TY  - CONF
AU  - Kokkoris, Michael
AU  - Androulakaki, Effrossyni G.
AU  - Czyzycki, Mateusz
AU  - Erich, Marko
AU  - Karydas, Andreas G.
AU  - Leani, Juan J.
AU  - Migliori, Alessandro
AU  - Ntemou, Eleni
AU  - Paneta, Valentina
AU  - Petrović, Srđan M.
PY  - 2019
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/8396
AB  - Synchrotron-radiation based techniques have recently emerged as serious competitors to traditional nuclear analytical ones, not only in the characterization of various materials, but also when the depth profiling of ultra-thin surface layers is concerned. The main goal of the present work was to investigate the applicability of Grazing Incidence X-Ray Fluorescence (GIXRF) and Rutherford/Elastic Backscattering Spectrometry (RBS/EBS) techniques with respect to the accurate quantitative determination of the retained doses of Ar ions deep implanted in random direction of Si [1 1 1] polished crystalline wafers. RBS/EBS measurements with protons and deuterons were taken along with GIXRF ones, the results were compared and an attempt was made to explain the occurring similarities and differences, along with the advantages and weaknesses of each applied analytical technique.
C3  - Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
T1  - Argon ions deeply implanted in silicon studied by Rutherford/Elastic Backscattering and Grazing Incidence X-ray Fluorescence spectroscopy
VL  - 450
SP  - 144
EP  - 148
DO  - 10.1016/j.nimb.2018.08.048
ER  - 

@conference{
author = "Kokkoris, Michael and Androulakaki, Effrossyni G. and Czyzycki, Mateusz and Erich, Marko and Karydas, Andreas G. and Leani, Juan J. and Migliori, Alessandro and Ntemou, Eleni and Paneta, Valentina and Petrović, Srđan M.",
year = "2019",
abstract = "Synchrotron-radiation based techniques have recently emerged as serious competitors to traditional nuclear analytical ones, not only in the characterization of various materials, but also when the depth profiling of ultra-thin surface layers is concerned. The main goal of the present work was to investigate the applicability of Grazing Incidence X-Ray Fluorescence (GIXRF) and Rutherford/Elastic Backscattering Spectrometry (RBS/EBS) techniques with respect to the accurate quantitative determination of the retained doses of Ar ions deep implanted in random direction of Si [1 1 1] polished crystalline wafers. RBS/EBS measurements with protons and deuterons were taken along with GIXRF ones, the results were compared and an attempt was made to explain the occurring similarities and differences, along with the advantages and weaknesses of each applied analytical technique.",
journal = "Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms",
title = "Argon ions deeply implanted in silicon studied by Rutherford/Elastic Backscattering and Grazing Incidence X-ray Fluorescence spectroscopy",
volume = "450",
pages = "144-148",
doi = "10.1016/j.nimb.2018.08.048"
}

Kokkoris, M., Androulakaki, E. G., Czyzycki, M., Erich, M., Karydas, A. G., Leani, J. J., Migliori, A., Ntemou, E., Paneta, V.,& Petrović, S. M.. (2019). Argon ions deeply implanted in silicon studied by Rutherford/Elastic Backscattering and Grazing Incidence X-ray Fluorescence spectroscopy. in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 450, 144-148.
https://doi.org/10.1016/j.nimb.2018.08.048

Kokkoris M, Androulakaki EG, Czyzycki M, Erich M, Karydas AG, Leani JJ, Migliori A, Ntemou E, Paneta V, Petrović SM. Argon ions deeply implanted in silicon studied by Rutherford/Elastic Backscattering and Grazing Incidence X-ray Fluorescence spectroscopy. in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 2019;450:144-148.
doi:10.1016/j.nimb.2018.08.048 .

Kokkoris, Michael, Androulakaki, Effrossyni G., Czyzycki, Mateusz, Erich, Marko, Karydas, Andreas G., Leani, Juan J., Migliori, Alessandro, Ntemou, Eleni, Paneta, Valentina, Petrović, Srđan M., "Argon ions deeply implanted in silicon studied by Rutherford/Elastic Backscattering and Grazing Incidence X-ray Fluorescence spectroscopy" in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 450 (2019):144-148,
https://doi.org/10.1016/j.nimb.2018.08.048 . .

TY  - JOUR
AU  - Flessa, Aikaterini
AU  - Ntemou, Eleni
AU  - Kokkoris, Michael
AU  - Liarokapis, Efthymios
AU  - Gloginjić, Marko
AU  - Petrović, Srđan M.
AU  - Erich, Marko
AU  - Fazinić, Stjepko
AU  - Karlušić, Marko
AU  - Tomić, Kristina
PY  - 2019
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/8439
AB  - A 6H-SiC single crystal implanted in channeling mode by 4-MeV C+3 and Si+3 ions at various doping levels has been examined by scanning electron microscopy (SEM) and micro-Raman spectroscopy in order to study the lattice distortions inflicted by the impinging ions. C ions create zones of strongly damaged regions, parallel to the front face of the wafer with width increasing with the amount of doping. As expected, Si has induced considerably more lattice distortions than C, and more than one order of magnitude less doping induces apparently the same effect as C. Despite the large laser spot size compared with the boundaries of the distorted regions, micro-Raman data provided results agreeing with the SEM pictures and the Monte Carlo calculations using the SRIM-2013 software. From the evolution of the crystalline peaks in the Raman spectra obtained across the damaged area, one can conclude that the impinging ions do not accommodate as defects in the lattice but mostly displace the ions breaking the bonds and destroying the long range order. The spatial correlation model that takes into consideration the intensity variation at the laser spot and the anticipated from Monte Carlo calculations for the collision events can reproduce the trend of the strong transversal optical phonon width indicating nanocrystallites of a few nanometers size in the most damaged area. © 2019 John Wiley & Sons, Ltd.
T2  - Journal of Raman Spectroscopy
T1  - Raman mapping of 4‐MeV C and Si channeling implantation of 6H‐SiC
VL  - 50
IS  - 8
SP  - 1186
EP  - 1196
DO  - 10.1002/jrs.5629
ER  - 

@article{
author = "Flessa, Aikaterini and Ntemou, Eleni and Kokkoris, Michael and Liarokapis, Efthymios and Gloginjić, Marko and Petrović, Srđan M. and Erich, Marko and Fazinić, Stjepko and Karlušić, Marko and Tomić, Kristina",
year = "2019",
abstract = "A 6H-SiC single crystal implanted in channeling mode by 4-MeV C+3 and Si+3 ions at various doping levels has been examined by scanning electron microscopy (SEM) and micro-Raman spectroscopy in order to study the lattice distortions inflicted by the impinging ions. C ions create zones of strongly damaged regions, parallel to the front face of the wafer with width increasing with the amount of doping. As expected, Si has induced considerably more lattice distortions than C, and more than one order of magnitude less doping induces apparently the same effect as C. Despite the large laser spot size compared with the boundaries of the distorted regions, micro-Raman data provided results agreeing with the SEM pictures and the Monte Carlo calculations using the SRIM-2013 software. From the evolution of the crystalline peaks in the Raman spectra obtained across the damaged area, one can conclude that the impinging ions do not accommodate as defects in the lattice but mostly displace the ions breaking the bonds and destroying the long range order. The spatial correlation model that takes into consideration the intensity variation at the laser spot and the anticipated from Monte Carlo calculations for the collision events can reproduce the trend of the strong transversal optical phonon width indicating nanocrystallites of a few nanometers size in the most damaged area. © 2019 John Wiley & Sons, Ltd.",
journal = "Journal of Raman Spectroscopy",
title = "Raman mapping of 4‐MeV C and Si channeling implantation of 6H‐SiC",
volume = "50",
number = "8",
pages = "1186-1196",
doi = "10.1002/jrs.5629"
}

Flessa, A., Ntemou, E., Kokkoris, M., Liarokapis, E., Gloginjić, M., Petrović, S. M., Erich, M., Fazinić, S., Karlušić, M.,& Tomić, K.. (2019). Raman mapping of 4‐MeV C and Si channeling implantation of 6H‐SiC. in Journal of Raman Spectroscopy, 50(8), 1186-1196.
https://doi.org/10.1002/jrs.5629

Flessa A, Ntemou E, Kokkoris M, Liarokapis E, Gloginjić M, Petrović SM, Erich M, Fazinić S, Karlušić M, Tomić K. Raman mapping of 4‐MeV C and Si channeling implantation of 6H‐SiC. in Journal of Raman Spectroscopy. 2019;50(8):1186-1196.
doi:10.1002/jrs.5629 .

Flessa, Aikaterini, Ntemou, Eleni, Kokkoris, Michael, Liarokapis, Efthymios, Gloginjić, Marko, Petrović, Srđan M., Erich, Marko, Fazinić, Stjepko, Karlušić, Marko, Tomić, Kristina, "Raman mapping of 4‐MeV C and Si channeling implantation of 6H‐SiC" in Journal of Raman Spectroscopy, 50, no. 8 (2019):1186-1196,
https://doi.org/10.1002/jrs.5629 . .