Thermal stability of nanostructured TiZrSiN thin films subjected to helium ion irradiation
Само за регистроване кориснике
2015
Аутори
Uglov, Vladimir VasilevichAbadias, Gregory
Zlotski, Sergey V.
Saladukhin, Ihar A.
Skuratov, Vladimir A.
Leshkevich, S. S.
Petrović, Srđan M.
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
The phase stability, upon vacuum annealing up to 1000 degrees C, of nanostructured (Ti,Zr)(1-x)SixN thin films is investigated by X-ray diffraction analysis as a function of Si content (0.13 LT = x LT = 0.25) and prior irradiation with He ions (40 kV). The quaternary TiZrSiN thin films were deposited by reactive magnetron sputtering from elemental targets at the substrate temperature of 600 degrees C. It was found that the increase in Si content, x, results in the transformation of structure from nanocrystalline (x = 0.13, grain size of 11 nm) to nanocomposite state (0.190 LT x LT = 0.25, grain size of 5 nm). The phase composition of the films changes from single-phase, cubic c-(Ti,Zr)N columns with (1 1 1) preferred orientation to dual-phase system consisting of c-(Ti,Zr)N crystallites and amorphous SiNy. Irradiation with He ions at the doses of 2 x 10(16) and 5 x 1016 cm(-2) does change the phase composition of the films. It is found that the onset temperature for phase decomposition... decreases from 1000 degrees C to 800 degrees C with increasing Si content for unirradiated films. The formation of a secondary ZrN phase is observed concomitantly with increased broadening of the (2 0 0) c-(Ti,Zr)N diffraction peak. For irradiated films, the subsequent annealing at 1000 degrees C leads to decomposition of the c-(Ti,Zr)N solid solution into TiN- and ZrN-rich phases as well as crystallization of hexagonal Si3N4 phase.
Кључне речи:
Nanocomposite / Irradiation / Thermal stability / Decomposition / Solid solutionИзвор:
Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 2015, 354, 264-268Финансирање / пројекти:
- Физика и хемија са јонским сноповима (RS-45006)
- Belarusian Republic Foundation for Fundamental Research [F13F-003], region Poitou-Charentes
DOI: 10.1016/j.nimb.2014.12.043
ISSN: 0168-583X; 1872-9584
WoS: 000356193900059
Scopus: 2-s2.0-84939982355
Институција/група
VinčaTY - JOUR AU - Uglov, Vladimir Vasilevich AU - Abadias, Gregory AU - Zlotski, Sergey V. AU - Saladukhin, Ihar A. AU - Skuratov, Vladimir A. AU - Leshkevich, S. S. AU - Petrović, Srđan M. PY - 2015 UR - https://vinar.vin.bg.ac.rs/handle/123456789/611 AB - The phase stability, upon vacuum annealing up to 1000 degrees C, of nanostructured (Ti,Zr)(1-x)SixN thin films is investigated by X-ray diffraction analysis as a function of Si content (0.13 LT = x LT = 0.25) and prior irradiation with He ions (40 kV). The quaternary TiZrSiN thin films were deposited by reactive magnetron sputtering from elemental targets at the substrate temperature of 600 degrees C. It was found that the increase in Si content, x, results in the transformation of structure from nanocrystalline (x = 0.13, grain size of 11 nm) to nanocomposite state (0.190 LT x LT = 0.25, grain size of 5 nm). The phase composition of the films changes from single-phase, cubic c-(Ti,Zr)N columns with (1 1 1) preferred orientation to dual-phase system consisting of c-(Ti,Zr)N crystallites and amorphous SiNy. Irradiation with He ions at the doses of 2 x 10(16) and 5 x 1016 cm(-2) does change the phase composition of the films. It is found that the onset temperature for phase decomposition decreases from 1000 degrees C to 800 degrees C with increasing Si content for unirradiated films. The formation of a secondary ZrN phase is observed concomitantly with increased broadening of the (2 0 0) c-(Ti,Zr)N diffraction peak. For irradiated films, the subsequent annealing at 1000 degrees C leads to decomposition of the c-(Ti,Zr)N solid solution into TiN- and ZrN-rich phases as well as crystallization of hexagonal Si3N4 phase. T2 - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms T1 - Thermal stability of nanostructured TiZrSiN thin films subjected to helium ion irradiation VL - 354 SP - 264 EP - 268 DO - 10.1016/j.nimb.2014.12.043 ER -
@article{ author = "Uglov, Vladimir Vasilevich and Abadias, Gregory and Zlotski, Sergey V. and Saladukhin, Ihar A. and Skuratov, Vladimir A. and Leshkevich, S. S. and Petrović, Srđan M.", year = "2015", abstract = "The phase stability, upon vacuum annealing up to 1000 degrees C, of nanostructured (Ti,Zr)(1-x)SixN thin films is investigated by X-ray diffraction analysis as a function of Si content (0.13 LT = x LT = 0.25) and prior irradiation with He ions (40 kV). The quaternary TiZrSiN thin films were deposited by reactive magnetron sputtering from elemental targets at the substrate temperature of 600 degrees C. It was found that the increase in Si content, x, results in the transformation of structure from nanocrystalline (x = 0.13, grain size of 11 nm) to nanocomposite state (0.190 LT x LT = 0.25, grain size of 5 nm). The phase composition of the films changes from single-phase, cubic c-(Ti,Zr)N columns with (1 1 1) preferred orientation to dual-phase system consisting of c-(Ti,Zr)N crystallites and amorphous SiNy. Irradiation with He ions at the doses of 2 x 10(16) and 5 x 1016 cm(-2) does change the phase composition of the films. It is found that the onset temperature for phase decomposition decreases from 1000 degrees C to 800 degrees C with increasing Si content for unirradiated films. The formation of a secondary ZrN phase is observed concomitantly with increased broadening of the (2 0 0) c-(Ti,Zr)N diffraction peak. For irradiated films, the subsequent annealing at 1000 degrees C leads to decomposition of the c-(Ti,Zr)N solid solution into TiN- and ZrN-rich phases as well as crystallization of hexagonal Si3N4 phase.", journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms", title = "Thermal stability of nanostructured TiZrSiN thin films subjected to helium ion irradiation", volume = "354", pages = "264-268", doi = "10.1016/j.nimb.2014.12.043" }
Uglov, V. V., Abadias, G., Zlotski, S. V., Saladukhin, I. A., Skuratov, V. A., Leshkevich, S. S.,& Petrović, S. M.. (2015). Thermal stability of nanostructured TiZrSiN thin films subjected to helium ion irradiation. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 354, 264-268. https://doi.org/10.1016/j.nimb.2014.12.043
Uglov VV, Abadias G, Zlotski SV, Saladukhin IA, Skuratov VA, Leshkevich SS, Petrović SM. Thermal stability of nanostructured TiZrSiN thin films subjected to helium ion irradiation. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2015;354:264-268. doi:10.1016/j.nimb.2014.12.043 .
Uglov, Vladimir Vasilevich, Abadias, Gregory, Zlotski, Sergey V., Saladukhin, Ihar A., Skuratov, Vladimir A., Leshkevich, S. S., Petrović, Srđan M., "Thermal stability of nanostructured TiZrSiN thin films subjected to helium ion irradiation" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 354 (2015):264-268, https://doi.org/10.1016/j.nimb.2014.12.043 . .