TY  - CONF
AU  - Stepanović, O.
AU  - Popović, M.
AU  - Novaković, M.
AU  - Nenadović, Miloš
AU  - Potočnik, Jelena
AU  - Rakočević, Zlatko
PY  - 2019
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/11879
AB  - In this work we studied the influence of In+ ion implantation on structural and optical characteristics on semiconductors with direct (GaAs) [1] and indirect (Si) [2] band gap. A plenty of information on physical properties of various semiconductor materials can be obtained from optical spectra. In order to determine optical parameters, refraction index and extinction coefficient, we employed spectroscopic ellipsometry as a very useful technique. The parameters of the implantation process and the optical properties of the implanted GaAs and Si wafers are discussed with particular emphasis on the SWIR (Short Wavelength Infrared) region. In+ ions were implanted into n-type GaAs (100) and n-type Si (100) at an acceleration energy of 60 keV with doses of 1x1014 ion/cm2 , 5x1014 ion/cm2 , 1x1015 ion/cm2 and 2x1015 ion/cm2 in both cases. The change of the optical parameters in the subsurface region of the GaAs and Si wafers caused by implanted In+ ions is observed comparing the values of ellypsometric data and energy gap (Eg) of unimplanted and implanted wafers. In order to evaluate the crystallinity of the samples we used TEM microscopy.
PB  - Belgrade : Vinča Institute of Nuclear Sciences, University of Belgrade
C3  - PHOTONICA2019 : 7th International School and Conference on Photonics & Machine Learning with Photonics Symposium : Book of abstracts
T1  - Influence of In+ ions implantation in GaAs and Si on their optical characteristics
SP  - 111
EP  - 111
UR  - https://hdl.handle.net/21.15107/rcub_vinar_11879
ER  - 

@conference{
author = "Stepanović, O. and Popović, M. and Novaković, M. and Nenadović, Miloš and Potočnik, Jelena and Rakočević, Zlatko",
year = "2019",
abstract = "In this work we studied the influence of In+ ion implantation on structural and optical characteristics on semiconductors with direct (GaAs) [1] and indirect (Si) [2] band gap. A plenty of information on physical properties of various semiconductor materials can be obtained from optical spectra. In order to determine optical parameters, refraction index and extinction coefficient, we employed spectroscopic ellipsometry as a very useful technique. The parameters of the implantation process and the optical properties of the implanted GaAs and Si wafers are discussed with particular emphasis on the SWIR (Short Wavelength Infrared) region. In+ ions were implanted into n-type GaAs (100) and n-type Si (100) at an acceleration energy of 60 keV with doses of 1x1014 ion/cm2 , 5x1014 ion/cm2 , 1x1015 ion/cm2 and 2x1015 ion/cm2 in both cases. The change of the optical parameters in the subsurface region of the GaAs and Si wafers caused by implanted In+ ions is observed comparing the values of ellypsometric data and energy gap (Eg) of unimplanted and implanted wafers. In order to evaluate the crystallinity of the samples we used TEM microscopy.",
publisher = "Belgrade : Vinča Institute of Nuclear Sciences, University of Belgrade",
journal = "PHOTONICA2019 : 7th International School and Conference on Photonics & Machine Learning with Photonics Symposium : Book of abstracts",
title = "Influence of In+ ions implantation in GaAs and Si on their optical characteristics",
pages = "111-111",
url = "https://hdl.handle.net/21.15107/rcub_vinar_11879"
}

Stepanović, O., Popović, M., Novaković, M., Nenadović, M., Potočnik, J.,& Rakočević, Z.. (2019). Influence of In+ ions implantation in GaAs and Si on their optical characteristics. in PHOTONICA2019 : 7th International School and Conference on Photonics & Machine Learning with Photonics Symposium : Book of abstracts
Belgrade : Vinča Institute of Nuclear Sciences, University of Belgrade., 111-111.
https://hdl.handle.net/21.15107/rcub_vinar_11879

Stepanović O, Popović M, Novaković M, Nenadović M, Potočnik J, Rakočević Z. Influence of In+ ions implantation in GaAs and Si on their optical characteristics. in PHOTONICA2019 : 7th International School and Conference on Photonics & Machine Learning with Photonics Symposium : Book of abstracts. 2019;:111-111.
https://hdl.handle.net/21.15107/rcub_vinar_11879 .

Stepanović, O., Popović, M., Novaković, M., Nenadović, Miloš, Potočnik, Jelena, Rakočević, Zlatko, "Influence of In+ ions implantation in GaAs and Si on their optical characteristics" in PHOTONICA2019 : 7th International School and Conference on Photonics & Machine Learning with Photonics Symposium : Book of abstracts (2019):111-111,
https://hdl.handle.net/21.15107/rcub_vinar_11879 .