TY  - JOUR
AU  - Antić, Željka
AU  - Prashanthi, Kovur
AU  - Jovanović, Dragana J.
AU  - Thundat, Thomas
AU  - Dramićanin, Miroslav
PY  - 2019
UR  - http://link.springer.com/10.1007/s00339-019-2703-9
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/8205
AB  - This report focuses on fabrication, characterization, and fundamental optical properties of Eu 3+ - and Sm 3+ -doped GdVO 4 luminescent thin films. Films were uniformly grown on three different substrates: single crystal sapphire (0001), thermally grown silicon oxide (Si/SiO 2 ~ 500 nm) on silicon and fused quartz using pulsed laser deposition technique. Thin films’ structure, morphology, and photoluminescent properties were investigated by X-ray diffraction, atomic force and scanning electron microscopy, diffuse reflectance and photoluminescence spectroscopy. Thin films’ structure characterized by X-ray diffraction showed that for all substrates highly crystalline, zircon-type pure phase films were formed. Films’ thickness and internal morphology were determined by cross-sectional scanning electron microscopy showing completely dense, pore-free film with an average thickness of ~ 390 nm. Atomic force microscopy revealed that the average crystallite size of both Eu 3+ - and Sm 3+ -doped GdVO 4 thin films deposited on fused quartz is higher as compared to the single crystal sapphire (0001) and thermally grown silicon oxide (Si/SiO 2 ~ 500 nm) and that the surface roughness increases with the increase in the grain size. Energy band gap values, estimated from diffuse reflectance spectra were 3.57 and 3.53 eV for Eu 3+ - and Sm 3+ -doped GdVO 4 thin films, respectively. Photoluminescent properties were investigated in detail in both steady state and lifetime domain. The emission spectra show clear orange–red emission in the Sm 3+ -doped GdVO 4 thin films and red emission in Eu 3+ -doped ones. © 2019, Springer-Verlag GmbH Germany, part of Springer Nature.
T2  - Applied Physics. A: Materials Science and Processing
T1  - Structure, morphology, and luminescent behavior of RE3+-doped GdVO4 thin films
VL  - 125
IS  - 6
SP  - 410
DO  - 10.1007/s00339-019-2703-9
ER  - 

@article{
author = "Antić, Željka and Prashanthi, Kovur and Jovanović, Dragana J. and Thundat, Thomas and Dramićanin, Miroslav",
year = "2019",
abstract = "This report focuses on fabrication, characterization, and fundamental optical properties of Eu 3+ - and Sm 3+ -doped GdVO 4 luminescent thin films. Films were uniformly grown on three different substrates: single crystal sapphire (0001), thermally grown silicon oxide (Si/SiO 2 ~ 500 nm) on silicon and fused quartz using pulsed laser deposition technique. Thin films’ structure, morphology, and photoluminescent properties were investigated by X-ray diffraction, atomic force and scanning electron microscopy, diffuse reflectance and photoluminescence spectroscopy. Thin films’ structure characterized by X-ray diffraction showed that for all substrates highly crystalline, zircon-type pure phase films were formed. Films’ thickness and internal morphology were determined by cross-sectional scanning electron microscopy showing completely dense, pore-free film with an average thickness of ~ 390 nm. Atomic force microscopy revealed that the average crystallite size of both Eu 3+ - and Sm 3+ -doped GdVO 4 thin films deposited on fused quartz is higher as compared to the single crystal sapphire (0001) and thermally grown silicon oxide (Si/SiO 2 ~ 500 nm) and that the surface roughness increases with the increase in the grain size. Energy band gap values, estimated from diffuse reflectance spectra were 3.57 and 3.53 eV for Eu 3+ - and Sm 3+ -doped GdVO 4 thin films, respectively. Photoluminescent properties were investigated in detail in both steady state and lifetime domain. The emission spectra show clear orange–red emission in the Sm 3+ -doped GdVO 4 thin films and red emission in Eu 3+ -doped ones. © 2019, Springer-Verlag GmbH Germany, part of Springer Nature.",
journal = "Applied Physics. A: Materials Science and Processing",
title = "Structure, morphology, and luminescent behavior of RE3+-doped GdVO4 thin films",
volume = "125",
number = "6",
pages = "410",
doi = "10.1007/s00339-019-2703-9"
}

Antić, Ž., Prashanthi, K., Jovanović, D. J., Thundat, T.,& Dramićanin, M.. (2019). Structure, morphology, and luminescent behavior of RE3+-doped GdVO4 thin films. in Applied Physics. A: Materials Science and Processing, 125(6), 410.
https://doi.org/10.1007/s00339-019-2703-9

Antić Ž, Prashanthi K, Jovanović DJ, Thundat T, Dramićanin M. Structure, morphology, and luminescent behavior of RE3+-doped GdVO4 thin films. in Applied Physics. A: Materials Science and Processing. 2019;125(6):410.
doi:10.1007/s00339-019-2703-9 .

Antić, Željka, Prashanthi, Kovur, Jovanović, Dragana J., Thundat, Thomas, Dramićanin, Miroslav, "Structure, morphology, and luminescent behavior of RE3+-doped GdVO4 thin films" in Applied Physics. A: Materials Science and Processing, 125, no. 6 (2019):410,
https://doi.org/10.1007/s00339-019-2703-9 . .

TY  - JOUR
AU  - Đokić, Stojan
AU  - Antić, Željka
AU  - Đokić, Nada
AU  - Thundat, Thomas
PY  - 2019
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/8680
AB  - The deposition of Fe–Ni alloys from acidic and alkaline solutions, using hypophosphite as a reducing agent, is studied in this work. The experimental results confirm the autocatalytic nature of this process. The composition of alloys is practically independent of the temperature deposition. Fe–Ni alloys produced from acidic solutions contained less than 1% Fe. The amount of Fe in Fe–Ni alloys produced from alkaline solutions was estimated to be about 15 %. The deposition of Fe–Ni alloys was significantly faster in the alkaline than in the acidic solutions, due to more pronounced hydrolysis of Fe(II) and Ni(II) ions under the alkaline conditions. The Fe–Ni alloys produced from both acidic and alkaline solutions contain phosphorus and as such have amorphous structure. © 2019 Serbian Chemical Society. All rights reserved.
T2  - Journal of the Serbian Chemical Society
T1  - Electroless deposition of Fe-Ni alloys from acidic and alkaline solutions using hypophosphite as a reducing agent
VL  - 84
IS  - 11
SP  - 1199
EP  - 1208
DO  - 10.2298/JSC190525069D
ER  - 

@article{
author = "Đokić, Stojan and Antić, Željka and Đokić, Nada and Thundat, Thomas",
year = "2019",
abstract = "The deposition of Fe–Ni alloys from acidic and alkaline solutions, using hypophosphite as a reducing agent, is studied in this work. The experimental results confirm the autocatalytic nature of this process. The composition of alloys is practically independent of the temperature deposition. Fe–Ni alloys produced from acidic solutions contained less than 1% Fe. The amount of Fe in Fe–Ni alloys produced from alkaline solutions was estimated to be about 15 %. The deposition of Fe–Ni alloys was significantly faster in the alkaline than in the acidic solutions, due to more pronounced hydrolysis of Fe(II) and Ni(II) ions under the alkaline conditions. The Fe–Ni alloys produced from both acidic and alkaline solutions contain phosphorus and as such have amorphous structure. © 2019 Serbian Chemical Society. All rights reserved.",
journal = "Journal of the Serbian Chemical Society",
title = "Electroless deposition of Fe-Ni alloys from acidic and alkaline solutions using hypophosphite as a reducing agent",
volume = "84",
number = "11",
pages = "1199-1208",
doi = "10.2298/JSC190525069D"
}

Đokić, S., Antić, Ž., Đokić, N.,& Thundat, T.. (2019). Electroless deposition of Fe-Ni alloys from acidic and alkaline solutions using hypophosphite as a reducing agent. in Journal of the Serbian Chemical Society, 84(11), 1199-1208.
https://doi.org/10.2298/JSC190525069D

Đokić S, Antić Ž, Đokić N, Thundat T. Electroless deposition of Fe-Ni alloys from acidic and alkaline solutions using hypophosphite as a reducing agent. in Journal of the Serbian Chemical Society. 2019;84(11):1199-1208.
doi:10.2298/JSC190525069D .

Đokić, Stojan, Antić, Željka, Đokić, Nada, Thundat, Thomas, "Electroless deposition of Fe-Ni alloys from acidic and alkaline solutions using hypophosphite as a reducing agent" in Journal of the Serbian Chemical Society, 84, no. 11 (2019):1199-1208,
https://doi.org/10.2298/JSC190525069D . .

TY  - JOUR
AU  - Prashanthi, Kovur
AU  - Antić, Željka
AU  - Thakur, Garima
AU  - Dramićanin, Miroslav
AU  - Thundat, Thomas
PY  - 2018
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/1912
AB  - Wide-bandgap semiconductor nanowires with surface defect emission centers have the potential to be used as sensitive thermometers and optical probes. Here, we show that the green luminescence of multiferroic BiFeO3 (BFO) nanowires shows an anomalous negative thermal quenching (NTQ) with increasing temperatures. The release of trapped carriers from localized surface defect states is suggested as the possible mechanism for the increased green luminescence which was experimentally observed at elevated temperatures. A reasonable interpretation of the photoluminescence (PL) processes in BFO nanowires is achieved, and the activation energies of the PL quenching and thermal hopping are deduced. Negative thermal quenching of BFO nanowires provides a new strategy for optical thermometry at higher temperatures.
T2  - Physica Status Solidi - Rapid Research Letters
T1  - Surface State-Induced Anomalous Negative Thermal Quenching of Multiferroic BiFeO3 Nanowires
VL  - 12
IS  - 1
DO  - 10.1002/pssr.201700352
ER  - 

@article{
author = "Prashanthi, Kovur and Antić, Željka and Thakur, Garima and Dramićanin, Miroslav and Thundat, Thomas",
year = "2018",
abstract = "Wide-bandgap semiconductor nanowires with surface defect emission centers have the potential to be used as sensitive thermometers and optical probes. Here, we show that the green luminescence of multiferroic BiFeO3 (BFO) nanowires shows an anomalous negative thermal quenching (NTQ) with increasing temperatures. The release of trapped carriers from localized surface defect states is suggested as the possible mechanism for the increased green luminescence which was experimentally observed at elevated temperatures. A reasonable interpretation of the photoluminescence (PL) processes in BFO nanowires is achieved, and the activation energies of the PL quenching and thermal hopping are deduced. Negative thermal quenching of BFO nanowires provides a new strategy for optical thermometry at higher temperatures.",
journal = "Physica Status Solidi - Rapid Research Letters",
title = "Surface State-Induced Anomalous Negative Thermal Quenching of Multiferroic BiFeO3 Nanowires",
volume = "12",
number = "1",
doi = "10.1002/pssr.201700352"
}

Prashanthi, K., Antić, Ž., Thakur, G., Dramićanin, M.,& Thundat, T.. (2018). Surface State-Induced Anomalous Negative Thermal Quenching of Multiferroic BiFeO3 Nanowires. in Physica Status Solidi - Rapid Research Letters, 12(1).
https://doi.org/10.1002/pssr.201700352

Prashanthi K, Antić Ž, Thakur G, Dramićanin M, Thundat T. Surface State-Induced Anomalous Negative Thermal Quenching of Multiferroic BiFeO3 Nanowires. in Physica Status Solidi - Rapid Research Letters. 2018;12(1).
doi:10.1002/pssr.201700352 .

Prashanthi, Kovur, Antić, Željka, Thakur, Garima, Dramićanin, Miroslav, Thundat, Thomas, "Surface State-Induced Anomalous Negative Thermal Quenching of Multiferroic BiFeO3 Nanowires" in Physica Status Solidi - Rapid Research Letters, 12, no. 1 (2018),
https://doi.org/10.1002/pssr.201700352 . .

TY  - JOUR
AU  - Goswami, Ankur
AU  - Dhandaria, Priyesh
AU  - Pal, Soupitak
AU  - McGee, Ryan
AU  - Khan, Faheem
AU  - Antić, Željka
AU  - Gaikwad, Ravi
AU  - Prashanthi, Kovur
AU  - Thundat, Thomas
PY  - 2017
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/11870
AB  - This study reports on the mid-infrared (mid-IR) photothermal response of multilayer MoS2 thin films grown on crystalline (p-type silicon and c-axis-oriented single crystal sapphire) and amorphous (Si/SiO2 and Si/SiN) substrates by pulsed laser deposition (PLD). The photothermal response of the MoS2 films is measured as the changes in the resistance of the MoS2 films when irradiated with a mid-IR (7 to 8.2 μm) source. We show that enhancing the temperature coefficient of resistance (TCR) of the MoS2 thin films is possible by controlling the film-substrate interface through a proper choice of substrate and growth conditions. The thin films grown by PLD are characterized using X-ray diffraction, Raman, atomic force microscopy, X-ray photoelectron microscopy, and transmission electron microscopy. The high-resolution transmission electron microscopy (HRTEM) images show that the MoS2 films grow on sapphire substrates in a layer-by-layer manner with misfit dislocations. The layer growth morphology is disrupted when the films are grown on substrates with a diamond cubic structure (e.g., silicon) because of twin growth formation. The growth morphology on amorphous substrates, such as Si/SiO2 or Si/SiN, is very different. The PLD-grown MoS2 films on silicon show higher TCR (−2.9% K−1 at 296 K), higher mid-IR sensitivity (ΔR/R = 5.2%), and higher responsivity (8.7 V·W–1) compared to both the PLD-grown films on other substrates and the mechanically exfoliated MoS2 flakes transferred to different substrates.
T2  - Nano Research
T1  - Effect of interface on mid-infrared photothermal response of MoS2 thin film grown by pulsed laser deposition
VL  - 10
IS  - 10
SP  - 3571
EP  - 3584
DO  - 10.1007/s12274-017-1568-5
ER  - 

@article{
author = "Goswami, Ankur and Dhandaria, Priyesh and Pal, Soupitak and McGee, Ryan and Khan, Faheem and Antić, Željka and Gaikwad, Ravi and Prashanthi, Kovur and Thundat, Thomas",
year = "2017",
abstract = "This study reports on the mid-infrared (mid-IR) photothermal response of multilayer MoS2 thin films grown on crystalline (p-type silicon and c-axis-oriented single crystal sapphire) and amorphous (Si/SiO2 and Si/SiN) substrates by pulsed laser deposition (PLD). The photothermal response of the MoS2 films is measured as the changes in the resistance of the MoS2 films when irradiated with a mid-IR (7 to 8.2 μm) source. We show that enhancing the temperature coefficient of resistance (TCR) of the MoS2 thin films is possible by controlling the film-substrate interface through a proper choice of substrate and growth conditions. The thin films grown by PLD are characterized using X-ray diffraction, Raman, atomic force microscopy, X-ray photoelectron microscopy, and transmission electron microscopy. The high-resolution transmission electron microscopy (HRTEM) images show that the MoS2 films grow on sapphire substrates in a layer-by-layer manner with misfit dislocations. The layer growth morphology is disrupted when the films are grown on substrates with a diamond cubic structure (e.g., silicon) because of twin growth formation. The growth morphology on amorphous substrates, such as Si/SiO2 or Si/SiN, is very different. The PLD-grown MoS2 films on silicon show higher TCR (−2.9% K−1 at 296 K), higher mid-IR sensitivity (ΔR/R = 5.2%), and higher responsivity (8.7 V·W–1) compared to both the PLD-grown films on other substrates and the mechanically exfoliated MoS2 flakes transferred to different substrates.",
journal = "Nano Research",
title = "Effect of interface on mid-infrared photothermal response of MoS2 thin film grown by pulsed laser deposition",
volume = "10",
number = "10",
pages = "3571-3584",
doi = "10.1007/s12274-017-1568-5"
}

Goswami, A., Dhandaria, P., Pal, S., McGee, R., Khan, F., Antić, Ž., Gaikwad, R., Prashanthi, K.,& Thundat, T.. (2017). Effect of interface on mid-infrared photothermal response of MoS2 thin film grown by pulsed laser deposition. in Nano Research, 10(10), 3571-3584.
https://doi.org/10.1007/s12274-017-1568-5

Goswami A, Dhandaria P, Pal S, McGee R, Khan F, Antić Ž, Gaikwad R, Prashanthi K, Thundat T. Effect of interface on mid-infrared photothermal response of MoS2 thin film grown by pulsed laser deposition. in Nano Research. 2017;10(10):3571-3584.
doi:10.1007/s12274-017-1568-5 .

Goswami, Ankur, Dhandaria, Priyesh, Pal, Soupitak, McGee, Ryan, Khan, Faheem, Antić, Željka, Gaikwad, Ravi, Prashanthi, Kovur, Thundat, Thomas, "Effect of interface on mid-infrared photothermal response of MoS2 thin film grown by pulsed laser deposition" in Nano Research, 10, no. 10 (2017):3571-3584,
https://doi.org/10.1007/s12274-017-1568-5 . .

TY  - JOUR
AU  - Antić, Željka
AU  - Kuzman, Sanja
AU  - Đorđević, Vesna R.
AU  - Dramićanin, Miroslav
AU  - Thundat, Thomas
PY  - 2017
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/1571
AB  - Here we report the synthesis and structural, morphological, and photoluminescence analysis of white- and blue-light-emitting Dy3+- and Tm3+-doped Gd2Ti2O7 nanophosphors. Single-phase cubic Gd2Ti2O7 nanopowders consist of compact, dense aggregates of nanoparticles with an average size of similar to 25 nm for Dy3+-doped and similar to 50 nm for Tm3+-doped samples. The photoluminescence results indicated that ultraviolet (UV) light excitation of the Dy3+-doped sample resulted in direct generation of white light, while a dominant yellow emission was obtained under blue-light excitation. Intense blue light was obtained for Tm3+-doped Gd2Ti2O7 under UV excitation suggesting that this material could be used as a blue phosphor.
T2  - Luminescence
T1  - White- and blue-light-emitting dysprosium(III) and terbium(III)-doped gadolinium titanate phosphors
VL  - 32
IS  - 4
SP  - 539
EP  - 544
DO  - 10.1002/bio.3210
ER  - 

@article{
author = "Antić, Željka and Kuzman, Sanja and Đorđević, Vesna R. and Dramićanin, Miroslav and Thundat, Thomas",
year = "2017",
abstract = "Here we report the synthesis and structural, morphological, and photoluminescence analysis of white- and blue-light-emitting Dy3+- and Tm3+-doped Gd2Ti2O7 nanophosphors. Single-phase cubic Gd2Ti2O7 nanopowders consist of compact, dense aggregates of nanoparticles with an average size of similar to 25 nm for Dy3+-doped and similar to 50 nm for Tm3+-doped samples. The photoluminescence results indicated that ultraviolet (UV) light excitation of the Dy3+-doped sample resulted in direct generation of white light, while a dominant yellow emission was obtained under blue-light excitation. Intense blue light was obtained for Tm3+-doped Gd2Ti2O7 under UV excitation suggesting that this material could be used as a blue phosphor.",
journal = "Luminescence",
title = "White- and blue-light-emitting dysprosium(III) and terbium(III)-doped gadolinium titanate phosphors",
volume = "32",
number = "4",
pages = "539-544",
doi = "10.1002/bio.3210"
}

Antić, Ž., Kuzman, S., Đorđević, V. R., Dramićanin, M.,& Thundat, T.. (2017). White- and blue-light-emitting dysprosium(III) and terbium(III)-doped gadolinium titanate phosphors. in Luminescence, 32(4), 539-544.
https://doi.org/10.1002/bio.3210

Antić Ž, Kuzman S, Đorđević VR, Dramićanin M, Thundat T. White- and blue-light-emitting dysprosium(III) and terbium(III)-doped gadolinium titanate phosphors. in Luminescence. 2017;32(4):539-544.
doi:10.1002/bio.3210 .

Antić, Željka, Kuzman, Sanja, Đorđević, Vesna R., Dramićanin, Miroslav, Thundat, Thomas, "White- and blue-light-emitting dysprosium(III) and terbium(III)-doped gadolinium titanate phosphors" in Luminescence, 32, no. 4 (2017):539-544,
https://doi.org/10.1002/bio.3210 . .

TY  - JOUR
AU  - Antić, Željka
AU  - Prashanthi, Kovur
AU  - Jovanović, Dragana J.
AU  - Ahadi, Kaveh
AU  - Dramićanin, Miroslav
AU  - Thundat, Thomas
PY  - 2017
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/1752
AB  - Transparent, luminescent thin films of Dy3+-doped GdVO4 were fabricated by pulsed laser deposition technique on quartz substrates. Thin film structure, morphology and optical properties were investigated and discussed in detail. X-ray analysis shows relatively intense reflection peaks confirming that as-deposited films are highly crystalline with strong (200) preferred orientation. Cross-sectional scanning electron microscopy shows relatively dense film with an average thickness of similar to 340 nm. Band gap of Dy3+-doped GdVO4 thin film, estimated from diffuse reflectance spectrum, is 3.61 eV. Refractive index and extinction coefficient of thin films as a function of wavelength are extracted from ellipsometric spectra. The photoluminescent emission spectra have two dominant bands: one in the yellow (similar to 573 nm, F-4(9/2) - GT H-6(13/2) transition) followed by the other in the blue (similar to 484 nm, F-4(9/2) - GT H-6(15/2) transition) region resulting in the emission color placed in the white light region. (C) 2017 Elsevier B.V. All rights reserved.
T2  - Thin Solid Films
T1  - Transparent and highly luminescent dysprosium- doped GdVO4 thin films fabricated by pulsed laser deposition
VL  - 638
SP  - 332
EP  - 337
DO  - 10.1016/j.tsf.2017.07.069
ER  - 

@article{
author = "Antić, Željka and Prashanthi, Kovur and Jovanović, Dragana J. and Ahadi, Kaveh and Dramićanin, Miroslav and Thundat, Thomas",
year = "2017",
abstract = "Transparent, luminescent thin films of Dy3+-doped GdVO4 were fabricated by pulsed laser deposition technique on quartz substrates. Thin film structure, morphology and optical properties were investigated and discussed in detail. X-ray analysis shows relatively intense reflection peaks confirming that as-deposited films are highly crystalline with strong (200) preferred orientation. Cross-sectional scanning electron microscopy shows relatively dense film with an average thickness of similar to 340 nm. Band gap of Dy3+-doped GdVO4 thin film, estimated from diffuse reflectance spectrum, is 3.61 eV. Refractive index and extinction coefficient of thin films as a function of wavelength are extracted from ellipsometric spectra. The photoluminescent emission spectra have two dominant bands: one in the yellow (similar to 573 nm, F-4(9/2) - GT H-6(13/2) transition) followed by the other in the blue (similar to 484 nm, F-4(9/2) - GT H-6(15/2) transition) region resulting in the emission color placed in the white light region. (C) 2017 Elsevier B.V. All rights reserved.",
journal = "Thin Solid Films",
title = "Transparent and highly luminescent dysprosium- doped GdVO4 thin films fabricated by pulsed laser deposition",
volume = "638",
pages = "332-337",
doi = "10.1016/j.tsf.2017.07.069"
}

Antić, Ž., Prashanthi, K., Jovanović, D. J., Ahadi, K., Dramićanin, M.,& Thundat, T.. (2017). Transparent and highly luminescent dysprosium- doped GdVO4 thin films fabricated by pulsed laser deposition. in Thin Solid Films, 638, 332-337.
https://doi.org/10.1016/j.tsf.2017.07.069

Antić Ž, Prashanthi K, Jovanović DJ, Ahadi K, Dramićanin M, Thundat T. Transparent and highly luminescent dysprosium- doped GdVO4 thin films fabricated by pulsed laser deposition. in Thin Solid Films. 2017;638:332-337.
doi:10.1016/j.tsf.2017.07.069 .

Antić, Željka, Prashanthi, Kovur, Jovanović, Dragana J., Ahadi, Kaveh, Dramićanin, Miroslav, Thundat, Thomas, "Transparent and highly luminescent dysprosium- doped GdVO4 thin films fabricated by pulsed laser deposition" in Thin Solid Films, 638 (2017):332-337,
https://doi.org/10.1016/j.tsf.2017.07.069 . .

TY  - CONF
AU  - Dramićanin, Miroslav
AU  - Antić, Željka
AU  - Kuzman, Sanja
AU  - Thundat, Thomas
PY  - 2016
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/7134
T1  - Contactless Temperature Sensing via Luminescence
UR  - https://hdl.handle.net/21.15107/rcub_vinar_7134
ER  - 

@conference{
author = "Dramićanin, Miroslav and Antić, Željka and Kuzman, Sanja and Thundat, Thomas",
year = "2016",
title = "Contactless Temperature Sensing via Luminescence",
url = "https://hdl.handle.net/21.15107/rcub_vinar_7134"
}

Dramićanin, M., Antić, Ž., Kuzman, S.,& Thundat, T.. (2016). Contactless Temperature Sensing via Luminescence. .
https://hdl.handle.net/21.15107/rcub_vinar_7134

Dramićanin M, Antić Ž, Kuzman S, Thundat T. Contactless Temperature Sensing via Luminescence. 2016;.
https://hdl.handle.net/21.15107/rcub_vinar_7134 .

Dramićanin, Miroslav, Antić, Željka, Kuzman, Sanja, Thundat, Thomas, "Contactless Temperature Sensing via Luminescence" (2016),
https://hdl.handle.net/21.15107/rcub_vinar_7134 .

TY  - JOUR
AU  - Antić, Željka
AU  - Đorđević, Vesna R.
AU  - Dramićanin, Miroslav
AU  - Thundat, Thomas
PY  - 2016
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/914
AB  - Europium (III)-doped (YxSc1-x)(2)O-3 nanocrystalline powders of different compositions (x=0, 0.25, 0.5, 0.75 and 1) are synthesized using a polymer complex solution method. Comparative structural and optical characterization is carried out with powder X-ray diffraction and photoluminescence excitation, emission and emission decay measurements. Detailed information about unit cell parameter and energy levels of europium (III) ions are presented for all powder compositions. The second rank crystal field parameters (B-0(2)) and (B-2(2)) and crystal field strength (N-v) are calculated from the energies of Stark components of the F-7(1) manifold of the europium (III) emissions. It has been shown that the crystal field parameter changes with the powder composition and shows a linear relationship with the average ionic radii of cations in the solid solutions. A similar dependence is also found for the magnitude of splitting of F-7(1) manifold vs. unit cell parameter values. Moreover, this linear relationship is demonstrated for the whole family of europium (III)-doped mixed rare-earth sesquioxide hosts (RRO-3; R, R=rare earth ions) by taking into consideration results published in the literature so far. A simple, semi-empirical equation which relates structural properties (unit cell parameters, ionic radii) of the sesquioxide host material and the emission properties of europium (III) ions (energy splitting of the F-7(1) manifold, crystal field parameters and crystal field strength) are presented. Crown Copyright (C) 2015 Published by Elsevier Ltd and Techna Group S.r.l. All rights reserved.
PB  - Elsevier
T2  - Ceramics International
T1  - Photoluminescence of europium(III)-doped (YxSc1-x)(2)O-3 nanoparticles: Linear relationship between structural and emission properties
VL  - 42
IS  - 3
SP  - 3899
EP  - 3906
DO  - 10.1016/j.ceramint.2015.11.056
ER  - 

@article{
author = "Antić, Željka and Đorđević, Vesna R. and Dramićanin, Miroslav and Thundat, Thomas",
year = "2016",
abstract = "Europium (III)-doped (YxSc1-x)(2)O-3 nanocrystalline powders of different compositions (x=0, 0.25, 0.5, 0.75 and 1) are synthesized using a polymer complex solution method. Comparative structural and optical characterization is carried out with powder X-ray diffraction and photoluminescence excitation, emission and emission decay measurements. Detailed information about unit cell parameter and energy levels of europium (III) ions are presented for all powder compositions. The second rank crystal field parameters (B-0(2)) and (B-2(2)) and crystal field strength (N-v) are calculated from the energies of Stark components of the F-7(1) manifold of the europium (III) emissions. It has been shown that the crystal field parameter changes with the powder composition and shows a linear relationship with the average ionic radii of cations in the solid solutions. A similar dependence is also found for the magnitude of splitting of F-7(1) manifold vs. unit cell parameter values. Moreover, this linear relationship is demonstrated for the whole family of europium (III)-doped mixed rare-earth sesquioxide hosts (RRO-3; R, R=rare earth ions) by taking into consideration results published in the literature so far. A simple, semi-empirical equation which relates structural properties (unit cell parameters, ionic radii) of the sesquioxide host material and the emission properties of europium (III) ions (energy splitting of the F-7(1) manifold, crystal field parameters and crystal field strength) are presented. Crown Copyright (C) 2015 Published by Elsevier Ltd and Techna Group S.r.l. All rights reserved.",
publisher = "Elsevier",
journal = "Ceramics International",
title = "Photoluminescence of europium(III)-doped (YxSc1-x)(2)O-3 nanoparticles: Linear relationship between structural and emission properties",
volume = "42",
number = "3",
pages = "3899-3906",
doi = "10.1016/j.ceramint.2015.11.056"
}

Antić, Ž., Đorđević, V. R., Dramićanin, M.,& Thundat, T.. (2016). Photoluminescence of europium(III)-doped (YxSc1-x)(2)O-3 nanoparticles: Linear relationship between structural and emission properties. in Ceramics International
Elsevier., 42(3), 3899-3906.
https://doi.org/10.1016/j.ceramint.2015.11.056

Antić Ž, Đorđević VR, Dramićanin M, Thundat T. Photoluminescence of europium(III)-doped (YxSc1-x)(2)O-3 nanoparticles: Linear relationship between structural and emission properties. in Ceramics International. 2016;42(3):3899-3906.
doi:10.1016/j.ceramint.2015.11.056 .

Antić, Željka, Đorđević, Vesna R., Dramićanin, Miroslav, Thundat, Thomas, "Photoluminescence of europium(III)-doped (YxSc1-x)(2)O-3 nanoparticles: Linear relationship between structural and emission properties" in Ceramics International, 42, no. 3 (2016):3899-3906,
https://doi.org/10.1016/j.ceramint.2015.11.056 . .

TY  - JOUR
AU  - Antić, Željka
AU  - Dramićanin, Miroslav
AU  - Prashanthi, Kovur
AU  - Jovanović, Dragana J.
AU  - Kuzman, Sanja
AU  - Thundat, Thomas
PY  - 2016
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/1255
AB  - Lanthanide-doped vanadate thin films offer (i) a promising platform for luminescence-based noncontact temperature sensing; (ii) ratiometric/self-referencing absolute measurements; (iii) exceptional repeatability and reversibility for multirun uses and a long life cycle; (iv) 2% K-1 maximum temperature sensitivity (among the highest recorded for inorganic nanothermometers); (v) a temperature resolution greater than 0.5 K; and (vi) the potential for high-resolution 2D temperature mapping.
T2  - Advanced Materials
T1  - Pulsed Laser Deposited Dysprosium-Doped Gadolinium-Vanadate Thin Films for Noncontact, Self-Referencing Luminescence Thermometry
VL  - 28
IS  - 35
SP  - 7745
DO  - 10.1002/adma.201601176
ER  - 

@article{
author = "Antić, Željka and Dramićanin, Miroslav and Prashanthi, Kovur and Jovanović, Dragana J. and Kuzman, Sanja and Thundat, Thomas",
year = "2016",
abstract = "Lanthanide-doped vanadate thin films offer (i) a promising platform for luminescence-based noncontact temperature sensing; (ii) ratiometric/self-referencing absolute measurements; (iii) exceptional repeatability and reversibility for multirun uses and a long life cycle; (iv) 2% K-1 maximum temperature sensitivity (among the highest recorded for inorganic nanothermometers); (v) a temperature resolution greater than 0.5 K; and (vi) the potential for high-resolution 2D temperature mapping.",
journal = "Advanced Materials",
title = "Pulsed Laser Deposited Dysprosium-Doped Gadolinium-Vanadate Thin Films for Noncontact, Self-Referencing Luminescence Thermometry",
volume = "28",
number = "35",
pages = "7745",
doi = "10.1002/adma.201601176"
}

Antić, Ž., Dramićanin, M., Prashanthi, K., Jovanović, D. J., Kuzman, S.,& Thundat, T.. (2016). Pulsed Laser Deposited Dysprosium-Doped Gadolinium-Vanadate Thin Films for Noncontact, Self-Referencing Luminescence Thermometry. in Advanced Materials, 28(35), 7745.
https://doi.org/10.1002/adma.201601176

Antić Ž, Dramićanin M, Prashanthi K, Jovanović DJ, Kuzman S, Thundat T. Pulsed Laser Deposited Dysprosium-Doped Gadolinium-Vanadate Thin Films for Noncontact, Self-Referencing Luminescence Thermometry. in Advanced Materials. 2016;28(35):7745.
doi:10.1002/adma.201601176 .

Antić, Željka, Dramićanin, Miroslav, Prashanthi, Kovur, Jovanović, Dragana J., Kuzman, Sanja, Thundat, Thomas, "Pulsed Laser Deposited Dysprosium-Doped Gadolinium-Vanadate Thin Films for Noncontact, Self-Referencing Luminescence Thermometry" in Advanced Materials, 28, no. 35 (2016):7745,
https://doi.org/10.1002/adma.201601176 . .

TY  - JOUR
AU  - Antić, Željka
AU  - Prashanthi, Kovur
AU  - Ćulubrk, Sanja
AU  - Vuković, Katarina
AU  - Dramićanin, Miroslav
AU  - Thundat, Thomas
PY  - 2016
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/935
AB  - Here we report on preparation of Eu3+-doped Gd(2)Ti(2)O(7)pyrochlore luminescent thin films by pulsed laser deposition technique and their structural, morphological and optical characterization. The influence of annealing temperature and background gas (air vs. argon) on film photoluminescence is examined fort he optimization of post-deposition annealing conditions. As-deposited amorphous films become pure pyrochlore crystalline after calcination at temperatures higher than 1000 degrees C. Atomic force microscopy showed increase in the grain size from similar to 20 nm in the as-deposited to similar to 60 nm in the crystalline sample annealed at 1100 degrees C. Scanning electron microscopy showed dense films with the uniform thickness of about 700 nm. Luminescence spectra of crystalline films were complex and composed of better resolved emission lines than in the amorphous sample. Emission spectra showed that symmetry of Eu3+ sites become disturbed in annealed films due to the extrinsic thermal stress. Films treated in argon displayed similar emission and excitation spectral features like air-treated ones, but with better resolved emissionlines. Calculated quantum efficiency of emission showed that optimization of annealing conditions led to an enhancement of films luminescence. The highest quantum efficiency of emission and the longestlife time is found for the sample annealed at 1100 degrees C in presence of argon. Crown Copyright (C) 2015 Published by Elsevier B. V. All rights reserved.
PB  - Elsevier
T2  - Applied Surface Science
T1  - Effect of annealing conditions on structural and luminescencent properties of Eu3+-doped Gd2Ti2O7 thin films
VL  - 364
SP  - 273
EP  - 279
DO  - 10.1016/j.apsusc.2015.12.137
ER  - 

@article{
author = "Antić, Željka and Prashanthi, Kovur and Ćulubrk, Sanja and Vuković, Katarina and Dramićanin, Miroslav and Thundat, Thomas",
year = "2016",
abstract = "Here we report on preparation of Eu3+-doped Gd(2)Ti(2)O(7)pyrochlore luminescent thin films by pulsed laser deposition technique and their structural, morphological and optical characterization. The influence of annealing temperature and background gas (air vs. argon) on film photoluminescence is examined fort he optimization of post-deposition annealing conditions. As-deposited amorphous films become pure pyrochlore crystalline after calcination at temperatures higher than 1000 degrees C. Atomic force microscopy showed increase in the grain size from similar to 20 nm in the as-deposited to similar to 60 nm in the crystalline sample annealed at 1100 degrees C. Scanning electron microscopy showed dense films with the uniform thickness of about 700 nm. Luminescence spectra of crystalline films were complex and composed of better resolved emission lines than in the amorphous sample. Emission spectra showed that symmetry of Eu3+ sites become disturbed in annealed films due to the extrinsic thermal stress. Films treated in argon displayed similar emission and excitation spectral features like air-treated ones, but with better resolved emissionlines. Calculated quantum efficiency of emission showed that optimization of annealing conditions led to an enhancement of films luminescence. The highest quantum efficiency of emission and the longestlife time is found for the sample annealed at 1100 degrees C in presence of argon. Crown Copyright (C) 2015 Published by Elsevier B. V. All rights reserved.",
publisher = "Elsevier",
journal = "Applied Surface Science",
title = "Effect of annealing conditions on structural and luminescencent properties of Eu3+-doped Gd2Ti2O7 thin films",
volume = "364",
pages = "273-279",
doi = "10.1016/j.apsusc.2015.12.137"
}

Antić, Ž., Prashanthi, K., Ćulubrk, S., Vuković, K., Dramićanin, M.,& Thundat, T.. (2016). Effect of annealing conditions on structural and luminescencent properties of Eu3+-doped Gd2Ti2O7 thin films. in Applied Surface Science
Elsevier., 364, 273-279.
https://doi.org/10.1016/j.apsusc.2015.12.137

Antić Ž, Prashanthi K, Ćulubrk S, Vuković K, Dramićanin M, Thundat T. Effect of annealing conditions on structural and luminescencent properties of Eu3+-doped Gd2Ti2O7 thin films. in Applied Surface Science. 2016;364:273-279.
doi:10.1016/j.apsusc.2015.12.137 .

Antić, Željka, Prashanthi, Kovur, Ćulubrk, Sanja, Vuković, Katarina, Dramićanin, Miroslav, Thundat, Thomas, "Effect of annealing conditions on structural and luminescencent properties of Eu3+-doped Gd2Ti2O7 thin films" in Applied Surface Science, 364 (2016):273-279,
https://doi.org/10.1016/j.apsusc.2015.12.137 . .