Ilić, Gvozden

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  • Ilić, Gvozden (2)
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Author's Bibliography

Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation

Pejović, Milić M.; Ciraj-Bjelac, Olivera; Kovačević, Milojko; Rajović, Zoran; Ilić, Gvozden

(2013)

TY  - JOUR
AU  - Pejović, Milić M.
AU  - Ciraj-Bjelac, Olivera
AU  - Kovačević, Milojko
AU  - Rajović, Zoran
AU  - Ilić, Gvozden
PY  - 2013
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5602
AB  - Investigation of Al-gate p-channel MOSFETs sensitivity following irradiation using 200 and 280 kV X-ray beams as well as gamma-ray irradiation of Co-60 in the dose range from 1 to 5 Gy was performed in this paper. The response followed on the basis of threshold voltage shift and was studied as a function of absorbed dose. It was shown that the most significant change in threshold voltage was in the case of MOSFET irradiation in X-ray fields of 200 kV and when the gate voltage was +5V. For practical applications in dosimetry, the sensitivity of the investigated MOSFETs was also satisfactory for X-ray tube voltage of 280 kV and for gamma rays. Possible processes in gate oxide caused by radiation and its impact on the response of MOSFETs were also analyzed in this paper.
T2  - International Journal of Photoenergy
T1  - Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation
DO  - 10.1155/2013/158403
ER  - 
@article{
author = "Pejović, Milić M. and Ciraj-Bjelac, Olivera and Kovačević, Milojko and Rajović, Zoran and Ilić, Gvozden",
year = "2013",
abstract = "Investigation of Al-gate p-channel MOSFETs sensitivity following irradiation using 200 and 280 kV X-ray beams as well as gamma-ray irradiation of Co-60 in the dose range from 1 to 5 Gy was performed in this paper. The response followed on the basis of threshold voltage shift and was studied as a function of absorbed dose. It was shown that the most significant change in threshold voltage was in the case of MOSFET irradiation in X-ray fields of 200 kV and when the gate voltage was +5V. For practical applications in dosimetry, the sensitivity of the investigated MOSFETs was also satisfactory for X-ray tube voltage of 280 kV and for gamma rays. Possible processes in gate oxide caused by radiation and its impact on the response of MOSFETs were also analyzed in this paper.",
journal = "International Journal of Photoenergy",
title = "Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation",
doi = "10.1155/2013/158403"
}
Pejović, M. M., Ciraj-Bjelac, O., Kovačević, M., Rajović, Z.,& Ilić, G.. (2013). Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation. in International Journal of Photoenergy.
https://doi.org/10.1155/2013/158403
Pejović MM, Ciraj-Bjelac O, Kovačević M, Rajović Z, Ilić G. Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation. in International Journal of Photoenergy. 2013;.
doi:10.1155/2013/158403 .
Pejović, Milić M., Ciraj-Bjelac, Olivera, Kovačević, Milojko, Rajović, Zoran, Ilić, Gvozden, "Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation" in International Journal of Photoenergy (2013),
https://doi.org/10.1155/2013/158403 . .
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Determination of Pulse Tolerable Voltage in Gas-Insulated Systems

Osmokrović, Predrag V.; Ilić, Gvozden; Dolicanin, Cemal; Stanković, Koviljka; Vujisić, Miloš Lj.

(2008)

TY  - JOUR
AU  - Osmokrović, Predrag V.
AU  - Ilić, Gvozden
AU  - Dolicanin, Cemal
AU  - Stanković, Koviljka
AU  - Vujisić, Miloš Lj.
PY  - 2008
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/3608
AB  - In this paper we expound on the procedure of determining the pulse tolerable voltage characteristic in the voltage-versus-time frame, by applying the time enlargement law to the breakdown time random variable, and using a single statistical sample for this variable, obtained through experiments with a predefined shape of the voltage load. The suggested algorithm has been experimentally tested for Ar, N(2), and SF(6) gases, in the pat product (pressure x interelectrode gap) range from 10(-4) to 300 bar mm. The testing was performed by comparing the pulse tolerable voltage characteristic of a two-electrode configuration obtained by applying a particular shape of the pulse voltage load with the values corresponding to other pulse voltage shapes, covering a wide range of frequencies. Satisfactory results have been obtained concerning the applicability of the procedure, with certain minor limitations, which are pointed out. [DOI: 10.1143/JJAP.47.8928]
T2  - Japanese Journal of Applied Physics
T1  - Determination of Pulse Tolerable Voltage in Gas-Insulated Systems
VL  - 47
IS  - 12
SP  - 8928
EP  - 8934
DO  - 10.1143/JJAP.47.8928
ER  - 
@article{
author = "Osmokrović, Predrag V. and Ilić, Gvozden and Dolicanin, Cemal and Stanković, Koviljka and Vujisić, Miloš Lj.",
year = "2008",
abstract = "In this paper we expound on the procedure of determining the pulse tolerable voltage characteristic in the voltage-versus-time frame, by applying the time enlargement law to the breakdown time random variable, and using a single statistical sample for this variable, obtained through experiments with a predefined shape of the voltage load. The suggested algorithm has been experimentally tested for Ar, N(2), and SF(6) gases, in the pat product (pressure x interelectrode gap) range from 10(-4) to 300 bar mm. The testing was performed by comparing the pulse tolerable voltage characteristic of a two-electrode configuration obtained by applying a particular shape of the pulse voltage load with the values corresponding to other pulse voltage shapes, covering a wide range of frequencies. Satisfactory results have been obtained concerning the applicability of the procedure, with certain minor limitations, which are pointed out. [DOI: 10.1143/JJAP.47.8928]",
journal = "Japanese Journal of Applied Physics",
title = "Determination of Pulse Tolerable Voltage in Gas-Insulated Systems",
volume = "47",
number = "12",
pages = "8928-8934",
doi = "10.1143/JJAP.47.8928"
}
Osmokrović, P. V., Ilić, G., Dolicanin, C., Stanković, K.,& Vujisić, M. Lj.. (2008). Determination of Pulse Tolerable Voltage in Gas-Insulated Systems. in Japanese Journal of Applied Physics, 47(12), 8928-8934.
https://doi.org/10.1143/JJAP.47.8928
Osmokrović PV, Ilić G, Dolicanin C, Stanković K, Vujisić ML. Determination of Pulse Tolerable Voltage in Gas-Insulated Systems. in Japanese Journal of Applied Physics. 2008;47(12):8928-8934.
doi:10.1143/JJAP.47.8928 .
Osmokrović, Predrag V., Ilić, Gvozden, Dolicanin, Cemal, Stanković, Koviljka, Vujisić, Miloš Lj., "Determination of Pulse Tolerable Voltage in Gas-Insulated Systems" in Japanese Journal of Applied Physics, 47, no. 12 (2008):8928-8934,
https://doi.org/10.1143/JJAP.47.8928 . .
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