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Probing high-energy ion-implanted silicon by micro-Raman spectroscopy
(Journal of Raman Spectroscopy, 2014)
The effect of ion implantation (4MeV(12)C(2+), 5MeV(16)O(2+), and 8MeV(28)Si(2+)) on [110] silicon wafers in channeling and random orientation is investigated by micro-Raman spectroscopy. The profiles were measured using ...
Micro-Raman depth profiling of silicon amorphization induced by high-energy ion channeling implantation
(Journal of Raman Spectroscopy, 2013)
In this work, we study the silicon amorphization dependence on the crystal depth induced by 6-MeV Al2+ ions implanted in the LT 110 GT and randomly oriented silicon crystal channels, which was not directly experimentally ...
Raman mapping of 4‐MeV C and Si channeling implantation of 6H‐SiC
(Journal of Raman Spectroscopy, 2019)
A 6H-SiC single crystal implanted in channeling mode by 4-MeV C+3 and Si+3 ions at various doping levels has been examined by scanning electron microscopy (SEM) and micro-Raman spectroscopy in order to study the lattice ...
Modification of Keggin anion structure with ion beams—A new spectroscopic insights into the effects of keV- and MeV-ion beam irradiation on 12-tungstophosphoric acid
(Journal of Raman Spectroscopy, 2022)
Ion beam irradiation is a versatile tool for structural modification andengineering of new materials. In this study, 12-tungstophosphoric acid (WPA)films of different thickness were spin-coated on platinized silicon substrate ...