TY  - JOUR
AU  - Ristić, Goran S.
AU  - Ilić, Stefan
AU  - Veljković, Sandra
AU  - Jevtić, Aleksandar S.
AU  - Dimitrijević, Strahinja
AU  - Palma, Alberto J.
AU  - Stanković, Srboljub
AU  - Anđelković, Marko S.
PY  - 2022
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/10240
AB  - The possibility of using commercial p-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) as X-ray sensors is investigated in this case study. In this aspect, the dependence of sensitivity on both the gate voltage and the mean energy for three X-ray beams is examined. The eight gate voltages from 0 to 21 V are applied, and the dependence of the sensitivity on the gate voltage is well fitted using the proposed equation. Regarding X-ray energy, the sensitivity first increases and then decreases as a consequence of the behavior of the mass energy-absorption coefficients and is the largest for RQR8 beam. As the mass energy-absorption coefficients of SiO2 are not found in the literature, the mass energy-absorption coefficients of silicon are used. The behavior of irradiated transistors during annealing at room temperature without gate polarization is also considered.
T2  - Electronics
T1  - Commercial P-Channel Power VDMOSFET as X-ray Dosimeter
VL  - 11
IS  - 6
SP  - 918
DO  - 10.3390/electronics11060918
ER  - 

@article{
author = "Ristić, Goran S. and Ilić, Stefan and Veljković, Sandra and Jevtić, Aleksandar S. and Dimitrijević, Strahinja and Palma, Alberto J. and Stanković, Srboljub and Anđelković, Marko S.",
year = "2022",
abstract = "The possibility of using commercial p-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) as X-ray sensors is investigated in this case study. In this aspect, the dependence of sensitivity on both the gate voltage and the mean energy for three X-ray beams is examined. The eight gate voltages from 0 to 21 V are applied, and the dependence of the sensitivity on the gate voltage is well fitted using the proposed equation. Regarding X-ray energy, the sensitivity first increases and then decreases as a consequence of the behavior of the mass energy-absorption coefficients and is the largest for RQR8 beam. As the mass energy-absorption coefficients of SiO2 are not found in the literature, the mass energy-absorption coefficients of silicon are used. The behavior of irradiated transistors during annealing at room temperature without gate polarization is also considered.",
journal = "Electronics",
title = "Commercial P-Channel Power VDMOSFET as X-ray Dosimeter",
volume = "11",
number = "6",
pages = "918",
doi = "10.3390/electronics11060918"
}

Ristić, G. S., Ilić, S., Veljković, S., Jevtić, A. S., Dimitrijević, S., Palma, A. J., Stanković, S.,& Anđelković, M. S.. (2022). Commercial P-Channel Power VDMOSFET as X-ray Dosimeter. in Electronics, 11(6), 918.
https://doi.org/10.3390/electronics11060918

Ristić GS, Ilić S, Veljković S, Jevtić AS, Dimitrijević S, Palma AJ, Stanković S, Anđelković MS. Commercial P-Channel Power VDMOSFET as X-ray Dosimeter. in Electronics. 2022;11(6):918.
doi:10.3390/electronics11060918 .

Ristić, Goran S., Ilić, Stefan, Veljković, Sandra, Jevtić, Aleksandar S., Dimitrijević, Strahinja, Palma, Alberto J., Stanković, Srboljub, Anđelković, Marko S., "Commercial P-Channel Power VDMOSFET as X-ray Dosimeter" in Electronics, 11, no. 6 (2022):918,
https://doi.org/10.3390/electronics11060918 . .

TY  - CONF
AU  - Ristić, Goran S.
AU  - Jevtić, Aleksandar S.
AU  - Ilić, Stefan
AU  - Dimitrijević, Saša
AU  - Veljković, Stanislav
AU  - Palma, Alberto J.
AU  - Stanković, Srboljub
AU  - Anđelković, Marko S.
PY  - 2021
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/10021
AB  - The effect of X-rays on the p-channel power vertical double diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) was investigated. The VDMOSFETs were irradiated without gate polarization using three different Xray beams. Due to the polyenergetic nature of X-rays, their effect is much more complex than the effect of gamma radiation on transistors. The influence of X-rays on threshold voltage shift $(\Delta V_T)$ and on the creation of fixed traps (FTs) in gate oxide and on switching traps (STs) near and at oxide/semiconductor interface was analyzed. The effect of STs on T is more significant than in the case of y-radiation. The obtained results showed that the sensitivity to radiation depends on the radiation energy, and they are in accordance with the theoretical predictions.
C3  - 2021 IEEE 32nd International Conference on Microelectronics (MIEL)
T1  - Sensitivity of Unbiased Commercial P-channel Power VDMOSFETs to X-ray Radiation
SP  - 341
EP  - 344
DO  - 10.1109/MIEL52794.2021.9569096
ER  - 

@conference{
author = "Ristić, Goran S. and Jevtić, Aleksandar S. and Ilić, Stefan and Dimitrijević, Saša and Veljković, Stanislav and Palma, Alberto J. and Stanković, Srboljub and Anđelković, Marko S.",
year = "2021",
abstract = "The effect of X-rays on the p-channel power vertical double diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) was investigated. The VDMOSFETs were irradiated without gate polarization using three different Xray beams. Due to the polyenergetic nature of X-rays, their effect is much more complex than the effect of gamma radiation on transistors. The influence of X-rays on threshold voltage shift $(\Delta V_T)$ and on the creation of fixed traps (FTs) in gate oxide and on switching traps (STs) near and at oxide/semiconductor interface was analyzed. The effect of STs on T is more significant than in the case of y-radiation. The obtained results showed that the sensitivity to radiation depends on the radiation energy, and they are in accordance with the theoretical predictions.",
journal = "2021 IEEE 32nd International Conference on Microelectronics (MIEL)",
title = "Sensitivity of Unbiased Commercial P-channel Power VDMOSFETs to X-ray Radiation",
pages = "341-344",
doi = "10.1109/MIEL52794.2021.9569096"
}

Ristić, G. S., Jevtić, A. S., Ilić, S., Dimitrijević, S., Veljković, S., Palma, A. J., Stanković, S.,& Anđelković, M. S.. (2021). Sensitivity of Unbiased Commercial P-channel Power VDMOSFETs to X-ray Radiation. in 2021 IEEE 32nd International Conference on Microelectronics (MIEL), 341-344.
https://doi.org/10.1109/MIEL52794.2021.9569096

Ristić GS, Jevtić AS, Ilić S, Dimitrijević S, Veljković S, Palma AJ, Stanković S, Anđelković MS. Sensitivity of Unbiased Commercial P-channel Power VDMOSFETs to X-ray Radiation. in 2021 IEEE 32nd International Conference on Microelectronics (MIEL). 2021;:341-344.
doi:10.1109/MIEL52794.2021.9569096 .

Ristić, Goran S., Jevtić, Aleksandar S., Ilić, Stefan, Dimitrijević, Saša, Veljković, Stanislav, Palma, Alberto J., Stanković, Srboljub, Anđelković, Marko S., "Sensitivity of Unbiased Commercial P-channel Power VDMOSFETs to X-ray Radiation" in 2021 IEEE 32nd International Conference on Microelectronics (MIEL) (2021):341-344,
https://doi.org/10.1109/MIEL52794.2021.9569096 . .