STO and PZT on Graphene Oxide-Buffered Silicon Surface
VL  - 15
SP  - 6058
EP  - 6068
DO  - 10.1021/acsami.2c17351
ER  - 

@article{
author = "Jovanović, Zoran M. and Trstenjak, Urška and Ho, Hsin-Chia and Butsyk, Olena and Chen, Binbin and Tchernychova, Elena and Borodavka, Fedir and Koster, Gertjan and Hlinka, Jiří and Spreitzer, Matjaž",
year = "2023",
abstract = "The application of two-dimensional (2D) materials
has alleviated a number of challenges of traditional epitaxy and
pushed forward the integration of dissimilar materials. Besides
acting as a seed layer for van der Waals epitaxy, the 2D materials�
being atom(s) thick�have also enabled wetting transparency in
which the potential field of the substrate, although partially
screened, is still capable of imposing epitaxial overgrowth. One of
the crucial steps in this technology is the preservation of the quality
of 2D materials during and after their transfer to a substrate of
interest. In the present study, we show that by honing the
achievements of traditional epitaxy and wet chemistry a hybrid
approach can be devised that offers a unique perspective for the
integration of functional oxides with a silicon platform. It is based
on SrO-assisted deoxidation and controllable coverage of silicon surface with a layer(s) of spin-coated graphene oxide, thus
simultaneously allowing both direct and van der Waals epitaxy of SrTiO3 (STO). We were able to grow a high-quality STO pseudosubstrate suitable for further overgrowth of functional oxides, such as PbZr1−xTixO3 (PZT). Given that the quality of the films grown
on a reduced graphene oxide-buffer layer was almost identical to that obtained on SiC-derived graphene, we believe that this
approach may provide new routes for direct and “remote” epitaxy or layer-transfer techniques of dissimilar material systems.",
journal = "ACS Applied Materials and Interfaces",
title = "Tiling the Silicon for Added Functionality: PLD Growth of Highly
Crystalline STO and PZT on Graphene Oxide-Buffered Silicon Surface",
volume = "15",
pages = "6058-6068",
doi = "10.1021/acsami.2c17351"
}

Jovanović, Z. M., Trstenjak, U., Ho, H., Butsyk, O., Chen, B., Tchernychova, E., Borodavka, F., Koster, G., Hlinka, J.,& Spreitzer, M.. (2023). Tiling the Silicon for Added Functionality: PLD Growth of Highly
Crystalline STO and PZT on Graphene Oxide-Buffered Silicon Surface. in ACS Applied Materials and Interfaces, 15, 6058-6068.
https://doi.org/10.1021/acsami.2c17351

Jovanović ZM, Trstenjak U, Ho H, Butsyk O, Chen B, Tchernychova E, Borodavka F, Koster G, Hlinka J, Spreitzer M. Tiling the Silicon for Added Functionality: PLD Growth of Highly
Crystalline STO and PZT on Graphene Oxide-Buffered Silicon Surface. in ACS Applied Materials and Interfaces. 2023;15:6058-6068.
doi:10.1021/acsami.2c17351 .

Jovanović, Zoran M., Trstenjak, Urška, Ho, Hsin-Chia, Butsyk, Olena, Chen, Binbin, Tchernychova, Elena, Borodavka, Fedir, Koster, Gertjan, Hlinka, Jiří, Spreitzer, Matjaž, "Tiling the Silicon for Added Functionality: PLD Growth of Highly
Crystalline STO and PZT on Graphene Oxide-Buffered Silicon Surface" in ACS Applied Materials and Interfaces, 15 (2023):6058-6068,
https://doi.org/10.1021/acsami.2c17351 . .

TY  - CONF
AU  - Spreitzer, Matjaž
AU  - Bučar, Lucija
AU  - Ho, Hsin-Chia
AU  - Trstenjak, Urška
AU  - Jovanović, Zoran
AU  - Koster, Gertjan
PY  - 2023
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/11631
AB  - Epitaxial integration of transition metal oxides with semiconductors offers various phenomena for novel device applications, specifically bringing ferroelectric, ferromagnetic, electro-optic, photocatalytic, multiferroic, piezoelectric and other properties to the wellestablished silicon platform. A convenient way of integrating functional oxides with Si(001) substrate is through a SrTiO3 (STO) intermediate layer, which can be fabricated on Si(001) in epitaxial form and with high crystallinity using. The epitaxial growth of functional oxides on silicon substrates requires atomically defined surfaces, which are most effectively prepared using SrO- or Sr-induced deoxidation and passivation. As-prepared surfaces enable overgrowth with various oxides for novel device applications. In our work pulsed laser deposition (PLD) was used to integrate oxides with silicon. We showed the ability to prepare highly-ordered sub-monolayer SrO- and Sr-based surface structures, including two-domain (2×3)+(3×2) pattern at 1/6 ML Sr coverage as determined by the reflection high-energy electron diffraction (RHEED) technique. On the passivated silicon surface epitaxial layers of STO was grown by the method of kinetically controlled sequential deposition. Detailed study of initial deposition parameters proved to be extremely important in achieving epitaxial relation of STO with the underlying substrate. On as-prepared pseudo-substrate different functional films were gown for applications in microelectromechanical systems and electrochemical devices.
PB  - Belgrade : Serbian Ceramic Society
C3  - Advanced Ceramics and Application :11th Serbian Ceramic Society Conference : program and the book of abstracts; September 18-20, 2023; Belgrade
T1  - Epitaxial oxides on semiconductors: growth perspectives and device applications
SP  - 32
UR  - https://hdl.handle.net/21.15107/rcub_vinar_11631
ER  - 

@conference{
author = "Spreitzer, Matjaž and Bučar, Lucija and Ho, Hsin-Chia and Trstenjak, Urška and Jovanović, Zoran and Koster, Gertjan",
year = "2023",
abstract = "Epitaxial integration of transition metal oxides with semiconductors offers various phenomena for novel device applications, specifically bringing ferroelectric, ferromagnetic, electro-optic, photocatalytic, multiferroic, piezoelectric and other properties to the wellestablished silicon platform. A convenient way of integrating functional oxides with Si(001) substrate is through a SrTiO3 (STO) intermediate layer, which can be fabricated on Si(001) in epitaxial form and with high crystallinity using. The epitaxial growth of functional oxides on silicon substrates requires atomically defined surfaces, which are most effectively prepared using SrO- or Sr-induced deoxidation and passivation. As-prepared surfaces enable overgrowth with various oxides for novel device applications. In our work pulsed laser deposition (PLD) was used to integrate oxides with silicon. We showed the ability to prepare highly-ordered sub-monolayer SrO- and Sr-based surface structures, including two-domain (2×3)+(3×2) pattern at 1/6 ML Sr coverage as determined by the reflection high-energy electron diffraction (RHEED) technique. On the passivated silicon surface epitaxial layers of STO was grown by the method of kinetically controlled sequential deposition. Detailed study of initial deposition parameters proved to be extremely important in achieving epitaxial relation of STO with the underlying substrate. On as-prepared pseudo-substrate different functional films were gown for applications in microelectromechanical systems and electrochemical devices.",
publisher = "Belgrade : Serbian Ceramic Society",
journal = "Advanced Ceramics and Application :11th Serbian Ceramic Society Conference : program and the book of abstracts; September 18-20, 2023; Belgrade",
title = "Epitaxial oxides on semiconductors: growth perspectives and device applications",
pages = "32",
url = "https://hdl.handle.net/21.15107/rcub_vinar_11631"
}

Spreitzer, M., Bučar, L., Ho, H., Trstenjak, U., Jovanović, Z.,& Koster, G.. (2023). Epitaxial oxides on semiconductors: growth perspectives and device applications. in Advanced Ceramics and Application :11th Serbian Ceramic Society Conference : program and the book of abstracts; September 18-20, 2023; Belgrade
Belgrade : Serbian Ceramic Society., 32.
https://hdl.handle.net/21.15107/rcub_vinar_11631

Spreitzer M, Bučar L, Ho H, Trstenjak U, Jovanović Z, Koster G. Epitaxial oxides on semiconductors: growth perspectives and device applications. in Advanced Ceramics and Application :11th Serbian Ceramic Society Conference : program and the book of abstracts; September 18-20, 2023; Belgrade. 2023;:32.
https://hdl.handle.net/21.15107/rcub_vinar_11631 .

Spreitzer, Matjaž, Bučar, Lucija, Ho, Hsin-Chia, Trstenjak, Urška, Jovanović, Zoran, Koster, Gertjan, "Epitaxial oxides on semiconductors: growth perspectives and device applications" in Advanced Ceramics and Application :11th Serbian Ceramic Society Conference : program and the book of abstracts; September 18-20, 2023; Belgrade (2023):32,
https://hdl.handle.net/21.15107/rcub_vinar_11631 .

TY  - CONF
AU  - Petković, Darija
AU  - Chia-Ho, Hsin
AU  - Trstenjak, Urška
AU  - Kovač, Janez
AU  - Vengust, Damjan
AU  - Spreitzer, Matjaž
AU  - Jovanović, Zoran
PY  - 2023
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12327
AB  - Epitaxy represents a process of crystal growth or material deposition in which the new created layers have a high degree of crystallographic alignment with the substrate lattice. In this research 10 nm-thick thin films of strontium titanate (STO) were grown using pulsed laser deposition (PLD) method on Si(001) whose surface was either deoxidized with strontium oxide (SrO) or buffered by reduced graphene oxide (rGO) in combination with SrO deoxidation. In addition to differently prepared Si(001) surface, the effect of deposition temperature on the crystalline structure of the STO thin films was also examined. Reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray reflectivity (XRR) and X-ray photoelectron spectroscopy (XPS) methods were used to examine the properties of the grown films. It was concluded that the STO thin film grown on the rGO-coated Si substrate at 515 °C shows the highest crystallinity with a smooth surface, while the film deposited on the bare silicon has amorphous structure. The STO films grown at 700 °C show textured or polycrystalline structure. Good crystallinity, epitaxial alignment, and clean interface are the major requirements for STO/Si and the STO/rGO/Si heterostructure for making an efficient and stable Si photocathode for the photoelectrochemical (PEC) water splitting. Our future work will be directed toward understanding how the obtained interfaces and crystalline structure of STO films are influencing the PEC process.
PB  - Belgrade : Institute of Technical Sciences of SASA
C3  - 21st Young Researchers' Conference Materials Sciences and Engineering : program and the book of abstracts
T1  - PLD growth of strontium titanate thin films on SrO-deoxidized and rGO-buffered Si(001) substrate
SP  - 60
EP  - 60
UR  - https://hdl.handle.net/21.15107/rcub_vinar_12327
ER  - 

@conference{
author = "Petković, Darija and Chia-Ho, Hsin and Trstenjak, Urška and Kovač, Janez and Vengust, Damjan and Spreitzer, Matjaž and Jovanović, Zoran",
year = "2023",
abstract = "Epitaxy represents a process of crystal growth or material deposition in which the new created layers have a high degree of crystallographic alignment with the substrate lattice. In this research 10 nm-thick thin films of strontium titanate (STO) were grown using pulsed laser deposition (PLD) method on Si(001) whose surface was either deoxidized with strontium oxide (SrO) or buffered by reduced graphene oxide (rGO) in combination with SrO deoxidation. In addition to differently prepared Si(001) surface, the effect of deposition temperature on the crystalline structure of the STO thin films was also examined. Reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray reflectivity (XRR) and X-ray photoelectron spectroscopy (XPS) methods were used to examine the properties of the grown films. It was concluded that the STO thin film grown on the rGO-coated Si substrate at 515 °C shows the highest crystallinity with a smooth surface, while the film deposited on the bare silicon has amorphous structure. The STO films grown at 700 °C show textured or polycrystalline structure. Good crystallinity, epitaxial alignment, and clean interface are the major requirements for STO/Si and the STO/rGO/Si heterostructure for making an efficient and stable Si photocathode for the photoelectrochemical (PEC) water splitting. Our future work will be directed toward understanding how the obtained interfaces and crystalline structure of STO films are influencing the PEC process.",
publisher = "Belgrade : Institute of Technical Sciences of SASA",
journal = "21st Young Researchers' Conference Materials Sciences and Engineering : program and the book of abstracts",
title = "PLD growth of strontium titanate thin films on SrO-deoxidized and rGO-buffered Si(001) substrate",
pages = "60-60",
url = "https://hdl.handle.net/21.15107/rcub_vinar_12327"
}

Petković, D., Chia-Ho, H., Trstenjak, U., Kovač, J., Vengust, D., Spreitzer, M.,& Jovanović, Z.. (2023). PLD growth of strontium titanate thin films on SrO-deoxidized and rGO-buffered Si(001) substrate. in 21st Young Researchers' Conference Materials Sciences and Engineering : program and the book of abstracts
Belgrade : Institute of Technical Sciences of SASA., 60-60.
https://hdl.handle.net/21.15107/rcub_vinar_12327

Petković D, Chia-Ho H, Trstenjak U, Kovač J, Vengust D, Spreitzer M, Jovanović Z. PLD growth of strontium titanate thin films on SrO-deoxidized and rGO-buffered Si(001) substrate. in 21st Young Researchers' Conference Materials Sciences and Engineering : program and the book of abstracts. 2023;:60-60.
https://hdl.handle.net/21.15107/rcub_vinar_12327 .

Petković, Darija, Chia-Ho, Hsin, Trstenjak, Urška, Kovač, Janez, Vengust, Damjan, Spreitzer, Matjaž, Jovanović, Zoran, "PLD growth of strontium titanate thin films on SrO-deoxidized and rGO-buffered Si(001) substrate" in 21st Young Researchers' Conference Materials Sciences and Engineering : program and the book of abstracts (2023):60-60,
https://hdl.handle.net/21.15107/rcub_vinar_12327 .

TY  - CONF
AU  - Petković, Darija
AU  - Chia-Ho, Hsin
AU  - Trstenjak, Urška
AU  - Kovač, Janez
AU  - Vengust, Damjan
AU  - Jovanović, Zoran
AU  - Spreitzer, Matjaž
PY  - 2023
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12333
AB  - Epitaxial films of metal oxides deposited on silicon substrates represent a new type of material that could be used as protective (or electroactive) layer in the photoelectrochemical water splitting. To understand the influence of crystalline and interfacial properties of oxide layer on the water splitting process a ~10 nm strontium titanate (STO) films have been grown using the PLD method on bare and reduced graphene oxide (rGO) buffered silicon substrate. Our approach relied on the oxide-silicon integration using combination of SrO-assisted deoxidation and controllable coverage of silicon surface with a mono- to threelayer of spin-coated GO. The STO films have been grown at 515 and 700 °C and various experimental techniques were used to examine the surface and crystalline properties of grown films (reflection high energy electron diffraction, atomic force microscopy, scanning electron microscopy, X-ray diffraction, X-ray reflectivity and X-ray photoelectron spectroscopy). The results show that the best the crystallinity of the STO thin films was obtained on rGO/SrO deoxidized silicon surface at 515 °C. Future studies will be devoted to electrochemical characterization of the grown films, that will help to establish clearer link on how the interface and crystalline parameters affect the water splitting process.
PB  - EU COST Action OPERA
C3  - Workshop “Application-oriented material development” : Book of abstracts
T1  - PLD growth of strontium titanate thin films on silicon substrate for photoelectrochemical water-splitting
UR  - https://hdl.handle.net/21.15107/rcub_vinar_12333
ER  - 

@conference{
author = "Petković, Darija and Chia-Ho, Hsin and Trstenjak, Urška and Kovač, Janez and Vengust, Damjan and Jovanović, Zoran and Spreitzer, Matjaž",
year = "2023",
abstract = "Epitaxial films of metal oxides deposited on silicon substrates represent a new type of material that could be used as protective (or electroactive) layer in the photoelectrochemical water splitting. To understand the influence of crystalline and interfacial properties of oxide layer on the water splitting process a ~10 nm strontium titanate (STO) films have been grown using the PLD method on bare and reduced graphene oxide (rGO) buffered silicon substrate. Our approach relied on the oxide-silicon integration using combination of SrO-assisted deoxidation and controllable coverage of silicon surface with a mono- to threelayer of spin-coated GO. The STO films have been grown at 515 and 700 °C and various experimental techniques were used to examine the surface and crystalline properties of grown films (reflection high energy electron diffraction, atomic force microscopy, scanning electron microscopy, X-ray diffraction, X-ray reflectivity and X-ray photoelectron spectroscopy). The results show that the best the crystallinity of the STO thin films was obtained on rGO/SrO deoxidized silicon surface at 515 °C. Future studies will be devoted to electrochemical characterization of the grown films, that will help to establish clearer link on how the interface and crystalline parameters affect the water splitting process.",
publisher = "EU COST Action OPERA",
journal = "Workshop “Application-oriented material development” : Book of abstracts",
title = "PLD growth of strontium titanate thin films on silicon substrate for photoelectrochemical water-splitting",
url = "https://hdl.handle.net/21.15107/rcub_vinar_12333"
}

Petković, D., Chia-Ho, H., Trstenjak, U., Kovač, J., Vengust, D., Jovanović, Z.,& Spreitzer, M.. (2023). PLD growth of strontium titanate thin films on silicon substrate for photoelectrochemical water-splitting. in Workshop “Application-oriented material development” : Book of abstracts
EU COST Action OPERA..
https://hdl.handle.net/21.15107/rcub_vinar_12333

Petković D, Chia-Ho H, Trstenjak U, Kovač J, Vengust D, Jovanović Z, Spreitzer M. PLD growth of strontium titanate thin films on silicon substrate for photoelectrochemical water-splitting. in Workshop “Application-oriented material development” : Book of abstracts. 2023;.
https://hdl.handle.net/21.15107/rcub_vinar_12333 .

Petković, Darija, Chia-Ho, Hsin, Trstenjak, Urška, Kovač, Janez, Vengust, Damjan, Jovanović, Zoran, Spreitzer, Matjaž, "PLD growth of strontium titanate thin films on silicon substrate for photoelectrochemical water-splitting" in Workshop “Application-oriented material development” : Book of abstracts (2023),
https://hdl.handle.net/21.15107/rcub_vinar_12333 .

TY  - JOUR
AU  - Spreitzer, Matjaž
AU  - Klement, Dejan
AU  - Parkelj Potočnik, Tjaša
AU  - Trstenjak, Urška
AU  - Jovanović, Zoran M.
AU  - Nguyen, Minh Duc
AU  - Yuan, Huiyu
AU  - Ten Elshof, Johan Evert
AU  - Houwman, Evert
AU  - Koster, Gertjan
AU  - Rijnders, Guus
AU  - Fompeyrine, Jean
AU  - Kornblum, Lior
AU  - Fenning, David P.
AU  - Liang, Yunting
AU  - Tong, Wen-Yi
AU  - Ghosez, Philippe
PY  - 2021
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/9627
AB  - Functional oxides on silicon have been the subject of in-depth research for more than 20 years. Much of this research has been focused on the quality of the integration of materials due to their intrinsic thermodynamic incompatibility, which has hindered the flourishing of the field of research. Nevertheless, growth of epitaxial transition metal oxides on silicon with a sharp interface has been achieved by elaborated kinetically controlled sequential deposition while the crystalline quality of different functional oxides has been considerably improved. In this Research Update, we focus on three applications in which epitaxial ferroelectric oxides on silicon are at the forefront, and in each of these applications, other aspects of the integration of materials play an important role. These are the fields of piezoelectric microelectromechanical system devices, electro-optical components, and catalysis. The overview is supported by a brief analysis of the synthesis processes that enable epitaxial growth of oxides on silicon. This Research Update concludes with a theoretical description of the interfaces and the possibility of manipulating their electronic structure to achieve the desired coupling between (ferroelectric) oxides and semiconductors, which opens up a remarkable perspective for many advanced applications. © 2021 Author(s).
T2  - APL Materials
T1  - Epitaxial ferroelectric oxides on silicon with perspectives for future device applications
VL  - 9
IS  - 4
SP  - 040701
DO  - 10.1063/5.0039161
ER  - 

@article{
author = "Spreitzer, Matjaž and Klement, Dejan and Parkelj Potočnik, Tjaša and Trstenjak, Urška and Jovanović, Zoran M. and Nguyen, Minh Duc and Yuan, Huiyu and Ten Elshof, Johan Evert and Houwman, Evert and Koster, Gertjan and Rijnders, Guus and Fompeyrine, Jean and Kornblum, Lior and Fenning, David P. and Liang, Yunting and Tong, Wen-Yi and Ghosez, Philippe",
year = "2021",
abstract = "Functional oxides on silicon have been the subject of in-depth research for more than 20 years. Much of this research has been focused on the quality of the integration of materials due to their intrinsic thermodynamic incompatibility, which has hindered the flourishing of the field of research. Nevertheless, growth of epitaxial transition metal oxides on silicon with a sharp interface has been achieved by elaborated kinetically controlled sequential deposition while the crystalline quality of different functional oxides has been considerably improved. In this Research Update, we focus on three applications in which epitaxial ferroelectric oxides on silicon are at the forefront, and in each of these applications, other aspects of the integration of materials play an important role. These are the fields of piezoelectric microelectromechanical system devices, electro-optical components, and catalysis. The overview is supported by a brief analysis of the synthesis processes that enable epitaxial growth of oxides on silicon. This Research Update concludes with a theoretical description of the interfaces and the possibility of manipulating their electronic structure to achieve the desired coupling between (ferroelectric) oxides and semiconductors, which opens up a remarkable perspective for many advanced applications. © 2021 Author(s).",
journal = "APL Materials",
title = "Epitaxial ferroelectric oxides on silicon with perspectives for future device applications",
volume = "9",
number = "4",
pages = "040701",
doi = "10.1063/5.0039161"
}

Spreitzer, M., Klement, D., Parkelj Potočnik, T., Trstenjak, U., Jovanović, Z. M., Nguyen, M. D., Yuan, H., Ten Elshof, J. E., Houwman, E., Koster, G., Rijnders, G., Fompeyrine, J., Kornblum, L., Fenning, D. P., Liang, Y., Tong, W.,& Ghosez, P.. (2021). Epitaxial ferroelectric oxides on silicon with perspectives for future device applications. in APL Materials, 9(4), 040701.
https://doi.org/10.1063/5.0039161

Spreitzer M, Klement D, Parkelj Potočnik T, Trstenjak U, Jovanović ZM, Nguyen MD, Yuan H, Ten Elshof JE, Houwman E, Koster G, Rijnders G, Fompeyrine J, Kornblum L, Fenning DP, Liang Y, Tong W, Ghosez P. Epitaxial ferroelectric oxides on silicon with perspectives for future device applications. in APL Materials. 2021;9(4):040701.
doi:10.1063/5.0039161 .

Spreitzer, Matjaž, Klement, Dejan, Parkelj Potočnik, Tjaša, Trstenjak, Urška, Jovanović, Zoran M., Nguyen, Minh Duc, Yuan, Huiyu, Ten Elshof, Johan Evert, Houwman, Evert, Koster, Gertjan, Rijnders, Guus, Fompeyrine, Jean, Kornblum, Lior, Fenning, David P., Liang, Yunting, Tong, Wen-Yi, Ghosez, Philippe, "Epitaxial ferroelectric oxides on silicon with perspectives for future device applications" in APL Materials, 9, no. 4 (2021):040701,
https://doi.org/10.1063/5.0039161 . .