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dc.creatorDaničić, Aleksandar
dc.creatorRadovanović, Jelena V.
dc.creatorRamović, Sabina
dc.creatorMilanović, Vitomir B.
dc.date.accessioned2018-03-01T16:41:01Z
dc.date.available2018-03-01T16:41:01Z
dc.date.issued2016
dc.identifier.issn0022-3727
dc.identifier.issn1361-6463
dc.identifier.urihttps://vinar.vin.bg.ac.rs/handle/123456789/927
dc.description.abstractIn order to avoid losses in metamaterial unit cells at frequencies of interest, caused by metallic inclusions, an active medium design has been proposed. As candidate structures for this active medium, we have chosen quantum cascade lasers because of their high output gain. Here we analyze and compare two quantum cascade structures that emit at 4.6 THz and 3.9 THz, respectively, placed under the influence of a strong magnetic field. We first solve the full system of rate equations for all relevant Landau levels, and obtain the necessary information about carrier distribution among the levels, after which we are able to evaluate the permittivity component along the growth direction of the structure. With these data one can determine the conditions under which negative refraction occurs, and calculate the values of the refractive index of the structure, as well as the range of frequencies at which the structure exhibits negative refraction for a predefined total electron sheet density.en
dc.publisherIOP Publishing Ltd
dc.relationinfo:eu-repo/grantAgreement/MESTD/Integrated and Interdisciplinary Research (IIR or III)/45010/RS//
dc.relationNATO SfP Grant [984068]
dc.rightsopenAccessen
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.sourceJournal of Physics. D: Applied Physicsen
dc.subjectmetamaterialsen
dc.subjectquantum cascade structuresen
dc.subjectmagnetic fielden
dc.titleExploring negative refraction conditions for quantum cascade semiconductor metamaterials in the terahertz spectral rangeen
dc.typearticleen
dc.rights.licenseBY
dcterms.abstractРамовиц, С.; Даничић Aлександар; Радовановиц, Ј.; Милановиц, В.;
dc.citation.volume49
dc.citation.issue8
dc.identifier.wos000369480800014
dc.identifier.doi10.1088/0022-3727/49/8/085105
dc.citation.otherArticle Number: 085105
dc.citation.rankM21
dc.type.versionpublishedVersion
dc.identifier.scopus2-s2.0-84957572430
dc.identifier.fulltexthttps://vinar.vin.bg.ac.rs/bitstream/id/14303/923.pdf


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