TY  - JOUR
AU  - Kovačević, Milan S.
AU  - Djordjevich, Alexandar
AU  - Savović, Svetislav
AU  - Bajic, Jovan S.
AU  - Stupar, Dragan Z.
AU  - Slankamenac, Miloš P.
AU  - Kovačević, Milojko
PY  - 2013
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5592
AB  - As optical fibres are used ever more extensively in space applications, nuclear industry, medicine and high-energy physics experiments, it has become essential to investigate the influence of ionizing radiation on their characteristics. In this work, the radiation-induced attenuation at 530 nm is investigated experimentally in step-index multimode polymethyl-methacrylate plastic optical fibres exposed to low dose-rate gamma radiation. Cumulative doses ranged from 50 Gy to 500 Gy. The radiation induced attenuation has been empirically found to obey the power law RIA = aD(b), where D is the total radiation dose and a and b are the constants determined by fitting.
T2  - Nuclear technology and radiation protection
T1  - Measurement of (Co)-C-60 Gamma Radiation Induced Attenuation in Multimode Step-Index Pof At 530 Nm
VL  - 28
IS  - 2
SP  - 158
EP  - 162
DO  - 10.2298/NTRP1302158K
ER  - 

@article{
author = "Kovačević, Milan S. and Djordjevich, Alexandar and Savović, Svetislav and Bajic, Jovan S. and Stupar, Dragan Z. and Slankamenac, Miloš P. and Kovačević, Milojko",
year = "2013",
abstract = "As optical fibres are used ever more extensively in space applications, nuclear industry, medicine and high-energy physics experiments, it has become essential to investigate the influence of ionizing radiation on their characteristics. In this work, the radiation-induced attenuation at 530 nm is investigated experimentally in step-index multimode polymethyl-methacrylate plastic optical fibres exposed to low dose-rate gamma radiation. Cumulative doses ranged from 50 Gy to 500 Gy. The radiation induced attenuation has been empirically found to obey the power law RIA = aD(b), where D is the total radiation dose and a and b are the constants determined by fitting.",
journal = "Nuclear technology and radiation protection",
title = "Measurement of (Co)-C-60 Gamma Radiation Induced Attenuation in Multimode Step-Index Pof At 530 Nm",
volume = "28",
number = "2",
pages = "158-162",
doi = "10.2298/NTRP1302158K"
}

Kovačević, M. S., Djordjevich, A., Savović, S., Bajic, J. S., Stupar, D. Z., Slankamenac, M. P.,& Kovačević, M.. (2013). Measurement of (Co)-C-60 Gamma Radiation Induced Attenuation in Multimode Step-Index Pof At 530 Nm. in Nuclear technology and radiation protection, 28(2), 158-162.
https://doi.org/10.2298/NTRP1302158K

Kovačević MS, Djordjevich A, Savović S, Bajic JS, Stupar DZ, Slankamenac MP, Kovačević M. Measurement of (Co)-C-60 Gamma Radiation Induced Attenuation in Multimode Step-Index Pof At 530 Nm. in Nuclear technology and radiation protection. 2013;28(2):158-162.
doi:10.2298/NTRP1302158K .

Kovačević, Milan S., Djordjevich, Alexandar, Savović, Svetislav, Bajic, Jovan S., Stupar, Dragan Z., Slankamenac, Miloš P., Kovačević, Milojko, "Measurement of (Co)-C-60 Gamma Radiation Induced Attenuation in Multimode Step-Index Pof At 530 Nm" in Nuclear technology and radiation protection, 28, no. 2 (2013):158-162,
https://doi.org/10.2298/NTRP1302158K . .

TY  - JOUR
AU  - Jelenkovic, Emil V.
AU  - Kovačević, Milan S.
AU  - Stupar, Dragan Z.
AU  - Bajic, Jovan S.
AU  - Slankamenac, Miloš P.
AU  - Kovačević, Milojko
AU  - To, Suet
PY  - 2013
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5695
AB  - N-type thin film transistors (TFTs) fabricated with fluorinated and hydrogenated polysilicon were exposed to gamma radiation to a cumulative dose up to 1200 Gy(Si). During irradiation, the gate electrode was biased with a positive voltage up to 4.8 V. The effect of irradiation on the electrical characteristics of the devices was monitored after the irradiation steps and in a prolonged period after irradiation. The main monitoring parameter was the threshold voltage which was found to have linear dependence on irradiation dose. This, together with obtained low fading, suggests that thin transistors have potential as radiation dosimeters.
T2  - Measurement Science and Technology
T1  - N-channel polysilicon thin film transistors as gamma-ray detectors
VL  - 24
IS  - 10
DO  - 10.1088/0957-0233/24/10/105103
ER  - 

@article{
author = "Jelenkovic, Emil V. and Kovačević, Milan S. and Stupar, Dragan Z. and Bajic, Jovan S. and Slankamenac, Miloš P. and Kovačević, Milojko and To, Suet",
year = "2013",
abstract = "N-type thin film transistors (TFTs) fabricated with fluorinated and hydrogenated polysilicon were exposed to gamma radiation to a cumulative dose up to 1200 Gy(Si). During irradiation, the gate electrode was biased with a positive voltage up to 4.8 V. The effect of irradiation on the electrical characteristics of the devices was monitored after the irradiation steps and in a prolonged period after irradiation. The main monitoring parameter was the threshold voltage which was found to have linear dependence on irradiation dose. This, together with obtained low fading, suggests that thin transistors have potential as radiation dosimeters.",
journal = "Measurement Science and Technology",
title = "N-channel polysilicon thin film transistors as gamma-ray detectors",
volume = "24",
number = "10",
doi = "10.1088/0957-0233/24/10/105103"
}

Jelenkovic, E. V., Kovačević, M. S., Stupar, D. Z., Bajic, J. S., Slankamenac, M. P., Kovačević, M.,& To, S.. (2013). N-channel polysilicon thin film transistors as gamma-ray detectors. in Measurement Science and Technology, 24(10).
https://doi.org/10.1088/0957-0233/24/10/105103

Jelenkovic EV, Kovačević MS, Stupar DZ, Bajic JS, Slankamenac MP, Kovačević M, To S. N-channel polysilicon thin film transistors as gamma-ray detectors. in Measurement Science and Technology. 2013;24(10).
doi:10.1088/0957-0233/24/10/105103 .

Jelenkovic, Emil V., Kovačević, Milan S., Stupar, Dragan Z., Bajic, Jovan S., Slankamenac, Miloš P., Kovačević, Milojko, To, Suet, "N-channel polysilicon thin film transistors as gamma-ray detectors" in Measurement Science and Technology, 24, no. 10 (2013),
https://doi.org/10.1088/0957-0233/24/10/105103 . .