Investigation of ion beam mixing effects in Ta/Pd bilayers deposited on Si
Apstrakt
This paper presents a study of the effects of As+ ion irradiation and vacuum thermal treatments on Ta/Pd bilayers on silicon. The layers were deposited by DC sputtering to the thickness of 60 nm (Pd) and 45 nm (Ta) on (111)Si wafers. The Ta/Pd/Si structures were then implanted with 300, 400 and 500 keV As+ ions at room temperature (RT), to the doses from 0.5-1.10(16) ions cm(-2). Thermal treatments of samples were performed in vacuum at 900 degrees C, for 10 min. Characterizations were performed by Rutherford backscattering spectroscopy and X-ray diffraction. It was found that intermixing of the components at Ta/Pd and Pd/Si interfaces depends on the value of damage energy F-D deposited by the incident ions at the interfaces. Ion bombardment at room temperature induces the formation of Pd2Si phase with polycrystalline structure. Post-implantation annealing at 900 degrees C made possible the growth of PdSi silicide. Then, the reaction of Ta with Si is enhanced by rapid silicon diffusion... through already formed PdSi phase. Consequently, the formation of TaSi2 and Ta3Si silicides at the Ta/PdSi interface occurred. (C) 1998 Elsevier Science S.A.
Ključne reči:
ion beam / Ta/Pd bilayers / vacuumIzvor:
Thin Solid Films, 1998, 317, 1-2, 274-277Napomena:
- 5th European Vacuum Conference (EVC 5) / 10th International Conference on Thin Films (ICTF 10), Sep 23-27, 1996, Univ Salamanca, Salamanca, Spain
DOI: 10.1016/S0040-6090(97)00528-2
ISSN: 0040-6090
WoS: 000074517700065
Scopus: 2-s2.0-0032048751
Kolekcije
Institucija/grupa
VinčaTY - JOUR AU - Bibić, Nataša M. AU - Milosavljević, Momir AU - Peruško, Davor AU - Jeynes, C PY - 1998 UR - https://vinar.vin.bg.ac.rs/handle/123456789/6234 AB - This paper presents a study of the effects of As+ ion irradiation and vacuum thermal treatments on Ta/Pd bilayers on silicon. The layers were deposited by DC sputtering to the thickness of 60 nm (Pd) and 45 nm (Ta) on (111)Si wafers. The Ta/Pd/Si structures were then implanted with 300, 400 and 500 keV As+ ions at room temperature (RT), to the doses from 0.5-1.10(16) ions cm(-2). Thermal treatments of samples were performed in vacuum at 900 degrees C, for 10 min. Characterizations were performed by Rutherford backscattering spectroscopy and X-ray diffraction. It was found that intermixing of the components at Ta/Pd and Pd/Si interfaces depends on the value of damage energy F-D deposited by the incident ions at the interfaces. Ion bombardment at room temperature induces the formation of Pd2Si phase with polycrystalline structure. Post-implantation annealing at 900 degrees C made possible the growth of PdSi silicide. Then, the reaction of Ta with Si is enhanced by rapid silicon diffusion through already formed PdSi phase. Consequently, the formation of TaSi2 and Ta3Si silicides at the Ta/PdSi interface occurred. (C) 1998 Elsevier Science S.A. T2 - Thin Solid Films T1 - Investigation of ion beam mixing effects in Ta/Pd bilayers deposited on Si VL - 317 IS - 1-2 SP - 274 EP - 277 DO - 10.1016/S0040-6090(97)00528-2 ER -
@article{ author = "Bibić, Nataša M. and Milosavljević, Momir and Peruško, Davor and Jeynes, C", year = "1998", abstract = "This paper presents a study of the effects of As+ ion irradiation and vacuum thermal treatments on Ta/Pd bilayers on silicon. The layers were deposited by DC sputtering to the thickness of 60 nm (Pd) and 45 nm (Ta) on (111)Si wafers. The Ta/Pd/Si structures were then implanted with 300, 400 and 500 keV As+ ions at room temperature (RT), to the doses from 0.5-1.10(16) ions cm(-2). Thermal treatments of samples were performed in vacuum at 900 degrees C, for 10 min. Characterizations were performed by Rutherford backscattering spectroscopy and X-ray diffraction. It was found that intermixing of the components at Ta/Pd and Pd/Si interfaces depends on the value of damage energy F-D deposited by the incident ions at the interfaces. Ion bombardment at room temperature induces the formation of Pd2Si phase with polycrystalline structure. Post-implantation annealing at 900 degrees C made possible the growth of PdSi silicide. Then, the reaction of Ta with Si is enhanced by rapid silicon diffusion through already formed PdSi phase. Consequently, the formation of TaSi2 and Ta3Si silicides at the Ta/PdSi interface occurred. (C) 1998 Elsevier Science S.A.", journal = "Thin Solid Films", title = "Investigation of ion beam mixing effects in Ta/Pd bilayers deposited on Si", volume = "317", number = "1-2", pages = "274-277", doi = "10.1016/S0040-6090(97)00528-2" }
Bibić, N. M., Milosavljević, M., Peruško, D.,& Jeynes, C.. (1998). Investigation of ion beam mixing effects in Ta/Pd bilayers deposited on Si. in Thin Solid Films, 317(1-2), 274-277. https://doi.org/10.1016/S0040-6090(97)00528-2
Bibić NM, Milosavljević M, Peruško D, Jeynes C. Investigation of ion beam mixing effects in Ta/Pd bilayers deposited on Si. in Thin Solid Films. 1998;317(1-2):274-277. doi:10.1016/S0040-6090(97)00528-2 .
Bibić, Nataša M., Milosavljević, Momir, Peruško, Davor, Jeynes, C, "Investigation of ion beam mixing effects in Ta/Pd bilayers deposited on Si" in Thin Solid Films, 317, no. 1-2 (1998):274-277, https://doi.org/10.1016/S0040-6090(97)00528-2 . .