Xenon-ion irradiation of Co/Si bilayers: Effects of interface structure and ion energy
Nema prikaza
Autori
Bibić, Nataša M.Lieb, K. P.
Milinović, Velimir
Mitrić, Miodrag
Šiljegović, Milorad
Zhang, Kun
Članak u časopisu
Metapodaci
Prikaz svih podataka o dokumentuApstrakt
Heavy-ion irradiation of ferromagnetic thin layers changes their micromagnetic and microstructural properties, due to the production of defects, relaxation or build-up of stress, or changes of grain size. When the ion range exceeds the layer thickness, ion mixing processes take place, leading to the formation of silicide phases. The present study deals with CO(30 or 55 nm)/Si bilayers irradiated at room temperature with 100- or 200 keV Xe ions to fluences of up to 15 x 10(15)/cm(2). The Si(100) wafers were either crystalline or pre-amorphized by 1 keV Ar+ implantation. Rutherford backscattering spectroscopy, in-plane magneto-optical Kerr effect, and X-ray diffraction served to analyse the samples before and after irradiation. The results will be compared with those obtained for other heavy-ions for Co/Si bilayers and in similar studies on Fe/Si bilayers. (C) 2008 Elsevier B.V. All rights reserved.
Ključne reči:
ion beam mixing / cobalt films / cobalt silicides / micromagnetismIzvor:
Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 2008, 266, 10, 2498-2502Napomena:
- 9th European Conference on Accelerators in Applied Research and Technology, Sep 03-07, 2007, Florence, Italy
DOI: 10.1016/j.nimb.2008.03.033
ISSN: 0168-583X
WoS: 000257185600092
Scopus: 2-s2.0-44649145166
Kolekcije
Institucija/grupa
VinčaTY - JOUR AU - Bibić, Nataša M. AU - Lieb, K. P. AU - Milinović, Velimir AU - Mitrić, Miodrag AU - Šiljegović, Milorad AU - Zhang, Kun PY - 2008 UR - https://vinar.vin.bg.ac.rs/handle/123456789/6767 AB - Heavy-ion irradiation of ferromagnetic thin layers changes their micromagnetic and microstructural properties, due to the production of defects, relaxation or build-up of stress, or changes of grain size. When the ion range exceeds the layer thickness, ion mixing processes take place, leading to the formation of silicide phases. The present study deals with CO(30 or 55 nm)/Si bilayers irradiated at room temperature with 100- or 200 keV Xe ions to fluences of up to 15 x 10(15)/cm(2). The Si(100) wafers were either crystalline or pre-amorphized by 1 keV Ar+ implantation. Rutherford backscattering spectroscopy, in-plane magneto-optical Kerr effect, and X-ray diffraction served to analyse the samples before and after irradiation. The results will be compared with those obtained for other heavy-ions for Co/Si bilayers and in similar studies on Fe/Si bilayers. (C) 2008 Elsevier B.V. All rights reserved. T2 - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms T1 - Xenon-ion irradiation of Co/Si bilayers: Effects of interface structure and ion energy VL - 266 IS - 10 SP - 2498 EP - 2502 DO - 10.1016/j.nimb.2008.03.033 ER -
@article{ author = "Bibić, Nataša M. and Lieb, K. P. and Milinović, Velimir and Mitrić, Miodrag and Šiljegović, Milorad and Zhang, Kun", year = "2008", abstract = "Heavy-ion irradiation of ferromagnetic thin layers changes their micromagnetic and microstructural properties, due to the production of defects, relaxation or build-up of stress, or changes of grain size. When the ion range exceeds the layer thickness, ion mixing processes take place, leading to the formation of silicide phases. The present study deals with CO(30 or 55 nm)/Si bilayers irradiated at room temperature with 100- or 200 keV Xe ions to fluences of up to 15 x 10(15)/cm(2). The Si(100) wafers were either crystalline or pre-amorphized by 1 keV Ar+ implantation. Rutherford backscattering spectroscopy, in-plane magneto-optical Kerr effect, and X-ray diffraction served to analyse the samples before and after irradiation. The results will be compared with those obtained for other heavy-ions for Co/Si bilayers and in similar studies on Fe/Si bilayers. (C) 2008 Elsevier B.V. All rights reserved.", journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms", title = "Xenon-ion irradiation of Co/Si bilayers: Effects of interface structure and ion energy", volume = "266", number = "10", pages = "2498-2502", doi = "10.1016/j.nimb.2008.03.033" }
Bibić, N. M., Lieb, K. P., Milinović, V., Mitrić, M., Šiljegović, M.,& Zhang, K.. (2008). Xenon-ion irradiation of Co/Si bilayers: Effects of interface structure and ion energy. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 266(10), 2498-2502. https://doi.org/10.1016/j.nimb.2008.03.033
Bibić NM, Lieb KP, Milinović V, Mitrić M, Šiljegović M, Zhang K. Xenon-ion irradiation of Co/Si bilayers: Effects of interface structure and ion energy. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2008;266(10):2498-2502. doi:10.1016/j.nimb.2008.03.033 .
Bibić, Nataša M., Lieb, K. P., Milinović, Velimir, Mitrić, Miodrag, Šiljegović, Milorad, Zhang, Kun, "Xenon-ion irradiation of Co/Si bilayers: Effects of interface structure and ion energy" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 266, no. 10 (2008):2498-2502, https://doi.org/10.1016/j.nimb.2008.03.033 . .