TY  - JOUR
AU  - Spreitzer, Matjaž
AU  - Klement, Dejan
AU  - Parkelj Potočnik, Tjaša
AU  - Trstenjak, Urška
AU  - Jovanović, Zoran M.
AU  - Nguyen, Minh Duc
AU  - Yuan, Huiyu
AU  - Ten Elshof, Johan Evert
AU  - Houwman, Evert
AU  - Koster, Gertjan
AU  - Rijnders, Guus
AU  - Fompeyrine, Jean
AU  - Kornblum, Lior
AU  - Fenning, David P.
AU  - Liang, Yunting
AU  - Tong, Wen-Yi
AU  - Ghosez, Philippe
PY  - 2021
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/9627
AB  - Functional oxides on silicon have been the subject of in-depth research for more than 20 years. Much of this research has been focused on the quality of the integration of materials due to their intrinsic thermodynamic incompatibility, which has hindered the flourishing of the field of research. Nevertheless, growth of epitaxial transition metal oxides on silicon with a sharp interface has been achieved by elaborated kinetically controlled sequential deposition while the crystalline quality of different functional oxides has been considerably improved. In this Research Update, we focus on three applications in which epitaxial ferroelectric oxides on silicon are at the forefront, and in each of these applications, other aspects of the integration of materials play an important role. These are the fields of piezoelectric microelectromechanical system devices, electro-optical components, and catalysis. The overview is supported by a brief analysis of the synthesis processes that enable epitaxial growth of oxides on silicon. This Research Update concludes with a theoretical description of the interfaces and the possibility of manipulating their electronic structure to achieve the desired coupling between (ferroelectric) oxides and semiconductors, which opens up a remarkable perspective for many advanced applications. © 2021 Author(s).
T2  - APL Materials
T1  - Epitaxial ferroelectric oxides on silicon with perspectives for future device applications
VL  - 9
IS  - 4
SP  - 040701
DO  - 10.1063/5.0039161
ER  - 

@article{
author = "Spreitzer, Matjaž and Klement, Dejan and Parkelj Potočnik, Tjaša and Trstenjak, Urška and Jovanović, Zoran M. and Nguyen, Minh Duc and Yuan, Huiyu and Ten Elshof, Johan Evert and Houwman, Evert and Koster, Gertjan and Rijnders, Guus and Fompeyrine, Jean and Kornblum, Lior and Fenning, David P. and Liang, Yunting and Tong, Wen-Yi and Ghosez, Philippe",
year = "2021",
abstract = "Functional oxides on silicon have been the subject of in-depth research for more than 20 years. Much of this research has been focused on the quality of the integration of materials due to their intrinsic thermodynamic incompatibility, which has hindered the flourishing of the field of research. Nevertheless, growth of epitaxial transition metal oxides on silicon with a sharp interface has been achieved by elaborated kinetically controlled sequential deposition while the crystalline quality of different functional oxides has been considerably improved. In this Research Update, we focus on three applications in which epitaxial ferroelectric oxides on silicon are at the forefront, and in each of these applications, other aspects of the integration of materials play an important role. These are the fields of piezoelectric microelectromechanical system devices, electro-optical components, and catalysis. The overview is supported by a brief analysis of the synthesis processes that enable epitaxial growth of oxides on silicon. This Research Update concludes with a theoretical description of the interfaces and the possibility of manipulating their electronic structure to achieve the desired coupling between (ferroelectric) oxides and semiconductors, which opens up a remarkable perspective for many advanced applications. © 2021 Author(s).",
journal = "APL Materials",
title = "Epitaxial ferroelectric oxides on silicon with perspectives for future device applications",
volume = "9",
number = "4",
pages = "040701",
doi = "10.1063/5.0039161"
}

Spreitzer, M., Klement, D., Parkelj Potočnik, T., Trstenjak, U., Jovanović, Z. M., Nguyen, M. D., Yuan, H., Ten Elshof, J. E., Houwman, E., Koster, G., Rijnders, G., Fompeyrine, J., Kornblum, L., Fenning, D. P., Liang, Y., Tong, W.,& Ghosez, P.. (2021). Epitaxial ferroelectric oxides on silicon with perspectives for future device applications. in APL Materials, 9(4), 040701.
https://doi.org/10.1063/5.0039161

Spreitzer M, Klement D, Parkelj Potočnik T, Trstenjak U, Jovanović ZM, Nguyen MD, Yuan H, Ten Elshof JE, Houwman E, Koster G, Rijnders G, Fompeyrine J, Kornblum L, Fenning DP, Liang Y, Tong W, Ghosez P. Epitaxial ferroelectric oxides on silicon with perspectives for future device applications. in APL Materials. 2021;9(4):040701.
doi:10.1063/5.0039161 .

Spreitzer, Matjaž, Klement, Dejan, Parkelj Potočnik, Tjaša, Trstenjak, Urška, Jovanović, Zoran M., Nguyen, Minh Duc, Yuan, Huiyu, Ten Elshof, Johan Evert, Houwman, Evert, Koster, Gertjan, Rijnders, Guus, Fompeyrine, Jean, Kornblum, Lior, Fenning, David P., Liang, Yunting, Tong, Wen-Yi, Ghosez, Philippe, "Epitaxial ferroelectric oxides on silicon with perspectives for future device applications" in APL Materials, 9, no. 4 (2021):040701,
https://doi.org/10.1063/5.0039161 . .

TY  - JOUR
AU  - Chen, Binbin
AU  - Gauquelin, Nicolas
AU  - Jannis, Daen
AU  - Cunha, Daniel M.
AU  - Halisdemir, Ufuk
AU  - Piamonteze, Cinthia
AU  - Lee, Jin Hong
AU  - Belhadi, Jamal
AU  - Eltes, Felix
AU  - Abel, Stefan
AU  - Jovanović, Zoran
AU  - Spreitzer, Matjaž
AU  - Fompeyrine, Jean
AU  - Verbeeck, Johan
AU  - Bibes, Manuel
AU  - Huijben, Mark
AU  - Rijnders, Guus
AU  - Koster, Gertjan
PY  - 2020
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/9759
AB  - Epitaxial growth of SrTiO3 (STO) on silicon greatly accelerates the monolithic integration of multifunctional oxides into the mainstream semiconductor electronics. However, oxide superlattices (SLs), the birthplace of many exciting discoveries, remain largely unexplored on silicon. In this work, LaNiO3/LaFeO3 SLs are synthesized on STO-buffered silicon (Si/STO) and STO single-crystal substrates, and their electronic properties are compared using dc transport and X-ray absorption spectroscopy. Both sets of SLs show a similar thickness-driven metal-to-insulator transition, albeit with resistivity and transition temperature modified by the different amounts of strain. In particular, the large tensile strain promotes a pronounced Ni (Formula presented.) orbital polarization for the SL grown on Si/STO, comparable to that reported for LaNiO3 SL epitaxially strained to DyScO3 substrate. Those results illustrate the ability to integrate oxide SLs on silicon with structure and property approaching their counterparts grown on STO single crystal, and also open up new prospects of strain engineering in functional oxides based on the Si platform. © 2020 The Authors. Advanced Materials published by Wiley-VCH GmbH
T2  - Advanced Materials
T1  - Strain-Engineered Metal-to-Insulator Transition and Orbital Polarization in Nickelate Superlattices Integrated on Silicon
DO  - 10.1002/adma.202004995
ER  - 

@article{
author = "Chen, Binbin and Gauquelin, Nicolas and Jannis, Daen and Cunha, Daniel M. and Halisdemir, Ufuk and Piamonteze, Cinthia and Lee, Jin Hong and Belhadi, Jamal and Eltes, Felix and Abel, Stefan and Jovanović, Zoran and Spreitzer, Matjaž and Fompeyrine, Jean and Verbeeck, Johan and Bibes, Manuel and Huijben, Mark and Rijnders, Guus and Koster, Gertjan",
year = "2020",
abstract = "Epitaxial growth of SrTiO3 (STO) on silicon greatly accelerates the monolithic integration of multifunctional oxides into the mainstream semiconductor electronics. However, oxide superlattices (SLs), the birthplace of many exciting discoveries, remain largely unexplored on silicon. In this work, LaNiO3/LaFeO3 SLs are synthesized on STO-buffered silicon (Si/STO) and STO single-crystal substrates, and their electronic properties are compared using dc transport and X-ray absorption spectroscopy. Both sets of SLs show a similar thickness-driven metal-to-insulator transition, albeit with resistivity and transition temperature modified by the different amounts of strain. In particular, the large tensile strain promotes a pronounced Ni (Formula presented.) orbital polarization for the SL grown on Si/STO, comparable to that reported for LaNiO3 SL epitaxially strained to DyScO3 substrate. Those results illustrate the ability to integrate oxide SLs on silicon with structure and property approaching their counterparts grown on STO single crystal, and also open up new prospects of strain engineering in functional oxides based on the Si platform. © 2020 The Authors. Advanced Materials published by Wiley-VCH GmbH",
journal = "Advanced Materials",
title = "Strain-Engineered Metal-to-Insulator Transition and Orbital Polarization in Nickelate Superlattices Integrated on Silicon",
doi = "10.1002/adma.202004995"
}

Chen, B., Gauquelin, N., Jannis, D., Cunha, D. M., Halisdemir, U., Piamonteze, C., Lee, J. H., Belhadi, J., Eltes, F., Abel, S., Jovanović, Z., Spreitzer, M., Fompeyrine, J., Verbeeck, J., Bibes, M., Huijben, M., Rijnders, G.,& Koster, G.. (2020). Strain-Engineered Metal-to-Insulator Transition and Orbital Polarization in Nickelate Superlattices Integrated on Silicon. in Advanced Materials.
https://doi.org/10.1002/adma.202004995

Chen B, Gauquelin N, Jannis D, Cunha DM, Halisdemir U, Piamonteze C, Lee JH, Belhadi J, Eltes F, Abel S, Jovanović Z, Spreitzer M, Fompeyrine J, Verbeeck J, Bibes M, Huijben M, Rijnders G, Koster G. Strain-Engineered Metal-to-Insulator Transition and Orbital Polarization in Nickelate Superlattices Integrated on Silicon. in Advanced Materials. 2020;.
doi:10.1002/adma.202004995 .

Chen, Binbin, Gauquelin, Nicolas, Jannis, Daen, Cunha, Daniel M., Halisdemir, Ufuk, Piamonteze, Cinthia, Lee, Jin Hong, Belhadi, Jamal, Eltes, Felix, Abel, Stefan, Jovanović, Zoran, Spreitzer, Matjaž, Fompeyrine, Jean, Verbeeck, Johan, Bibes, Manuel, Huijben, Mark, Rijnders, Guus, Koster, Gertjan, "Strain-Engineered Metal-to-Insulator Transition and Orbital Polarization in Nickelate Superlattices Integrated on Silicon" in Advanced Materials (2020),
https://doi.org/10.1002/adma.202004995 . .