TY  - JOUR
AU  - Popović, Maja
AU  - Novaković, Mirjana M.
AU  - Traverse, A.
AU  - Zhang, Kun
AU  - Bibić, Nataša M.
AU  - Hofsaess, H.
AU  - Lieb, K. P.
PY  - 2013
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5385
AB  - Polycrystalline titaniumnitride (TiN) layers of 240 nmthickness and columnar microstructure were deposited at 150 degrees C by d. c. reactive sputtering on Si(100) wafers and then irradiated at roomtemperature with either 80 keV V+ ions (at fluences of up to 2x10(17) ions/cm(2)) or 200 keV Ar+ ions (at fluences of 5x10(15)-2x10(16) ions/cm(2)). Rutherford backscattering spectroscopy, cross-sectional (high-resolution) transmission electron microscopy and X-ray diffraction were used to characterize ion-induced changes in the structural properties of the films. Their optical and electric properties were analyzed by infrared reflectance (IR) and electric resistivity measurements. After deposition, the stoichiometric TiN films had a (111) texture. Ion implantation generated a damaged surface layer of nanocrystalline structure, which extended beyond the implantation profile, but left an undamaged bottom zone of (111) orientation. This layer geometry determined from transmission electron microscopy was inferred in the analysis of IR reflectance data using the Drude model, and the variation of the electric and optical resistivity with the irradiation was deduced. The results were compared to those recently gained for ion-implanted reactively sputtered chromium nitride films. (C) 2013 Elsevier B.V. All rights reserved.
T2  - Thin Solid Films
T1  - Modifications of reactively sputtered titanium nitride films by argon and vanadium ion implantation: Microstructural and opto-electric properties
VL  - 531
SP  - 189
EP  - 196
DO  - 10.1016/j.tsf.2013.01.045
ER  - 

@article{
author = "Popović, Maja and Novaković, Mirjana M. and Traverse, A. and Zhang, Kun and Bibić, Nataša M. and Hofsaess, H. and Lieb, K. P.",
year = "2013",
abstract = "Polycrystalline titaniumnitride (TiN) layers of 240 nmthickness and columnar microstructure were deposited at 150 degrees C by d. c. reactive sputtering on Si(100) wafers and then irradiated at roomtemperature with either 80 keV V+ ions (at fluences of up to 2x10(17) ions/cm(2)) or 200 keV Ar+ ions (at fluences of 5x10(15)-2x10(16) ions/cm(2)). Rutherford backscattering spectroscopy, cross-sectional (high-resolution) transmission electron microscopy and X-ray diffraction were used to characterize ion-induced changes in the structural properties of the films. Their optical and electric properties were analyzed by infrared reflectance (IR) and electric resistivity measurements. After deposition, the stoichiometric TiN films had a (111) texture. Ion implantation generated a damaged surface layer of nanocrystalline structure, which extended beyond the implantation profile, but left an undamaged bottom zone of (111) orientation. This layer geometry determined from transmission electron microscopy was inferred in the analysis of IR reflectance data using the Drude model, and the variation of the electric and optical resistivity with the irradiation was deduced. The results were compared to those recently gained for ion-implanted reactively sputtered chromium nitride films. (C) 2013 Elsevier B.V. All rights reserved.",
journal = "Thin Solid Films",
title = "Modifications of reactively sputtered titanium nitride films by argon and vanadium ion implantation: Microstructural and opto-electric properties",
volume = "531",
pages = "189-196",
doi = "10.1016/j.tsf.2013.01.045"
}

Popović, M., Novaković, M. M., Traverse, A., Zhang, K., Bibić, N. M., Hofsaess, H.,& Lieb, K. P.. (2013). Modifications of reactively sputtered titanium nitride films by argon and vanadium ion implantation: Microstructural and opto-electric properties. in Thin Solid Films, 531, 189-196.
https://doi.org/10.1016/j.tsf.2013.01.045

Popović M, Novaković MM, Traverse A, Zhang K, Bibić NM, Hofsaess H, Lieb KP. Modifications of reactively sputtered titanium nitride films by argon and vanadium ion implantation: Microstructural and opto-electric properties. in Thin Solid Films. 2013;531:189-196.
doi:10.1016/j.tsf.2013.01.045 .

Popović, Maja, Novaković, Mirjana M., Traverse, A., Zhang, Kun, Bibić, Nataša M., Hofsaess, H., Lieb, K. P., "Modifications of reactively sputtered titanium nitride films by argon and vanadium ion implantation: Microstructural and opto-electric properties" in Thin Solid Films, 531 (2013):189-196,
https://doi.org/10.1016/j.tsf.2013.01.045 . .

TY  - JOUR
AU  - Novaković, Mirjana M.
AU  - Traverse, A.
AU  - Popović, Maja
AU  - Lieb, K. P.
AU  - Zhang, Kun
AU  - Bibić, Nataša M.
PY  - 2012
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6964
AB  - We report on modifications of 280-nm thin polycrystalline CrN layers caused by vanadium ion implantation. The CrN layers were deposited at 150 degrees C by d.c. reactive sputtering on Si(100) wafers and then implanted at room temperature with 80-keV V+ ions to fluences of 1 x 10(17) and 2 x 10(17) ions/cm(2). Rutherford backscattering spectroscopy, cross-sectional transmission electron microscopy, and X-ray diffraction were used to characterize changes in the structural properties of the films. Their optical and electrical properties were analyzed by infrared spectroscopy in reflection mode and electrical resistivity measurements. CrN was found to keep its cubic structure under the conditions of vanadium ion implantation used here. The initially partially non-metallic CrN layer displays metallic character under implantation, which may be related to the possible formation of Cr1-xVxN.
T2  - Radiation Effects and Defects in Solids
T1  - Microstructural and opto-electrical properties of chromium nitride films implanted with vanadium ions
VL  - 167
IS  - 7
SP  - 496
EP  - 505
DO  - 10.1080/10420150.2012.656639
ER  - 

@article{
author = "Novaković, Mirjana M. and Traverse, A. and Popović, Maja and Lieb, K. P. and Zhang, Kun and Bibić, Nataša M.",
year = "2012",
abstract = "We report on modifications of 280-nm thin polycrystalline CrN layers caused by vanadium ion implantation. The CrN layers were deposited at 150 degrees C by d.c. reactive sputtering on Si(100) wafers and then implanted at room temperature with 80-keV V+ ions to fluences of 1 x 10(17) and 2 x 10(17) ions/cm(2). Rutherford backscattering spectroscopy, cross-sectional transmission electron microscopy, and X-ray diffraction were used to characterize changes in the structural properties of the films. Their optical and electrical properties were analyzed by infrared spectroscopy in reflection mode and electrical resistivity measurements. CrN was found to keep its cubic structure under the conditions of vanadium ion implantation used here. The initially partially non-metallic CrN layer displays metallic character under implantation, which may be related to the possible formation of Cr1-xVxN.",
journal = "Radiation Effects and Defects in Solids",
title = "Microstructural and opto-electrical properties of chromium nitride films implanted with vanadium ions",
volume = "167",
number = "7",
pages = "496-505",
doi = "10.1080/10420150.2012.656639"
}

Novaković, M. M., Traverse, A., Popović, M., Lieb, K. P., Zhang, K.,& Bibić, N. M.. (2012). Microstructural and opto-electrical properties of chromium nitride films implanted with vanadium ions. in Radiation Effects and Defects in Solids, 167(7), 496-505.
https://doi.org/10.1080/10420150.2012.656639

Novaković MM, Traverse A, Popović M, Lieb KP, Zhang K, Bibić NM. Microstructural and opto-electrical properties of chromium nitride films implanted with vanadium ions. in Radiation Effects and Defects in Solids. 2012;167(7):496-505.
doi:10.1080/10420150.2012.656639 .

Novaković, Mirjana M., Traverse, A., Popović, Maja, Lieb, K. P., Zhang, Kun, Bibić, Nataša M., "Microstructural and opto-electrical properties of chromium nitride films implanted with vanadium ions" in Radiation Effects and Defects in Solids, 167, no. 7 (2012):496-505,
https://doi.org/10.1080/10420150.2012.656639 . .