Evaluating of MODFET gate capacitance and current gain cutoff frequency
Апстракт
In this paper, new analytical expressions have been derived setting the relation among channel carrier capacitance C(2D), sheet density carriers n(s), gate bias v(G), intrinsic parameters of semiconductor layers, and devices geometry. The dependence of both, n(s) and c(2D) on inverse gate polarisation has been compared with literature values. The influence of donor doping concentration N(D) to characteristics n(s) (v(G)) and c(2D)(v(G)) has been investigated by the suggested analytical model. Also, the current-gain cutoff frequency f(t) has been calculated for a short channel MODFET. The discrepancy between the calculated f(t) and literature value has been discussed.
Извор:
2004, 311-314Напомена:
- International Conference on Microelectronics-MIEL, 24th International Conference on Microelectronics (MIEL 2004), May 16-19, 2004, Nis, Serbia
Колекције
Институција/група
VinčaTY - CONF AU - Šašić, Rajko AU - Čevizović, Dalibor AU - Galović, Slobodanka AU - Ramovic, R PY - 2004 UR - https://vinar.vin.bg.ac.rs/handle/123456789/6453 AB - In this paper, new analytical expressions have been derived setting the relation among channel carrier capacitance C(2D), sheet density carriers n(s), gate bias v(G), intrinsic parameters of semiconductor layers, and devices geometry. The dependence of both, n(s) and c(2D) on inverse gate polarisation has been compared with literature values. The influence of donor doping concentration N(D) to characteristics n(s) (v(G)) and c(2D)(v(G)) has been investigated by the suggested analytical model. Also, the current-gain cutoff frequency f(t) has been calculated for a short channel MODFET. The discrepancy between the calculated f(t) and literature value has been discussed. T1 - Evaluating of MODFET gate capacitance and current gain cutoff frequency SP - 311 EP - 314 UR - https://hdl.handle.net/21.15107/rcub_vinar_6453 ER -
@conference{ author = "Šašić, Rajko and Čevizović, Dalibor and Galović, Slobodanka and Ramovic, R", year = "2004", abstract = "In this paper, new analytical expressions have been derived setting the relation among channel carrier capacitance C(2D), sheet density carriers n(s), gate bias v(G), intrinsic parameters of semiconductor layers, and devices geometry. The dependence of both, n(s) and c(2D) on inverse gate polarisation has been compared with literature values. The influence of donor doping concentration N(D) to characteristics n(s) (v(G)) and c(2D)(v(G)) has been investigated by the suggested analytical model. Also, the current-gain cutoff frequency f(t) has been calculated for a short channel MODFET. The discrepancy between the calculated f(t) and literature value has been discussed.", title = "Evaluating of MODFET gate capacitance and current gain cutoff frequency", pages = "311-314", url = "https://hdl.handle.net/21.15107/rcub_vinar_6453" }
Šašić, R., Čevizović, D., Galović, S.,& Ramovic, R.. (2004). Evaluating of MODFET gate capacitance and current gain cutoff frequency. , 311-314. https://hdl.handle.net/21.15107/rcub_vinar_6453
Šašić R, Čevizović D, Galović S, Ramovic R. Evaluating of MODFET gate capacitance and current gain cutoff frequency. 2004;:311-314. https://hdl.handle.net/21.15107/rcub_vinar_6453 .
Šašić, Rajko, Čevizović, Dalibor, Galović, Slobodanka, Ramovic, R, "Evaluating of MODFET gate capacitance and current gain cutoff frequency" (2004):311-314, https://hdl.handle.net/21.15107/rcub_vinar_6453 .