Приказ основних података о документу

Evaluating of MODFET gate capacitance and current gain cutoff frequency

dc.creatorŠašić, Rajko
dc.creatorČevizović, Dalibor
dc.creatorGalović, Slobodanka
dc.creatorRamovic, R
dc.date.accessioned2018-03-03T14:05:29Z
dc.date.available2018-03-03T14:05:29Z
dc.date.issued2004
dc.identifier.issn2159-1660
dc.identifier.urihttps://vinar.vin.bg.ac.rs/handle/123456789/6453
dc.description.abstractIn this paper, new analytical expressions have been derived setting the relation among channel carrier capacitance C(2D), sheet density carriers n(s), gate bias v(G), intrinsic parameters of semiconductor layers, and devices geometry. The dependence of both, n(s) and c(2D) on inverse gate polarisation has been compared with literature values. The influence of donor doping concentration N(D) to characteristics n(s) (v(G)) and c(2D)(v(G)) has been investigated by the suggested analytical model. Also, the current-gain cutoff frequency f(t) has been calculated for a short channel MODFET. The discrepancy between the calculated f(t) and literature value has been discussed.en
dc.rightsrestrictedAccessen
dc.titleEvaluating of MODFET gate capacitance and current gain cutoff frequencyen
dc.typeconferenceObjecten
dcterms.abstractРамовиц, Р; Сасиц, Р; Галовић Слободанка; Цевизовић Далибор;
dc.citation.spage311
dc.citation.epage314
dc.identifier.wos000222219300061
dc.description.otherInternational Conference on Microelectronics-MIEL, 24th International Conference on Microelectronics (MIEL 2004), May 16-19, 2004, Nis, Serbiaen
dc.identifier.rcubhttps://hdl.handle.net/21.15107/rcub_vinar_6453


Документи

ДатотекеВеличинаФорматПреглед

Уз овај запис нема датотека.

Овај документ се појављује у следећим колекцијама

Приказ основних података о документу