Претраживање
Приказ резултата 11-15 од 15
Energy dependence of zero-degree focusing of channeled ions
(Radiation Effects and Defects in Solids, 1997)
We analyze here the energy dependence of the effect of zero-degree focusing of Ne10+ ions transmitted through the [100] channels of a Si crystal. The thickness of the crystal is 1 mu m and the ion energy is varied from 1.0 ...
Doughnuts with a 〈110〉 very thin Si crystal
(Journal of Electron Spectroscopy and Related Phenomena, 2003)
This study is devoted to the angular distributions and transmission patterns of 10 MeV protons channeled in a tilted LT 110 GT very thin Si crystal of thickness 100 nm. The tilt angle of the crystal is varied from zero up ...
Energy loss of ions channeled in a thin crystal
(Radiation Effects and Defects in Solids, 1997)
The energy loss distributions of Ne10+ ions channeled in a [100] Si thin crystal are considered. The thickness of the crystal is 500 nm (921 atomic layers), while the ion energy is varied from 1 to 35 MeV per nucleon. The ...
Rainbow effect in channeling of high energy protons in (10,0) single-wall carbon nanotubes
(Materials Science Forum, 2005)
We investigate theoretically the angular distributions and the rainbows of 1 GeV protons channeled in the ropes of (10, 0) single-wall carbon nanotubes. The rope length is varied between 0.53 and 5.29 mu m. The angular ...
Raman mapping of 4‐MeV C and Si channeling implantation of 6H‐SiC
(Journal of Raman Spectroscopy, 2019)
A 6H-SiC single crystal implanted in channeling mode by 4-MeV C+3 and Si+3 ions at various doping levels has been examined by scanning electron microscopy (SEM) and micro-Raman spectroscopy in order to study the lattice ...