RBS/simulated annealing analysis of silicide formation in Fe/Si systems
Апстракт
Thin Fe films were deposited by de sputtering onto Si to thicknesses between 50 and 120 nm. This was followed by implantation of 350 keV As to doses between 5 x 10(15) and 2.5 x 10(16) cm(-2), or 300 keV Xe to doses between 5 x 1015 and 1 x 10(16) cm(-2). Some of the samples were subsequently annealed at 900 degrees C for 2.5 h. The mixing between the Si and Fe was studied with Rutherford backscattering (RBS). The analysis of the RES data was done with the combinatorial optimisation simulated annealing (SA) algorithm. Although a homogeneous silicide layer is not formed, the superposition of the Si and Fe profiles after annealing leads to the formation of regions of beta-FeSi2, as is demonstrated by temperature dependent photoabsorption experiments which show the existence of a band gap of 0.87 eV at room temperature. (C) 1998 Elsevier Science B.V.
Кључне речи:
Rutherford backscattering / simulated annealing / silicides / ion beam mixingИзвор:
Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 1998, 139, 1-4, 235-238Напомена:
- 5th European Conference on Accelerators in Applied Research and Technology (ECAART5), Aug 26-30, 1997, Eindhoven Univ, Eindhoven, Netherlands
DOI: 10.1016/S0168-583X(97)00964-6
ISSN: 0168-583X
WoS: 000074586200035
Scopus: 2-s2.0-0032041555
Колекције
Институција/група
VinčaTY - JOUR AU - Barradas, NP AU - Jeynes, C AU - Homewood, Kevin P. AU - Sealy, BJ AU - Milosavljević, Momir PY - 1998 UR - https://vinar.vin.bg.ac.rs/handle/123456789/6237 AB - Thin Fe films were deposited by de sputtering onto Si to thicknesses between 50 and 120 nm. This was followed by implantation of 350 keV As to doses between 5 x 10(15) and 2.5 x 10(16) cm(-2), or 300 keV Xe to doses between 5 x 1015 and 1 x 10(16) cm(-2). Some of the samples were subsequently annealed at 900 degrees C for 2.5 h. The mixing between the Si and Fe was studied with Rutherford backscattering (RBS). The analysis of the RES data was done with the combinatorial optimisation simulated annealing (SA) algorithm. Although a homogeneous silicide layer is not formed, the superposition of the Si and Fe profiles after annealing leads to the formation of regions of beta-FeSi2, as is demonstrated by temperature dependent photoabsorption experiments which show the existence of a band gap of 0.87 eV at room temperature. (C) 1998 Elsevier Science B.V. T2 - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms T1 - RBS/simulated annealing analysis of silicide formation in Fe/Si systems VL - 139 IS - 1-4 SP - 235 EP - 238 DO - 10.1016/S0168-583X(97)00964-6 ER -
@article{ author = "Barradas, NP and Jeynes, C and Homewood, Kevin P. and Sealy, BJ and Milosavljević, Momir", year = "1998", abstract = "Thin Fe films were deposited by de sputtering onto Si to thicknesses between 50 and 120 nm. This was followed by implantation of 350 keV As to doses between 5 x 10(15) and 2.5 x 10(16) cm(-2), or 300 keV Xe to doses between 5 x 1015 and 1 x 10(16) cm(-2). Some of the samples were subsequently annealed at 900 degrees C for 2.5 h. The mixing between the Si and Fe was studied with Rutherford backscattering (RBS). The analysis of the RES data was done with the combinatorial optimisation simulated annealing (SA) algorithm. Although a homogeneous silicide layer is not formed, the superposition of the Si and Fe profiles after annealing leads to the formation of regions of beta-FeSi2, as is demonstrated by temperature dependent photoabsorption experiments which show the existence of a band gap of 0.87 eV at room temperature. (C) 1998 Elsevier Science B.V.", journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms", title = "RBS/simulated annealing analysis of silicide formation in Fe/Si systems", volume = "139", number = "1-4", pages = "235-238", doi = "10.1016/S0168-583X(97)00964-6" }
Barradas, N., Jeynes, C., Homewood, K. P., Sealy, B.,& Milosavljević, M.. (1998). RBS/simulated annealing analysis of silicide formation in Fe/Si systems. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 139(1-4), 235-238. https://doi.org/10.1016/S0168-583X(97)00964-6
Barradas N, Jeynes C, Homewood KP, Sealy B, Milosavljević M. RBS/simulated annealing analysis of silicide formation in Fe/Si systems. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 1998;139(1-4):235-238. doi:10.1016/S0168-583X(97)00964-6 .
Barradas, NP, Jeynes, C, Homewood, Kevin P., Sealy, BJ, Milosavljević, Momir, "RBS/simulated annealing analysis of silicide formation in Fe/Si systems" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 139, no. 1-4 (1998):235-238, https://doi.org/10.1016/S0168-583X(97)00964-6 . .