TY  - CONF
AU  - Spreitzer, Matjaž
AU  - Bučar, Lucija
AU  - Ho, Hsin-Chia
AU  - Trstenjak, Urška
AU  - Jovanović, Zoran
AU  - Koster, Gertjan
PY  - 2023
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/11631
AB  - Epitaxial integration of transition metal oxides with semiconductors offers various phenomena for novel device applications, specifically bringing ferroelectric, ferromagnetic, electro-optic, photocatalytic, multiferroic, piezoelectric and other properties to the wellestablished silicon platform. A convenient way of integrating functional oxides with Si(001) substrate is through a SrTiO3 (STO) intermediate layer, which can be fabricated on Si(001) in epitaxial form and with high crystallinity using. The epitaxial growth of functional oxides on silicon substrates requires atomically defined surfaces, which are most effectively prepared using SrO- or Sr-induced deoxidation and passivation. As-prepared surfaces enable overgrowth with various oxides for novel device applications. In our work pulsed laser deposition (PLD) was used to integrate oxides with silicon. We showed the ability to prepare highly-ordered sub-monolayer SrO- and Sr-based surface structures, including two-domain (2×3)+(3×2) pattern at 1/6 ML Sr coverage as determined by the reflection high-energy electron diffraction (RHEED) technique. On the passivated silicon surface epitaxial layers of STO was grown by the method of kinetically controlled sequential deposition. Detailed study of initial deposition parameters proved to be extremely important in achieving epitaxial relation of STO with the underlying substrate. On as-prepared pseudo-substrate different functional films were gown for applications in microelectromechanical systems and electrochemical devices.
PB  - Belgrade : Serbian Ceramic Society
C3  - Advanced Ceramics and Application :11th Serbian Ceramic Society Conference : program and the book of abstracts; September 18-20, 2023; Belgrade
T1  - Epitaxial oxides on semiconductors: growth perspectives and device applications
SP  - 32
UR  - https://hdl.handle.net/21.15107/rcub_vinar_11631
ER  - 

@conference{
author = "Spreitzer, Matjaž and Bučar, Lucija and Ho, Hsin-Chia and Trstenjak, Urška and Jovanović, Zoran and Koster, Gertjan",
year = "2023",
abstract = "Epitaxial integration of transition metal oxides with semiconductors offers various phenomena for novel device applications, specifically bringing ferroelectric, ferromagnetic, electro-optic, photocatalytic, multiferroic, piezoelectric and other properties to the wellestablished silicon platform. A convenient way of integrating functional oxides with Si(001) substrate is through a SrTiO3 (STO) intermediate layer, which can be fabricated on Si(001) in epitaxial form and with high crystallinity using. The epitaxial growth of functional oxides on silicon substrates requires atomically defined surfaces, which are most effectively prepared using SrO- or Sr-induced deoxidation and passivation. As-prepared surfaces enable overgrowth with various oxides for novel device applications. In our work pulsed laser deposition (PLD) was used to integrate oxides with silicon. We showed the ability to prepare highly-ordered sub-monolayer SrO- and Sr-based surface structures, including two-domain (2×3)+(3×2) pattern at 1/6 ML Sr coverage as determined by the reflection high-energy electron diffraction (RHEED) technique. On the passivated silicon surface epitaxial layers of STO was grown by the method of kinetically controlled sequential deposition. Detailed study of initial deposition parameters proved to be extremely important in achieving epitaxial relation of STO with the underlying substrate. On as-prepared pseudo-substrate different functional films were gown for applications in microelectromechanical systems and electrochemical devices.",
publisher = "Belgrade : Serbian Ceramic Society",
journal = "Advanced Ceramics and Application :11th Serbian Ceramic Society Conference : program and the book of abstracts; September 18-20, 2023; Belgrade",
title = "Epitaxial oxides on semiconductors: growth perspectives and device applications",
pages = "32",
url = "https://hdl.handle.net/21.15107/rcub_vinar_11631"
}

Spreitzer, M., Bučar, L., Ho, H., Trstenjak, U., Jovanović, Z.,& Koster, G.. (2023). Epitaxial oxides on semiconductors: growth perspectives and device applications. in Advanced Ceramics and Application :11th Serbian Ceramic Society Conference : program and the book of abstracts; September 18-20, 2023; Belgrade
Belgrade : Serbian Ceramic Society., 32.
https://hdl.handle.net/21.15107/rcub_vinar_11631

Spreitzer M, Bučar L, Ho H, Trstenjak U, Jovanović Z, Koster G. Epitaxial oxides on semiconductors: growth perspectives and device applications. in Advanced Ceramics and Application :11th Serbian Ceramic Society Conference : program and the book of abstracts; September 18-20, 2023; Belgrade. 2023;:32.
https://hdl.handle.net/21.15107/rcub_vinar_11631 .

Spreitzer, Matjaž, Bučar, Lucija, Ho, Hsin-Chia, Trstenjak, Urška, Jovanović, Zoran, Koster, Gertjan, "Epitaxial oxides on semiconductors: growth perspectives and device applications" in Advanced Ceramics and Application :11th Serbian Ceramic Society Conference : program and the book of abstracts; September 18-20, 2023; Belgrade (2023):32,
https://hdl.handle.net/21.15107/rcub_vinar_11631 .