Electrical and optical characteristics of Ta2O5 thin films deposited by electron-beam vapor deposition

Abstract

Ta2O5 is a material with good perspectives for many applications in modern electronics and information technologies. Several deposition techniques of thin Ta2O5 films have been suggested. Reliable information is still needed, however, on structural, electrical and optical parameters of the films, and their dependence on the deposition technique. We have deposited Ta2O5 thin films by electron-beam evaporation of Ta2O5 powder onto Si, tantalum and glass substrates. The resistivity of the films with various thicknesses was measured by four-point probe method before and after annealing in an oxygen atmosphere. The reflectance in the IR region depending on the substrate and film thickness was shown.