TY  - CONF
AU  - Stanković, Srboljub
AU  - Ilić, R.
AU  - Jakšić, A.
AU  - Nikolić, D.
AU  - Kržanović, Nikola
PY  - 2017
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/11955
AB  - In this study conducted numerical experiments aimed to determine the physical shielding factors (PSF) for two different MOSFET structures. The purpose of this paper was to present the new possibilities of the Monte Carlo numerical simulations for interaction of gamma irradiation of 60 Co and 137 Cs with semiconductor devices that are often located as dosimeters together with complex electronics power systems. The transport of incident photon particles is simulated with Monte Carlo code FOTELP-2014. When kovar is used as a lid in the gamma radiation field, the implemented calculations show that the PSF values for the ESAPMOS RADFET structure are significantly higher than the PSF values for the standard MOSFET structure.
PB  - IEEE
C3  - IEEE : 30th International Conference on Microelectronics (MIEL) : Proceedings book
T1  - Numerical Computation of the Physical Shielding Factor for DIfferent Structures of MOSFET in Gamma Irradiation Field
SP  - 175
EP  - 178
DO  - 10.1109/MIEL.2017.8190096
ER  - 

@conference{
author = "Stanković, Srboljub and Ilić, R. and Jakšić, A. and Nikolić, D. and Kržanović, Nikola",
year = "2017",
abstract = "In this study conducted numerical experiments aimed to determine the physical shielding factors (PSF) for two different MOSFET structures. The purpose of this paper was to present the new possibilities of the Monte Carlo numerical simulations for interaction of gamma irradiation of 60 Co and 137 Cs with semiconductor devices that are often located as dosimeters together with complex electronics power systems. The transport of incident photon particles is simulated with Monte Carlo code FOTELP-2014. When kovar is used as a lid in the gamma radiation field, the implemented calculations show that the PSF values for the ESAPMOS RADFET structure are significantly higher than the PSF values for the standard MOSFET structure.",
publisher = "IEEE",
journal = "IEEE : 30th International Conference on Microelectronics (MIEL) : Proceedings book",
title = "Numerical Computation of the Physical Shielding Factor for DIfferent Structures of MOSFET in Gamma Irradiation Field",
pages = "175-178",
doi = "10.1109/MIEL.2017.8190096"
}

Stanković, S., Ilić, R., Jakšić, A., Nikolić, D.,& Kržanović, N.. (2017). Numerical Computation of the Physical Shielding Factor for DIfferent Structures of MOSFET in Gamma Irradiation Field. in IEEE : 30th International Conference on Microelectronics (MIEL) : Proceedings book
IEEE., 175-178.
https://doi.org/10.1109/MIEL.2017.8190096

Stanković S, Ilić R, Jakšić A, Nikolić D, Kržanović N. Numerical Computation of the Physical Shielding Factor for DIfferent Structures of MOSFET in Gamma Irradiation Field. in IEEE : 30th International Conference on Microelectronics (MIEL) : Proceedings book. 2017;:175-178.
doi:10.1109/MIEL.2017.8190096 .

Stanković, Srboljub, Ilić, R., Jakšić, A., Nikolić, D., Kržanović, Nikola, "Numerical Computation of the Physical Shielding Factor for DIfferent Structures of MOSFET in Gamma Irradiation Field" in IEEE : 30th International Conference on Microelectronics (MIEL) : Proceedings book (2017):175-178,
https://doi.org/10.1109/MIEL.2017.8190096 . .