Djorić-Veljković, Snežana

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  • Djorić-Veljković, Snežana (1)
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Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress

Veljković, Sandra; Mitrović, Nikola; Davidović, Vojkan; Golubović, Snežana; Djorić-Veljković, Snežana; Paskaleva, Albena; Spassov, Dencho; Stanković, Srboljub; Andjelković, Marko; Prijić, Zoran; Manić, Ivica; Prijić, Aneta; Ristić, Goran; Danković, Danijel

(2022)

TY  - JOUR
AU  - Veljković, Sandra
AU  - Mitrović, Nikola
AU  - Davidović, Vojkan
AU  - Golubović, Snežana
AU  - Djorić-Veljković, Snežana
AU  - Paskaleva, Albena
AU  - Spassov, Dencho
AU  - Stanković, Srboljub
AU  - Andjelković, Marko
AU  - Prijić, Zoran
AU  - Manić, Ivica
AU  - Prijić, Aneta
AU  - Ristić, Goran
AU  - Danković, Danijel
PY  - 2022
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12130
AB  - n this paper, the e®ects of successively applied static/pulsed negative bias temperature (NBT)stress and irradiation on commercial p-channel power vertical double-di®used metal-oxidesemiconductor (VDMOS) transistors are investigated. To further illustrate the impacts of thesestresses on the power devices, the relative contributions of gate oxide charge (Not) and interfacetraps (Nit) to threshold voltage shifts are shown and studied. It was shown that when irradi-ation without gate voltage is used, the duration of the pre-irradiation static NBT stress has aslightly larger e®ect on the radiation response of power VDMOS transistors. Regarding the factthat the investigated components are more likely to function in the dynamic mode than thestatic mode in practice, additional analysis was focused on the results obtained during thepulsed NBT stress after irradiation. For the components subjected to the pulsed NBT stressafter the irradiation, the e®ects ofNotneutralization andNitpassivation (usually related toannealing) are more enhanced than the components subjected to the static NBT stress, becauseonly a high temperature is applied during the pulse-o® state. It was observed that in devicespreviously irradiated with gate voltage applied, the decrease of threshold voltage shift is sig-ni ̄cantly greater during the pulsed NBT stress than during the static NBT stress
T2  - Journal of Circuits, Systems and Computers
T1  - Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress
VL  - 31
IS  - 18
SP  - 2240003
DO  - 10.1142/S0218126622400035
ER  - 
@article{
author = "Veljković, Sandra and Mitrović, Nikola and Davidović, Vojkan and Golubović, Snežana and Djorić-Veljković, Snežana and Paskaleva, Albena and Spassov, Dencho and Stanković, Srboljub and Andjelković, Marko and Prijić, Zoran and Manić, Ivica and Prijić, Aneta and Ristić, Goran and Danković, Danijel",
year = "2022",
abstract = "n this paper, the e®ects of successively applied static/pulsed negative bias temperature (NBT)stress and irradiation on commercial p-channel power vertical double-di®used metal-oxidesemiconductor (VDMOS) transistors are investigated. To further illustrate the impacts of thesestresses on the power devices, the relative contributions of gate oxide charge (Not) and interfacetraps (Nit) to threshold voltage shifts are shown and studied. It was shown that when irradi-ation without gate voltage is used, the duration of the pre-irradiation static NBT stress has aslightly larger e®ect on the radiation response of power VDMOS transistors. Regarding the factthat the investigated components are more likely to function in the dynamic mode than thestatic mode in practice, additional analysis was focused on the results obtained during thepulsed NBT stress after irradiation. For the components subjected to the pulsed NBT stressafter the irradiation, the e®ects ofNotneutralization andNitpassivation (usually related toannealing) are more enhanced than the components subjected to the static NBT stress, becauseonly a high temperature is applied during the pulse-o® state. It was observed that in devicespreviously irradiated with gate voltage applied, the decrease of threshold voltage shift is sig-ni ̄cantly greater during the pulsed NBT stress than during the static NBT stress",
journal = "Journal of Circuits, Systems and Computers",
title = "Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress",
volume = "31",
number = "18",
pages = "2240003",
doi = "10.1142/S0218126622400035"
}
Veljković, S., Mitrović, N., Davidović, V., Golubović, S., Djorić-Veljković, S., Paskaleva, A., Spassov, D., Stanković, S., Andjelković, M., Prijić, Z., Manić, I., Prijić, A., Ristić, G.,& Danković, D.. (2022). Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress. in Journal of Circuits, Systems and Computers, 31(18), 2240003.
https://doi.org/10.1142/S0218126622400035
Veljković S, Mitrović N, Davidović V, Golubović S, Djorić-Veljković S, Paskaleva A, Spassov D, Stanković S, Andjelković M, Prijić Z, Manić I, Prijić A, Ristić G, Danković D. Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress. in Journal of Circuits, Systems and Computers. 2022;31(18):2240003.
doi:10.1142/S0218126622400035 .
Veljković, Sandra, Mitrović, Nikola, Davidović, Vojkan, Golubović, Snežana, Djorić-Veljković, Snežana, Paskaleva, Albena, Spassov, Dencho, Stanković, Srboljub, Andjelković, Marko, Prijić, Zoran, Manić, Ivica, Prijić, Aneta, Ristić, Goran, Danković, Danijel, "Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress" in Journal of Circuits, Systems and Computers, 31, no. 18 (2022):2240003,
https://doi.org/10.1142/S0218126622400035 . .
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