Raman mapping of 4‐MeV C and Si channeling implantation of 6H‐SiC
Само за регистроване кориснике
2019
Аутори
Flessa, AikateriniNtemou, Eleni
Kokkoris, Michael
Liarokapis, Efthymios
Gloginjić, Marko
Petrović, Srđan M.
Erich, Marko
Fazinić, Stjepko
Karlušić, Marko
Tomić, Kristina
Чланак у часопису (Објављена верзија)
,
© 2019 John Wiley & Sons, Ltd
Метаподаци
Приказ свих података о документуАпстракт
A 6H-SiC single crystal implanted in channeling mode by 4-MeV C+3 and Si+3 ions at various doping levels has been examined by scanning electron microscopy (SEM) and micro-Raman spectroscopy in order to study the lattice distortions inflicted by the impinging ions. C ions create zones of strongly damaged regions, parallel to the front face of the wafer with width increasing with the amount of doping. As expected, Si has induced considerably more lattice distortions than C, and more than one order of magnitude less doping induces apparently the same effect as C. Despite the large laser spot size compared with the boundaries of the distorted regions, micro-Raman data provided results agreeing with the SEM pictures and the Monte Carlo calculations using the SRIM-2013 software. From the evolution of the crystalline peaks in the Raman spectra obtained across the damaged area, one can conclude that the impinging ions do not accommodate as defects in the lattice but mostly displace the ions br...eaking the bonds and destroying the long range order. The spatial correlation model that takes into consideration the intensity variation at the laser spot and the anticipated from Monte Carlo calculations for the collision events can reproduce the trend of the strong transversal optical phonon width indicating nanocrystallites of a few nanometers size in the most damaged area. © 2019 John Wiley & Sons, Ltd.
Кључне речи:
channeling / disorder profile / ion implantation / phonon confinement / silicon carbideИзвор:
Journal of Raman Spectroscopy, 2019, 50, 8, 1186-1196Финансирање / пројекти:
- AIDA-2020 - Advanced European Infrastructures for Detectors at Accelerators (EU-H2020-654168)
- Hrvatska Zaklada za Znanost [MIOBICC (8127)]
- European Regional Development Fund [KK.01.1.1.01.0001]
DOI: 10.1002/jrs.5629
ISSN: 0377-0486
WoS: 000479243700015
Scopus: 2-s2.0-85070443908
Институција/група
VinčaTY - JOUR AU - Flessa, Aikaterini AU - Ntemou, Eleni AU - Kokkoris, Michael AU - Liarokapis, Efthymios AU - Gloginjić, Marko AU - Petrović, Srđan M. AU - Erich, Marko AU - Fazinić, Stjepko AU - Karlušić, Marko AU - Tomić, Kristina PY - 2019 UR - https://vinar.vin.bg.ac.rs/handle/123456789/8439 AB - A 6H-SiC single crystal implanted in channeling mode by 4-MeV C+3 and Si+3 ions at various doping levels has been examined by scanning electron microscopy (SEM) and micro-Raman spectroscopy in order to study the lattice distortions inflicted by the impinging ions. C ions create zones of strongly damaged regions, parallel to the front face of the wafer with width increasing with the amount of doping. As expected, Si has induced considerably more lattice distortions than C, and more than one order of magnitude less doping induces apparently the same effect as C. Despite the large laser spot size compared with the boundaries of the distorted regions, micro-Raman data provided results agreeing with the SEM pictures and the Monte Carlo calculations using the SRIM-2013 software. From the evolution of the crystalline peaks in the Raman spectra obtained across the damaged area, one can conclude that the impinging ions do not accommodate as defects in the lattice but mostly displace the ions breaking the bonds and destroying the long range order. The spatial correlation model that takes into consideration the intensity variation at the laser spot and the anticipated from Monte Carlo calculations for the collision events can reproduce the trend of the strong transversal optical phonon width indicating nanocrystallites of a few nanometers size in the most damaged area. © 2019 John Wiley & Sons, Ltd. T2 - Journal of Raman Spectroscopy T1 - Raman mapping of 4‐MeV C and Si channeling implantation of 6H‐SiC VL - 50 IS - 8 SP - 1186 EP - 1196 DO - 10.1002/jrs.5629 ER -
@article{ author = "Flessa, Aikaterini and Ntemou, Eleni and Kokkoris, Michael and Liarokapis, Efthymios and Gloginjić, Marko and Petrović, Srđan M. and Erich, Marko and Fazinić, Stjepko and Karlušić, Marko and Tomić, Kristina", year = "2019", abstract = "A 6H-SiC single crystal implanted in channeling mode by 4-MeV C+3 and Si+3 ions at various doping levels has been examined by scanning electron microscopy (SEM) and micro-Raman spectroscopy in order to study the lattice distortions inflicted by the impinging ions. C ions create zones of strongly damaged regions, parallel to the front face of the wafer with width increasing with the amount of doping. As expected, Si has induced considerably more lattice distortions than C, and more than one order of magnitude less doping induces apparently the same effect as C. Despite the large laser spot size compared with the boundaries of the distorted regions, micro-Raman data provided results agreeing with the SEM pictures and the Monte Carlo calculations using the SRIM-2013 software. From the evolution of the crystalline peaks in the Raman spectra obtained across the damaged area, one can conclude that the impinging ions do not accommodate as defects in the lattice but mostly displace the ions breaking the bonds and destroying the long range order. The spatial correlation model that takes into consideration the intensity variation at the laser spot and the anticipated from Monte Carlo calculations for the collision events can reproduce the trend of the strong transversal optical phonon width indicating nanocrystallites of a few nanometers size in the most damaged area. © 2019 John Wiley & Sons, Ltd.", journal = "Journal of Raman Spectroscopy", title = "Raman mapping of 4‐MeV C and Si channeling implantation of 6H‐SiC", volume = "50", number = "8", pages = "1186-1196", doi = "10.1002/jrs.5629" }
Flessa, A., Ntemou, E., Kokkoris, M., Liarokapis, E., Gloginjić, M., Petrović, S. M., Erich, M., Fazinić, S., Karlušić, M.,& Tomić, K.. (2019). Raman mapping of 4‐MeV C and Si channeling implantation of 6H‐SiC. in Journal of Raman Spectroscopy, 50(8), 1186-1196. https://doi.org/10.1002/jrs.5629
Flessa A, Ntemou E, Kokkoris M, Liarokapis E, Gloginjić M, Petrović SM, Erich M, Fazinić S, Karlušić M, Tomić K. Raman mapping of 4‐MeV C and Si channeling implantation of 6H‐SiC. in Journal of Raman Spectroscopy. 2019;50(8):1186-1196. doi:10.1002/jrs.5629 .
Flessa, Aikaterini, Ntemou, Eleni, Kokkoris, Michael, Liarokapis, Efthymios, Gloginjić, Marko, Petrović, Srđan M., Erich, Marko, Fazinić, Stjepko, Karlušić, Marko, Tomić, Kristina, "Raman mapping of 4‐MeV C and Si channeling implantation of 6H‐SiC" in Journal of Raman Spectroscopy, 50, no. 8 (2019):1186-1196, https://doi.org/10.1002/jrs.5629 . .