Argon ions deeply implanted in silicon studied by Rutherford/Elastic Backscattering and Grazing Incidence X-ray Fluorescence spectroscopy
Само за регистроване кориснике
2019
Аутори
Kokkoris, MichaelAndroulakaki, Effrossyni G.
Czyzycki, Mateusz
Erich, Marko
Karydas, Andreas G.
Leani, Juan J.
Migliori, Alessandro
Ntemou, Eleni
Paneta, Valentina
Petrović, Srđan M.
Конференцијски прилог (Објављена верзија)
,
© 2018 Elsevier B.V.
Метаподаци
Приказ свих података о документуАпстракт
Synchrotron-radiation based techniques have recently emerged as serious competitors to traditional nuclear analytical ones, not only in the characterization of various materials, but also when the depth profiling of ultra-thin surface layers is concerned. The main goal of the present work was to investigate the applicability of Grazing Incidence X-Ray Fluorescence (GIXRF) and Rutherford/Elastic Backscattering Spectrometry (RBS/EBS) techniques with respect to the accurate quantitative determination of the retained doses of Ar ions deep implanted in random direction of Si [1 1 1] polished crystalline wafers. RBS/EBS measurements with protons and deuterons were taken along with GIXRF ones, the results were compared and an attempt was made to explain the occurring similarities and differences, along with the advantages and weaknesses of each applied analytical technique.
Кључне речи:
EBS/RBS / GIXRF / Synchrotron radiation / Depth profilingИзвор:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2019, 450, 144-148Финансирање / пројекти:
- IAEA CRP-G42005 'Experiments with Synchrotron Radiation for Modern Environmental and Industrial Applications [18262]
Напомена:
- 23rd International Conference on Ion Beam Analysis (IBA) (2017; Shanghai)
DOI: 10.1016/j.nimb.2018.08.048
ISSN: 0168-583X; 1872-9584
WoS: 000474501400030
Scopus: 2-s2.0-85053018989
Институција/група
VinčaTY - CONF AU - Kokkoris, Michael AU - Androulakaki, Effrossyni G. AU - Czyzycki, Mateusz AU - Erich, Marko AU - Karydas, Andreas G. AU - Leani, Juan J. AU - Migliori, Alessandro AU - Ntemou, Eleni AU - Paneta, Valentina AU - Petrović, Srđan M. PY - 2019 UR - https://vinar.vin.bg.ac.rs/handle/123456789/8396 AB - Synchrotron-radiation based techniques have recently emerged as serious competitors to traditional nuclear analytical ones, not only in the characterization of various materials, but also when the depth profiling of ultra-thin surface layers is concerned. The main goal of the present work was to investigate the applicability of Grazing Incidence X-Ray Fluorescence (GIXRF) and Rutherford/Elastic Backscattering Spectrometry (RBS/EBS) techniques with respect to the accurate quantitative determination of the retained doses of Ar ions deep implanted in random direction of Si [1 1 1] polished crystalline wafers. RBS/EBS measurements with protons and deuterons were taken along with GIXRF ones, the results were compared and an attempt was made to explain the occurring similarities and differences, along with the advantages and weaknesses of each applied analytical technique. C3 - Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms T1 - Argon ions deeply implanted in silicon studied by Rutherford/Elastic Backscattering and Grazing Incidence X-ray Fluorescence spectroscopy VL - 450 SP - 144 EP - 148 DO - 10.1016/j.nimb.2018.08.048 ER -
@conference{ author = "Kokkoris, Michael and Androulakaki, Effrossyni G. and Czyzycki, Mateusz and Erich, Marko and Karydas, Andreas G. and Leani, Juan J. and Migliori, Alessandro and Ntemou, Eleni and Paneta, Valentina and Petrović, Srđan M.", year = "2019", abstract = "Synchrotron-radiation based techniques have recently emerged as serious competitors to traditional nuclear analytical ones, not only in the characterization of various materials, but also when the depth profiling of ultra-thin surface layers is concerned. The main goal of the present work was to investigate the applicability of Grazing Incidence X-Ray Fluorescence (GIXRF) and Rutherford/Elastic Backscattering Spectrometry (RBS/EBS) techniques with respect to the accurate quantitative determination of the retained doses of Ar ions deep implanted in random direction of Si [1 1 1] polished crystalline wafers. RBS/EBS measurements with protons and deuterons were taken along with GIXRF ones, the results were compared and an attempt was made to explain the occurring similarities and differences, along with the advantages and weaknesses of each applied analytical technique.", journal = "Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms", title = "Argon ions deeply implanted in silicon studied by Rutherford/Elastic Backscattering and Grazing Incidence X-ray Fluorescence spectroscopy", volume = "450", pages = "144-148", doi = "10.1016/j.nimb.2018.08.048" }
Kokkoris, M., Androulakaki, E. G., Czyzycki, M., Erich, M., Karydas, A. G., Leani, J. J., Migliori, A., Ntemou, E., Paneta, V.,& Petrović, S. M.. (2019). Argon ions deeply implanted in silicon studied by Rutherford/Elastic Backscattering and Grazing Incidence X-ray Fluorescence spectroscopy. in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 450, 144-148. https://doi.org/10.1016/j.nimb.2018.08.048
Kokkoris M, Androulakaki EG, Czyzycki M, Erich M, Karydas AG, Leani JJ, Migliori A, Ntemou E, Paneta V, Petrović SM. Argon ions deeply implanted in silicon studied by Rutherford/Elastic Backscattering and Grazing Incidence X-ray Fluorescence spectroscopy. in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 2019;450:144-148. doi:10.1016/j.nimb.2018.08.048 .
Kokkoris, Michael, Androulakaki, Effrossyni G., Czyzycki, Mateusz, Erich, Marko, Karydas, Andreas G., Leani, Juan J., Migliori, Alessandro, Ntemou, Eleni, Paneta, Valentina, Petrović, Srđan M., "Argon ions deeply implanted in silicon studied by Rutherford/Elastic Backscattering and Grazing Incidence X-ray Fluorescence spectroscopy" in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 450 (2019):144-148, https://doi.org/10.1016/j.nimb.2018.08.048 . .