Structural, Optical, and Electrical Properties of Applied Amorphized and Polycrystalline Sb2S3 Thin Films
Abstract
One of the intermediate steps in the organo-colloidal synthesis of crystalline Sb2S3 is a synthesis of spherical amorphous Sb2S3. In order to prove that the synthesized semiconductor can be considered an absorbing material for a solar device, the electronic and photovoltage properties of the amorphized and polycrystalline Sb2S3 thin films deposited by synthesized amorphous nanoparticles were studied. Optical studies revealed that the direct band gap energy was 1.65 eV and, two direct allowed transition of 1.57 and 1.91 eV for polycrystalline and amorphized thin films, respectively. The PL spectra of Sb2S3 showed an emission peak at 1.65 eV for both films. In order to obtain current-voltage (I-V) characteristics, two cells based on the Sb2S3 thin films as both an absorbing material and an electrolyte were designed and made. The observed Sb2S3 thin films, with a thickness of around 10 mu m, are of p-type. The exponential growth of the I-V curves reveals that the cells can work as a gener...ator of electricity. (C) The Minerals, Metals and Materials Society and ASM International 2015
Source:
Metallurgical and Materials Transactions. A: Physical Metallurgy and Materials Science, 2016, 47A, 3, 1460-1468Publisher:
- Springer
Funding / projects:
- Size-, shape- and structure- dependent properties of nanoparticles and nanocomposites (RS-MESTD-Basic Research (BR or ON)-172056)
- Magnetic and radionuclide labeled nanostructured materials for medical applications (RS-MESTD-Integrated and Interdisciplinary Research (IIR or III)-45015)
DOI: 10.1007/s11661-015-3282-9
ISSN: 1073-5623; 1543-1940
WoS: 000371308200044
Scopus: 2-s2.0-84957441499
Collections
Institution/Community
VinčaTY - JOUR AU - Janošević, Valentina AU - Mitrić, Miodrag AU - Savić, Jasmina AU - Validžić, Ivana Lj. PY - 2016 UR - https://vinar.vin.bg.ac.rs/handle/123456789/957 AB - One of the intermediate steps in the organo-colloidal synthesis of crystalline Sb2S3 is a synthesis of spherical amorphous Sb2S3. In order to prove that the synthesized semiconductor can be considered an absorbing material for a solar device, the electronic and photovoltage properties of the amorphized and polycrystalline Sb2S3 thin films deposited by synthesized amorphous nanoparticles were studied. Optical studies revealed that the direct band gap energy was 1.65 eV and, two direct allowed transition of 1.57 and 1.91 eV for polycrystalline and amorphized thin films, respectively. The PL spectra of Sb2S3 showed an emission peak at 1.65 eV for both films. In order to obtain current-voltage (I-V) characteristics, two cells based on the Sb2S3 thin films as both an absorbing material and an electrolyte were designed and made. The observed Sb2S3 thin films, with a thickness of around 10 mu m, are of p-type. The exponential growth of the I-V curves reveals that the cells can work as a generator of electricity. (C) The Minerals, Metals and Materials Society and ASM International 2015 PB - Springer T2 - Metallurgical and Materials Transactions. A: Physical Metallurgy and Materials Science T1 - Structural, Optical, and Electrical Properties of Applied Amorphized and Polycrystalline Sb2S3 Thin Films VL - 47A IS - 3 SP - 1460 EP - 1468 DO - 10.1007/s11661-015-3282-9 ER -
@article{ author = "Janošević, Valentina and Mitrić, Miodrag and Savić, Jasmina and Validžić, Ivana Lj.", year = "2016", abstract = "One of the intermediate steps in the organo-colloidal synthesis of crystalline Sb2S3 is a synthesis of spherical amorphous Sb2S3. In order to prove that the synthesized semiconductor can be considered an absorbing material for a solar device, the electronic and photovoltage properties of the amorphized and polycrystalline Sb2S3 thin films deposited by synthesized amorphous nanoparticles were studied. Optical studies revealed that the direct band gap energy was 1.65 eV and, two direct allowed transition of 1.57 and 1.91 eV for polycrystalline and amorphized thin films, respectively. The PL spectra of Sb2S3 showed an emission peak at 1.65 eV for both films. In order to obtain current-voltage (I-V) characteristics, two cells based on the Sb2S3 thin films as both an absorbing material and an electrolyte were designed and made. The observed Sb2S3 thin films, with a thickness of around 10 mu m, are of p-type. The exponential growth of the I-V curves reveals that the cells can work as a generator of electricity. (C) The Minerals, Metals and Materials Society and ASM International 2015", publisher = "Springer", journal = "Metallurgical and Materials Transactions. A: Physical Metallurgy and Materials Science", title = "Structural, Optical, and Electrical Properties of Applied Amorphized and Polycrystalline Sb2S3 Thin Films", volume = "47A", number = "3", pages = "1460-1468", doi = "10.1007/s11661-015-3282-9" }
Janošević, V., Mitrić, M., Savić, J.,& Validžić, I. Lj.. (2016). Structural, Optical, and Electrical Properties of Applied Amorphized and Polycrystalline Sb2S3 Thin Films. in Metallurgical and Materials Transactions. A: Physical Metallurgy and Materials Science Springer., 47A(3), 1460-1468. https://doi.org/10.1007/s11661-015-3282-9
Janošević V, Mitrić M, Savić J, Validžić IL. Structural, Optical, and Electrical Properties of Applied Amorphized and Polycrystalline Sb2S3 Thin Films. in Metallurgical and Materials Transactions. A: Physical Metallurgy and Materials Science. 2016;47A(3):1460-1468. doi:10.1007/s11661-015-3282-9 .
Janošević, Valentina, Mitrić, Miodrag, Savić, Jasmina, Validžić, Ivana Lj., "Structural, Optical, and Electrical Properties of Applied Amorphized and Polycrystalline Sb2S3 Thin Films" in Metallurgical and Materials Transactions. A: Physical Metallurgy and Materials Science, 47A, no. 3 (2016):1460-1468, https://doi.org/10.1007/s11661-015-3282-9 . .