Приказ основних података о документу

dc.creatorUglov, Vladimir Vasilevich
dc.creatorAbadias, Gregory
dc.creatorRovbut, A. Y.
dc.creatorZlotski, Sergey V.
dc.creatorSaladukhin, Ihar A.
dc.creatorSkuratov, Vladimir A.
dc.creatorPetrović, Srđan M.
dc.date.accessioned2018-03-01T16:13:50Z
dc.date.available2018-03-01T16:13:50Z
dc.date.issued2015
dc.identifier.issn0168-583X
dc.identifier.issn1872-9584
dc.identifier.urihttps://vinar.vin.bg.ac.rs/handle/123456789/612
dc.description.abstractThe influence of irradiation with He+ ions on the thermal stability of TiZrN and (Ti,Zr)(0.54)Al0.46N nanocrystalline films was studied. The TiZrN and (Ti,Zr)(0.54)Al0.46N films were prepared by reactive magnetron sputtering. XRD research showed that the TiZrN and (Ti,Zr)(0.54)Al0.6N films were single-phase systems (based on cubic c-(Ti,Zr)N and cubic c-(Ti,Zr,AI)N solid solutions) with nanocrystalline (grain size 30 and 21 nm, respectively) structure. The irradiation with He ions and thermal annealing up to 800 degrees C do not affect the structure and phase composition of the (Ti,Zr)(0.54)Al0.46N film. The prior irradiation of the (Ti,Zr)(0.54)Al0.46N film with He+ ions activates spinodal decomposition of the c-(Ti,Zr,Al)N solid solution after thermal annealing at 1000 degrees C due to redistribution of the components of the solid solution inside the grains. (C) 2014 Elsevier B.V. All rights reserved.en
dc.relationinfo:eu-repo/grantAgreement/MESTD/Integrated and Interdisciplinary Research (IIR or III)/45006/RS//
dc.relationBelarusian Republic Foundation for Fundamental Research [F13F-003], Centre National de la Recherche Scientifique (bilateral project CNRS/FRFRB) [EDC25728]
dc.rightsrestrictedAccessen
dc.sourceNuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atomsen
dc.subjectNanocrystalline nitridesen
dc.subjectHelium ion irradiationen
dc.subjectRadiation and thermal stabilityen
dc.subjectSpinodal decompositionen
dc.titleThermal stability of nanocrystalline (Ti,Zr)(0.54)Al0.46N films implanted by He+ ionsen
dc.typearticleen
dc.rights.licenseARR
dcterms.abstractЗлотски, С. В.; Ровбут, A. Y.; Aбадиас, Г.; Саладукхин, И. A.; Углов, В. В.; Скуратов, В. A.; Петровицх, С.;
dc.citation.volume354
dc.citation.spage269
dc.citation.epage273
dc.identifier.wos000356193900060
dc.identifier.doi10.1016/j.nimb.2014.11.012
dc.citation.rankM22
dc.type.versionpublishedVersion
dc.identifier.scopus2-s2.0-84939953835


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Приказ основних података о документу