TY  - JOUR
AU  - Stanković, K.
AU  - Osmokrović, Predrag V.
AU  - Dolicanin, C.
AU  - Vujisic, M.
AU  - Vasić, Aleksandra
PY  - 2009
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/3682
AB  - This paper investigates the possibility of applying the time enlargement law for predicting how gas-insulated systems would behave when exposed to pulse voltage loads of different shapes. For this purpose, the validity of the time enlargement law in this case has first been tested and the most suitable theoretical distribution function of the breakdown time random variable established. Pulse characteristics of the investigated insulating system have subsequently been determined, by applying the time enlargement law to experimental values of the breakdown time random variable, obtained in measurements with predefined shapes of the voltage load. Pulse characteristics thus obtained were compared with the corresponding pulse characteristics derived from the area law. The results demonstrate the advantages of the time enlargement law method, especially in the case of a non-homogeneous electric field. The experiments were conducted with SF(6) gas, at different values of the pd product (pressure x inter-electrode gap), in a wide frequency range of applied pulse voltages, for a homogeneous, radial and point-plane electrode configuration.
T2  - Plasma Sources Science and Technology
T1  - Time enlargement law for gas pulse breakdown
VL  - 18
IS  - 2
DO  - 10.1088/0963-0252/18/2/025028
ER  - 

@article{
author = "Stanković, K. and Osmokrović, Predrag V. and Dolicanin, C. and Vujisic, M. and Vasić, Aleksandra",
year = "2009",
abstract = "This paper investigates the possibility of applying the time enlargement law for predicting how gas-insulated systems would behave when exposed to pulse voltage loads of different shapes. For this purpose, the validity of the time enlargement law in this case has first been tested and the most suitable theoretical distribution function of the breakdown time random variable established. Pulse characteristics of the investigated insulating system have subsequently been determined, by applying the time enlargement law to experimental values of the breakdown time random variable, obtained in measurements with predefined shapes of the voltage load. Pulse characteristics thus obtained were compared with the corresponding pulse characteristics derived from the area law. The results demonstrate the advantages of the time enlargement law method, especially in the case of a non-homogeneous electric field. The experiments were conducted with SF(6) gas, at different values of the pd product (pressure x inter-electrode gap), in a wide frequency range of applied pulse voltages, for a homogeneous, radial and point-plane electrode configuration.",
journal = "Plasma Sources Science and Technology",
title = "Time enlargement law for gas pulse breakdown",
volume = "18",
number = "2",
doi = "10.1088/0963-0252/18/2/025028"
}

Stanković, K., Osmokrović, P. V., Dolicanin, C., Vujisic, M.,& Vasić, A.. (2009). Time enlargement law for gas pulse breakdown. in Plasma Sources Science and Technology, 18(2).
https://doi.org/10.1088/0963-0252/18/2/025028

Stanković K, Osmokrović PV, Dolicanin C, Vujisic M, Vasić A. Time enlargement law for gas pulse breakdown. in Plasma Sources Science and Technology. 2009;18(2).
doi:10.1088/0963-0252/18/2/025028 .

Stanković, K., Osmokrović, Predrag V., Dolicanin, C., Vujisic, M., Vasić, Aleksandra, "Time enlargement law for gas pulse breakdown" in Plasma Sources Science and Technology, 18, no. 2 (2009),
https://doi.org/10.1088/0963-0252/18/2/025028 . .

TY  - JOUR
AU  - Vasić, Aleksandra
AU  - Osmokrović, Predrag V.
AU  - Vujisic, M.
AU  - Dolicanin, C.
AU  - Stanković, K.
PY  - 2008
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/3557
AB  - Possibilities for the application of solar systems based on photovoltaic conversion of solar energy are very wide, primarily because of their relatively low cost and very important fact that solar energy is most acceptable source of electrical energy from the environmental point of view. However, as every other energy source, PV technology also has some limitations and disadvantages. In the first place, compared to some other sources, the efficiency of PV modules (i.e. solar cells) is relatively small. One of the most limiting factors for all kinds of detectors is their noise, especially frequency dependent generation-recombination noise, burst noise and 1/f noise. It has been suggested that the cause of the 1/f noise is the trapping of electrons at the surface states as well as in the bulk. That is why the improvement of electrical characteristics of contact layers is very important. Silicides are widely investigated as promising reliable and reproducible contacts. The aim of this paper is to present the possibilities of lowering noise in silicides (that could be used as contacts) and in solar cells as a whole.
T2  - Journal of Optoelectronics and Advanced Materials
T1  - Possibilities of improvement of silicon solar cell characteristics by lowering noise
VL  - 10
IS  - 10
SP  - 2800
EP  - 2804
UR  - https://hdl.handle.net/21.15107/rcub_vinar_3557
ER  - 

@article{
author = "Vasić, Aleksandra and Osmokrović, Predrag V. and Vujisic, M. and Dolicanin, C. and Stanković, K.",
year = "2008",
abstract = "Possibilities for the application of solar systems based on photovoltaic conversion of solar energy are very wide, primarily because of their relatively low cost and very important fact that solar energy is most acceptable source of electrical energy from the environmental point of view. However, as every other energy source, PV technology also has some limitations and disadvantages. In the first place, compared to some other sources, the efficiency of PV modules (i.e. solar cells) is relatively small. One of the most limiting factors for all kinds of detectors is their noise, especially frequency dependent generation-recombination noise, burst noise and 1/f noise. It has been suggested that the cause of the 1/f noise is the trapping of electrons at the surface states as well as in the bulk. That is why the improvement of electrical characteristics of contact layers is very important. Silicides are widely investigated as promising reliable and reproducible contacts. The aim of this paper is to present the possibilities of lowering noise in silicides (that could be used as contacts) and in solar cells as a whole.",
journal = "Journal of Optoelectronics and Advanced Materials",
title = "Possibilities of improvement of silicon solar cell characteristics by lowering noise",
volume = "10",
number = "10",
pages = "2800-2804",
url = "https://hdl.handle.net/21.15107/rcub_vinar_3557"
}

Vasić, A., Osmokrović, P. V., Vujisic, M., Dolicanin, C.,& Stanković, K.. (2008). Possibilities of improvement of silicon solar cell characteristics by lowering noise. in Journal of Optoelectronics and Advanced Materials, 10(10), 2800-2804.
https://hdl.handle.net/21.15107/rcub_vinar_3557

Vasić A, Osmokrović PV, Vujisic M, Dolicanin C, Stanković K. Possibilities of improvement of silicon solar cell characteristics by lowering noise. in Journal of Optoelectronics and Advanced Materials. 2008;10(10):2800-2804.
https://hdl.handle.net/21.15107/rcub_vinar_3557 .

Vasić, Aleksandra, Osmokrović, Predrag V., Vujisic, M., Dolicanin, C., Stanković, K., "Possibilities of improvement of silicon solar cell characteristics by lowering noise" in Journal of Optoelectronics and Advanced Materials, 10, no. 10 (2008):2800-2804,
https://hdl.handle.net/21.15107/rcub_vinar_3557 .

TY  - CONF
AU  - Stanković, Srboljub
AU  - Petrović, Milica S.
AU  - Kovačević, Milojko
AU  - Vasić, Aleksandra
AU  - Osmokrović, Predrag V.
AU  - Lončar, Boris B.
PY  - 2007
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6681
AB  - CdZnTe detectors have been employed in diagnostic X-ray spectroscopy. This paper presents the Monte Carlo calculation of X-ray deposited energy in a CdZnTe detector for different energies of photon beam. In incident photon direction, the distribution of absorbed dose as deposited energy in detector is determined, Based on the dependence of the detector response on the thickness and different Zn fractions, some conclusions about changes of the material characteristics could be drawn. Results of numerical simulation suggest that the CdZnTe detector could be suitable for X-ray low energy.
C3  - Materials Science Forum
T1  - Monte Carlo calculation of X-rays deposited energy in CdZnTe detector
VL  - 555
SP  - 141
EP  - +
DO  - 10.4028/www.scientific.net/MSF.555.141
ER  - 

@conference{
author = "Stanković, Srboljub and Petrović, Milica S. and Kovačević, Milojko and Vasić, Aleksandra and Osmokrović, Predrag V. and Lončar, Boris B.",
year = "2007",
abstract = "CdZnTe detectors have been employed in diagnostic X-ray spectroscopy. This paper presents the Monte Carlo calculation of X-ray deposited energy in a CdZnTe detector for different energies of photon beam. In incident photon direction, the distribution of absorbed dose as deposited energy in detector is determined, Based on the dependence of the detector response on the thickness and different Zn fractions, some conclusions about changes of the material characteristics could be drawn. Results of numerical simulation suggest that the CdZnTe detector could be suitable for X-ray low energy.",
journal = "Materials Science Forum",
title = "Monte Carlo calculation of X-rays deposited energy in CdZnTe detector",
volume = "555",
pages = "141-+",
doi = "10.4028/www.scientific.net/MSF.555.141"
}

Stanković, S., Petrović, M. S., Kovačević, M., Vasić, A., Osmokrović, P. V.,& Lončar, B. B.. (2007). Monte Carlo calculation of X-rays deposited energy in CdZnTe detector. in Materials Science Forum, 555, 141-+.
https://doi.org/10.4028/www.scientific.net/MSF.555.141

Stanković S, Petrović MS, Kovačević M, Vasić A, Osmokrović PV, Lončar BB. Monte Carlo calculation of X-rays deposited energy in CdZnTe detector. in Materials Science Forum. 2007;555:141-+.
doi:10.4028/www.scientific.net/MSF.555.141 .

Stanković, Srboljub, Petrović, Milica S., Kovačević, Milojko, Vasić, Aleksandra, Osmokrović, Predrag V., Lončar, Boris B., "Monte Carlo calculation of X-rays deposited energy in CdZnTe detector" in Materials Science Forum, 555 (2007):141-+,
https://doi.org/10.4028/www.scientific.net/MSF.555.141 . .

TY  - CONF
AU  - Osmokrović, Predrag V.
AU  - Lončar, Boris B.
AU  - Stanković, Srboljub
AU  - Vasić, Aleksandra
PY  - 2006
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6590
AB  - This paper presents an innovative method for efficient characterization of relevant characteristics of non-linear over-voltage protection elements in low-voltage applications. Standard measuring equipment is modified to enable an efficient and repeatable experimental procedure to investigate characteristics of over-voltage diodes and varistors: volt-ampere characteristic, volt-ohm characteristic, coefficient of non-linearity, and finally, the breakdown voltage. Additionally, an innovative aging estimate algorithm was used. Furthermore, the pseudo-empiric method using the area law is used to determine an impulse characteristic of a gas filled surge arrester (GFSA). Suggested experimental procedure offers higher measuring accuracy and repeatability because internal temperature of non-linear elements is virtually unchanged during all experiments. All experimental results are treated statistically to prove high repeatability of suggested approach. Comparison of results obtained by suggested experimental method and classical approach, shows minimal discrepancies.
PB  - IEEE Computer Society
C3  - MIEL : 25th International Conference on Microelectronics
T1  - The innovative method for determining characteristics of over-voltage protection elements
SP  - 693
DO  - 10.1109/ICMEL.2006.1651052
UR  - https://hdl.handle.net/21.15107/rcub_vinar_6590
ER  - 

@conference{
author = "Osmokrović, Predrag V. and Lončar, Boris B. and Stanković, Srboljub and Vasić, Aleksandra",
year = "2006",
abstract = "This paper presents an innovative method for efficient characterization of relevant characteristics of non-linear over-voltage protection elements in low-voltage applications. Standard measuring equipment is modified to enable an efficient and repeatable experimental procedure to investigate characteristics of over-voltage diodes and varistors: volt-ampere characteristic, volt-ohm characteristic, coefficient of non-linearity, and finally, the breakdown voltage. Additionally, an innovative aging estimate algorithm was used. Furthermore, the pseudo-empiric method using the area law is used to determine an impulse characteristic of a gas filled surge arrester (GFSA). Suggested experimental procedure offers higher measuring accuracy and repeatability because internal temperature of non-linear elements is virtually unchanged during all experiments. All experimental results are treated statistically to prove high repeatability of suggested approach. Comparison of results obtained by suggested experimental method and classical approach, shows minimal discrepancies.",
publisher = "IEEE Computer Society",
journal = "MIEL : 25th International Conference on Microelectronics",
title = "The innovative method for determining characteristics of over-voltage protection elements",
pages = "693",
doi = "10.1109/ICMEL.2006.1651052",
url = "https://hdl.handle.net/21.15107/rcub_vinar_6590"
}

Osmokrović, P. V., Lončar, B. B., Stanković, S.,& Vasić, A.. (2006). The innovative method for determining characteristics of over-voltage protection elements. in MIEL : 25th International Conference on Microelectronics
IEEE Computer Society., 693.
https://doi.org/10.1109/ICMEL.2006.1651052
https://hdl.handle.net/21.15107/rcub_vinar_6590

Osmokrović PV, Lončar BB, Stanković S, Vasić A. The innovative method for determining characteristics of over-voltage protection elements. in MIEL : 25th International Conference on Microelectronics. 2006;:693.
doi:10.1109/ICMEL.2006.1651052
https://hdl.handle.net/21.15107/rcub_vinar_6590 .

Osmokrović, Predrag V., Lončar, Boris B., Stanković, Srboljub, Vasić, Aleksandra, "The innovative method for determining characteristics of over-voltage protection elements" in MIEL : 25th International Conference on Microelectronics (2006):693,
https://doi.org/10.1109/ICMEL.2006.1651052 .,
https://hdl.handle.net/21.15107/rcub_vinar_6590 .

TY  - JOUR
AU  - Stanković, Srboljub
AU  - Ilić, Radovan D.
AU  - Petrović, Milica S.
AU  - Lončar, Boris B.
AU  - Vasić, Aleksandra
PY  - 2006
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6612
AB  - The use of semiconductor materials in radiation processing, radiation therapy and diagnostics, and detection of cosmic radiation motivated development of numerical methods for its radiological characterization. This paper presents the application of the Monte Carlo method using the FOTELP-2K4 code for radiological characterization of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) dosimeter. The advantages of MOSFET dosimeters include small size, immediate readout, and ease of use for a wide photon energy range. In order to determine the dosimeter response accurately, distribution of the absorbed dose in the MOSFET structure has been investigated. Our results show that the absorbed dose distribution calculated by the presented simulation model compares well with the published data.
T2  - Materials Science Forum
T1  - Radiological characterization of semiconductor materials in field effect transistor dosimeter by Monte Carlo method
VL  - 518
SP  - 361
EP  - 365
DO  - 10.4028/www.scientific.net/MSF.518.361
ER  - 

@article{
author = "Stanković, Srboljub and Ilić, Radovan D. and Petrović, Milica S. and Lončar, Boris B. and Vasić, Aleksandra",
year = "2006",
abstract = "The use of semiconductor materials in radiation processing, radiation therapy and diagnostics, and detection of cosmic radiation motivated development of numerical methods for its radiological characterization. This paper presents the application of the Monte Carlo method using the FOTELP-2K4 code for radiological characterization of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) dosimeter. The advantages of MOSFET dosimeters include small size, immediate readout, and ease of use for a wide photon energy range. In order to determine the dosimeter response accurately, distribution of the absorbed dose in the MOSFET structure has been investigated. Our results show that the absorbed dose distribution calculated by the presented simulation model compares well with the published data.",
journal = "Materials Science Forum",
title = "Radiological characterization of semiconductor materials in field effect transistor dosimeter by Monte Carlo method",
volume = "518",
pages = "361-365",
doi = "10.4028/www.scientific.net/MSF.518.361"
}

Stanković, S., Ilić, R. D., Petrović, M. S., Lončar, B. B.,& Vasić, A.. (2006). Radiological characterization of semiconductor materials in field effect transistor dosimeter by Monte Carlo method. in Materials Science Forum, 518, 361-365.
https://doi.org/10.4028/www.scientific.net/MSF.518.361

Stanković S, Ilić RD, Petrović MS, Lončar BB, Vasić A. Radiological characterization of semiconductor materials in field effect transistor dosimeter by Monte Carlo method. in Materials Science Forum. 2006;518:361-365.
doi:10.4028/www.scientific.net/MSF.518.361 .

Stanković, Srboljub, Ilić, Radovan D., Petrović, Milica S., Lončar, Boris B., Vasić, Aleksandra, "Radiological characterization of semiconductor materials in field effect transistor dosimeter by Monte Carlo method" in Materials Science Forum, 518 (2006):361-365,
https://doi.org/10.4028/www.scientific.net/MSF.518.361 . .