TY  - CONF
AU  - Ilić, S.
AU  - Jevtić, A.
AU  - Stanković, Srboljub
AU  - Davidović, Vojkan S.
PY  - 2019
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/8657
AB  - In this paper we investigated the feasibility of using a commercial programmable floating-gate MOS transistor (EPAD) as a radiation dosimeter. The results show that EPAD with zero bias have the sensitivity of 9.2 mV/Gy and low fading. EPADs with a higher initial threshold voltage show very good linearity with the radiation dose. After its annealing at 70 °C there is a visible recovery of transfer characteristics due to a parasitic parallel resistive path that occurs during irradiation. Apart from that, the threshold voltage is slightly recovered. The programming time of an EPAD increases with the absorbed dose and depends on gate biasing during irradiation. © 2019 IEEE.
PB  - IEEE
C3  - 2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings
T1  - Feasibility of applying an electrically programmable floating-gate MOS transistor in radiation dosimetry
SP  - 67
EP  - 70
DO  - 10.1109/MIEL.2019.8889570
ER  - 

@conference{
author = "Ilić, S. and Jevtić, A. and Stanković, Srboljub and Davidović, Vojkan S.",
year = "2019",
abstract = "In this paper we investigated the feasibility of using a commercial programmable floating-gate MOS transistor (EPAD) as a radiation dosimeter. The results show that EPAD with zero bias have the sensitivity of 9.2 mV/Gy and low fading. EPADs with a higher initial threshold voltage show very good linearity with the radiation dose. After its annealing at 70 °C there is a visible recovery of transfer characteristics due to a parasitic parallel resistive path that occurs during irradiation. Apart from that, the threshold voltage is slightly recovered. The programming time of an EPAD increases with the absorbed dose and depends on gate biasing during irradiation. © 2019 IEEE.",
publisher = "IEEE",
journal = "2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings",
title = "Feasibility of applying an electrically programmable floating-gate MOS transistor in radiation dosimetry",
pages = "67-70",
doi = "10.1109/MIEL.2019.8889570"
}

Ilić, S., Jevtić, A., Stanković, S.,& Davidović, V. S.. (2019). Feasibility of applying an electrically programmable floating-gate MOS transistor in radiation dosimetry. in 2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings
IEEE., 67-70.
https://doi.org/10.1109/MIEL.2019.8889570

Ilić S, Jevtić A, Stanković S, Davidović VS. Feasibility of applying an electrically programmable floating-gate MOS transistor in radiation dosimetry. in 2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings. 2019;:67-70.
doi:10.1109/MIEL.2019.8889570 .

Ilić, S., Jevtić, A., Stanković, Srboljub, Davidović, Vojkan S., "Feasibility of applying an electrically programmable floating-gate MOS transistor in radiation dosimetry" in 2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings (2019):67-70,
https://doi.org/10.1109/MIEL.2019.8889570 . .

TY  - CONF
AU  - Stanković, Srboljub
AU  - Ilić, R.
AU  - Jakšić, A.
AU  - Nikolić, D.
AU  - Kržanović, Nikola
PY  - 2017
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/11955
AB  - In this study conducted numerical experiments aimed to determine the physical shielding factors (PSF) for two different MOSFET structures. The purpose of this paper was to present the new possibilities of the Monte Carlo numerical simulations for interaction of gamma irradiation of 60 Co and 137 Cs with semiconductor devices that are often located as dosimeters together with complex electronics power systems. The transport of incident photon particles is simulated with Monte Carlo code FOTELP-2014. When kovar is used as a lid in the gamma radiation field, the implemented calculations show that the PSF values for the ESAPMOS RADFET structure are significantly higher than the PSF values for the standard MOSFET structure.
PB  - IEEE
C3  - IEEE : 30th International Conference on Microelectronics (MIEL) : Proceedings book
T1  - Numerical Computation of the Physical Shielding Factor for DIfferent Structures of MOSFET in Gamma Irradiation Field
SP  - 175
EP  - 178
DO  - 10.1109/MIEL.2017.8190096
ER  - 

@conference{
author = "Stanković, Srboljub and Ilić, R. and Jakšić, A. and Nikolić, D. and Kržanović, Nikola",
year = "2017",
abstract = "In this study conducted numerical experiments aimed to determine the physical shielding factors (PSF) for two different MOSFET structures. The purpose of this paper was to present the new possibilities of the Monte Carlo numerical simulations for interaction of gamma irradiation of 60 Co and 137 Cs with semiconductor devices that are often located as dosimeters together with complex electronics power systems. The transport of incident photon particles is simulated with Monte Carlo code FOTELP-2014. When kovar is used as a lid in the gamma radiation field, the implemented calculations show that the PSF values for the ESAPMOS RADFET structure are significantly higher than the PSF values for the standard MOSFET structure.",
publisher = "IEEE",
journal = "IEEE : 30th International Conference on Microelectronics (MIEL) : Proceedings book",
title = "Numerical Computation of the Physical Shielding Factor for DIfferent Structures of MOSFET in Gamma Irradiation Field",
pages = "175-178",
doi = "10.1109/MIEL.2017.8190096"
}

Stanković, S., Ilić, R., Jakšić, A., Nikolić, D.,& Kržanović, N.. (2017). Numerical Computation of the Physical Shielding Factor for DIfferent Structures of MOSFET in Gamma Irradiation Field. in IEEE : 30th International Conference on Microelectronics (MIEL) : Proceedings book
IEEE., 175-178.
https://doi.org/10.1109/MIEL.2017.8190096

Stanković S, Ilić R, Jakšić A, Nikolić D, Kržanović N. Numerical Computation of the Physical Shielding Factor for DIfferent Structures of MOSFET in Gamma Irradiation Field. in IEEE : 30th International Conference on Microelectronics (MIEL) : Proceedings book. 2017;:175-178.
doi:10.1109/MIEL.2017.8190096 .

Stanković, Srboljub, Ilić, R., Jakšić, A., Nikolić, D., Kržanović, Nikola, "Numerical Computation of the Physical Shielding Factor for DIfferent Structures of MOSFET in Gamma Irradiation Field" in IEEE : 30th International Conference on Microelectronics (MIEL) : Proceedings book (2017):175-178,
https://doi.org/10.1109/MIEL.2017.8190096 . .

TY  - RPRT
AU  - Ilić, R.
AU  - Petrović, Ivan M.
PY  - 1997
UR  - http://inis.iaea.org/search/search.aspx?orig_q=RN:29026566
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/8606
T2  - 6. Workshop on heavy-charged particles in biology and medicine; Baveno (Italy)
T1  - SRNA: a Monte Carlo code for proton transport simulation
SP  - F71
EP  - F74
UR  - https://hdl.handle.net/21.15107/rcub_vinar_8606
ER  - 

@techreport{
author = "Ilić, R. and Petrović, Ivan M.",
year = "1997",
journal = "6. Workshop on heavy-charged particles in biology and medicine; Baveno (Italy)",
title = "SRNA: a Monte Carlo code for proton transport simulation",
pages = "F71-F74",
url = "https://hdl.handle.net/21.15107/rcub_vinar_8606"
}

Ilić, R.,& Petrović, I. M.. (1997). SRNA: a Monte Carlo code for proton transport simulation. in 6. Workshop on heavy-charged particles in biology and medicine; Baveno (Italy), F71-F74.
https://hdl.handle.net/21.15107/rcub_vinar_8606

Ilić R, Petrović IM. SRNA: a Monte Carlo code for proton transport simulation. in 6. Workshop on heavy-charged particles in biology and medicine; Baveno (Italy). 1997;:F71-F74.
https://hdl.handle.net/21.15107/rcub_vinar_8606 .

Ilić, R., Petrović, Ivan M., "SRNA: a Monte Carlo code for proton transport simulation" in 6. Workshop on heavy-charged particles in biology and medicine; Baveno (Italy) (1997):F71-F74,
https://hdl.handle.net/21.15107/rcub_vinar_8606 .