Ion beam modification of structural and electrical properties of TiN thin films
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2008
Authors
Popović, MajaStojanović, Milan
Peruško, Davor
Novaković, Mirjana M.
Radović, Ivan
Milinović, Velimir
Timotijević, B.
Mitrić, Miodrag
Milosavljević, Momir
Article (Published version)
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A study of ion beam modification of structural and electrical properties of TiN thin films is presented. The layers were deposited by reactive ion sputtering on (100) Si and glass slide substrates to a thickness of similar to 240 nm. After deposition the structures were implanted with argon ions at 120 keV, to the fluences from 1 x 10(15) to 1 x 10(16) ions/cm(2). The ion energy was chosen to give the projected ion range within the deposited layers, to minimize the influence of the substrate on the induced structural changes. Structural analysis of the samples was performed by cross-sectional transmission electron microscopy, X-ray diffraction and Rutherford backscattering spectrometry. Electrical characterization included sheet resistivity measurements with a four point probe. It was found that the as-deposited layers have columnar structure, individual columns stretching from the substrate to the surface and being a few tens of nanometers wide.Ion irradiation rearranges their crystal...line structure, which remains polycrystalline, but the columns are broken, and nanocrystals of the same phase are formed. The structural changes can be nicely correlated to the measured electrical resistivity. (C) 2008 Elsevier B.V. All rights reserved.
Keywords:
hard coatings / ion beam modification / TiN / RBS / TEMSource:
Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 2008, 266, 10, 2507-2510Funding / projects:
- Modifikacija, sinteza i analiza nanostrukturnih materijala jonskim snopovima, gama zračenjem i vakuumskim deponovanjem (RS-MESTD-MPN2006-2010-141013)
Note:
- 9th European Conference on Accelerators in Applied Research and Technology, Sep 03-07, 2007, Florence, Italy
DOI: 10.1016/j.nimb.2008.03.032
ISSN: 0168-583X
WoS: 000257185600094
Scopus: 2-s2.0-44649108220
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VinčaTY - JOUR AU - Popović, Maja AU - Stojanović, Milan AU - Peruško, Davor AU - Novaković, Mirjana M. AU - Radović, Ivan AU - Milinović, Velimir AU - Timotijević, B. AU - Mitrić, Miodrag AU - Milosavljević, Momir PY - 2008 UR - https://vinar.vin.bg.ac.rs/handle/123456789/6769 AB - A study of ion beam modification of structural and electrical properties of TiN thin films is presented. The layers were deposited by reactive ion sputtering on (100) Si and glass slide substrates to a thickness of similar to 240 nm. After deposition the structures were implanted with argon ions at 120 keV, to the fluences from 1 x 10(15) to 1 x 10(16) ions/cm(2). The ion energy was chosen to give the projected ion range within the deposited layers, to minimize the influence of the substrate on the induced structural changes. Structural analysis of the samples was performed by cross-sectional transmission electron microscopy, X-ray diffraction and Rutherford backscattering spectrometry. Electrical characterization included sheet resistivity measurements with a four point probe. It was found that the as-deposited layers have columnar structure, individual columns stretching from the substrate to the surface and being a few tens of nanometers wide.Ion irradiation rearranges their crystalline structure, which remains polycrystalline, but the columns are broken, and nanocrystals of the same phase are formed. The structural changes can be nicely correlated to the measured electrical resistivity. (C) 2008 Elsevier B.V. All rights reserved. T2 - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms T1 - Ion beam modification of structural and electrical properties of TiN thin films VL - 266 IS - 10 SP - 2507 EP - 2510 DO - 10.1016/j.nimb.2008.03.032 ER -
@article{ author = "Popović, Maja and Stojanović, Milan and Peruško, Davor and Novaković, Mirjana M. and Radović, Ivan and Milinović, Velimir and Timotijević, B. and Mitrić, Miodrag and Milosavljević, Momir", year = "2008", abstract = "A study of ion beam modification of structural and electrical properties of TiN thin films is presented. The layers were deposited by reactive ion sputtering on (100) Si and glass slide substrates to a thickness of similar to 240 nm. After deposition the structures were implanted with argon ions at 120 keV, to the fluences from 1 x 10(15) to 1 x 10(16) ions/cm(2). The ion energy was chosen to give the projected ion range within the deposited layers, to minimize the influence of the substrate on the induced structural changes. Structural analysis of the samples was performed by cross-sectional transmission electron microscopy, X-ray diffraction and Rutherford backscattering spectrometry. Electrical characterization included sheet resistivity measurements with a four point probe. It was found that the as-deposited layers have columnar structure, individual columns stretching from the substrate to the surface and being a few tens of nanometers wide.Ion irradiation rearranges their crystalline structure, which remains polycrystalline, but the columns are broken, and nanocrystals of the same phase are formed. The structural changes can be nicely correlated to the measured electrical resistivity. (C) 2008 Elsevier B.V. All rights reserved.", journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms", title = "Ion beam modification of structural and electrical properties of TiN thin films", volume = "266", number = "10", pages = "2507-2510", doi = "10.1016/j.nimb.2008.03.032" }
Popović, M., Stojanović, M., Peruško, D., Novaković, M. M., Radović, I., Milinović, V., Timotijević, B., Mitrić, M.,& Milosavljević, M.. (2008). Ion beam modification of structural and electrical properties of TiN thin films. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 266(10), 2507-2510. https://doi.org/10.1016/j.nimb.2008.03.032
Popović M, Stojanović M, Peruško D, Novaković MM, Radović I, Milinović V, Timotijević B, Mitrić M, Milosavljević M. Ion beam modification of structural and electrical properties of TiN thin films. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2008;266(10):2507-2510. doi:10.1016/j.nimb.2008.03.032 .
Popović, Maja, Stojanović, Milan, Peruško, Davor, Novaković, Mirjana M., Radović, Ivan, Milinović, Velimir, Timotijević, B., Mitrić, Miodrag, Milosavljević, Momir, "Ion beam modification of structural and electrical properties of TiN thin films" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 266, no. 10 (2008):2507-2510, https://doi.org/10.1016/j.nimb.2008.03.032 . .