High dose ion irradiation effects on immiscible AlN/TiN nano-scaled multilayers
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Milosavljević, MomirObradović, Marko O.
Grce, Ana
Peruško, Davor
Pjević, Dejan J.
Kovač, Janez
Dražić, Goran
Jeynes, Chris
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The effects of high dose Ar ion irradiation on immiscible AlN/TiN multilayered structures were studied. The structures with 30 alternate layers of a total thickness of similar to 260 nm were deposited by reactive sputtering on (100) Si wafers. Individual layer thickness was similar to 8 nm AlN and similar to 9.3 nm TiN. Irradiation was done with 180 keV Ar+ ions to 1x10(16)-8x10(16) ions/cm(2), with the projected range around mid-depth of the structures. It was found that the highest applied dose induced a considerable intermixing, where the growing TiN grains consume the adjacent AlN layers, transforming partly to (TiAl)N phase. Intermixing occurs due to a high contribution of collision cascades, which was not compensated in demixing by chemical driving forces. However, a multilayered structure with relatively flat surface and interfaces is still preserved, with measured nano-hardness value above the level for the as-deposited sample. The results are compared to other systems and disc...ussed in the light of the existing ion beam mixing models. They can be interesting towards better understanding of the processes involved and to development of radiation tolerant coatings. (C) 2013 Elsevier B.V. All rights reserved.
Keywords:
AlN/TiN multilayers / Interfaces / Ion irradiation / Radiation tolerance / Ion beam / Mixing / Nano-hardnessSource:
Thin Solid Films, 2013, 544, 562-566Funding / projects:
- Physical processes in the synthesis of advanced nanostructured materials (RS-MESTD-Basic Research (BR or ON)-171023)
- SPIRIT - Support of Public and Industrial Research using Ion Beam Technology (EU-FP7-227012)
- Slovenian Research Agency [P2-0082], IAEA, Vienna
Note:
- International Conference on Technological Advances of Thin Films and Surface Coatings, Jul 15-17, 2012, Singapore, Singapore
DOI: 10.1016/j.tsf.2012.12.068
ISSN: 0040-6090
WoS: 000324309100109
Scopus: 2-s2.0-84901835519
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VinčaTY - JOUR AU - Milosavljević, Momir AU - Obradović, Marko O. AU - Grce, Ana AU - Peruško, Davor AU - Pjević, Dejan J. AU - Kovač, Janez AU - Dražić, Goran AU - Jeynes, Chris PY - 2013 UR - https://vinar.vin.bg.ac.rs/handle/123456789/7006 AB - The effects of high dose Ar ion irradiation on immiscible AlN/TiN multilayered structures were studied. The structures with 30 alternate layers of a total thickness of similar to 260 nm were deposited by reactive sputtering on (100) Si wafers. Individual layer thickness was similar to 8 nm AlN and similar to 9.3 nm TiN. Irradiation was done with 180 keV Ar+ ions to 1x10(16)-8x10(16) ions/cm(2), with the projected range around mid-depth of the structures. It was found that the highest applied dose induced a considerable intermixing, where the growing TiN grains consume the adjacent AlN layers, transforming partly to (TiAl)N phase. Intermixing occurs due to a high contribution of collision cascades, which was not compensated in demixing by chemical driving forces. However, a multilayered structure with relatively flat surface and interfaces is still preserved, with measured nano-hardness value above the level for the as-deposited sample. The results are compared to other systems and discussed in the light of the existing ion beam mixing models. They can be interesting towards better understanding of the processes involved and to development of radiation tolerant coatings. (C) 2013 Elsevier B.V. All rights reserved. T2 - Thin Solid Films T1 - High dose ion irradiation effects on immiscible AlN/TiN nano-scaled multilayers VL - 544 SP - 562 EP - 566 DO - 10.1016/j.tsf.2012.12.068 ER -
@article{ author = "Milosavljević, Momir and Obradović, Marko O. and Grce, Ana and Peruško, Davor and Pjević, Dejan J. and Kovač, Janez and Dražić, Goran and Jeynes, Chris", year = "2013", abstract = "The effects of high dose Ar ion irradiation on immiscible AlN/TiN multilayered structures were studied. The structures with 30 alternate layers of a total thickness of similar to 260 nm were deposited by reactive sputtering on (100) Si wafers. Individual layer thickness was similar to 8 nm AlN and similar to 9.3 nm TiN. Irradiation was done with 180 keV Ar+ ions to 1x10(16)-8x10(16) ions/cm(2), with the projected range around mid-depth of the structures. It was found that the highest applied dose induced a considerable intermixing, where the growing TiN grains consume the adjacent AlN layers, transforming partly to (TiAl)N phase. Intermixing occurs due to a high contribution of collision cascades, which was not compensated in demixing by chemical driving forces. However, a multilayered structure with relatively flat surface and interfaces is still preserved, with measured nano-hardness value above the level for the as-deposited sample. The results are compared to other systems and discussed in the light of the existing ion beam mixing models. They can be interesting towards better understanding of the processes involved and to development of radiation tolerant coatings. (C) 2013 Elsevier B.V. All rights reserved.", journal = "Thin Solid Films", title = "High dose ion irradiation effects on immiscible AlN/TiN nano-scaled multilayers", volume = "544", pages = "562-566", doi = "10.1016/j.tsf.2012.12.068" }
Milosavljević, M., Obradović, M. O., Grce, A., Peruško, D., Pjević, D. J., Kovač, J., Dražić, G.,& Jeynes, C.. (2013). High dose ion irradiation effects on immiscible AlN/TiN nano-scaled multilayers. in Thin Solid Films, 544, 562-566. https://doi.org/10.1016/j.tsf.2012.12.068
Milosavljević M, Obradović MO, Grce A, Peruško D, Pjević DJ, Kovač J, Dražić G, Jeynes C. High dose ion irradiation effects on immiscible AlN/TiN nano-scaled multilayers. in Thin Solid Films. 2013;544:562-566. doi:10.1016/j.tsf.2012.12.068 .
Milosavljević, Momir, Obradović, Marko O., Grce, Ana, Peruško, Davor, Pjević, Dejan J., Kovač, Janez, Dražić, Goran, Jeynes, Chris, "High dose ion irradiation effects on immiscible AlN/TiN nano-scaled multilayers" in Thin Solid Films, 544 (2013):562-566, https://doi.org/10.1016/j.tsf.2012.12.068 . .