Ion implanted silicides studies by frequency noise level measurements

Abstract

Silicides belong to a very promising group of materials which are of great interest both in the physics of thin films and in microelectronics. Their low resistivity and good temperature stability are used for fabrication of reliable and reproducible contacts. Investigations of this type of contacts include both their experimental development and the development of methods for their characterization. Noise level measurements are one of the most sensitive methods for the evaluation of the quality of obtained silicides for contacts on the semiconductors. This method is directly oriented on the electrical noise, and, therefore are more advantageous than other methods for silicide characterization. This paper presents the study of arsenic ion implantation and sequential thermal annealing effects on the frequency noise level characteristics of TiN/Ti and Pd contacts on Si.