Carrier Control in Polycrystalline ZnO:Ga Thin Films via Nitrogen Implantation
Nema prikaza
Autori
Shtereva, K. S.Novotny, I.
Tvarozek, V.
Vojs, Marian
Flickyngerova, S.
Sutta, P.
Vincze, A.
Milosavljević, Momir
Jeynes, C.
Peng, N.
Članak u časopisu
Metapodaci
Prikaz svih podataka o dokumentuApstrakt
The electrical characteristics of gallium-doped zinc oxide (ZnO:Ga) thin films prepared by rf diode sputtering were altered via nitrogen implantation by performing two implants at 40 keV and 80 keV with doses of 1 x 10(15) and 1 x 10(16) cm(-2) to achieve a p-type semiconductor. An implantation of 1 x 10(15) cm(-2) N+-ions yielded a p-type with hole concentrations 10(17)-10(18) cm(-3) in some as-implanted samples. The films annealed at temperatures above 200 degrees C in O-2 and above 400 degrees C in N-2 were n-type with electron concentrations 10(17)-10(20) cm(-3). The higher nitrogen concentration (confirmed by SRIM and SIMS), in the films implanted with a 1 x 10(16) cm(-2) dose, resulted in lower electron concentrations, respectively, higher resistivity, due to compensation of donors by nitrogen acceptors. The electron concentrations ratio n((1) (x) (1015))/ n((1 x 1016)) decreases with increasing annealing temperature. Hall measurements showed that 1 x 10(16) cm(-2) N-implanted fi...lms became p-type after low temperature annealing in O-2 at 200 degrees C and in N-2 at 400 degrees C with hole concentrations of 3.2 x 10(17) cm(-3) and 1.6 x 10(19) cm(-3), respectively. Nitrogen-implanted ZnO:Ga films showed a c-axes preferred orientation of the crystallites. Annealing is shown to increase the average transmittance ( GT 80%) of the films and to cause bandgap widening (3.19-3.3 eV). (C) 2012 The Electrochemical Society. All rights reserved.
Izvor:
ECS Journal of Solid State Science and Technology, 2012, 1, 5, P237-P240Finansiranje / projekti:
- SPIRIT - Support of Public and Industrial Research using Ion Beam Technology (EU-FP7-227012)
- Slovak Research and Development Agencies [VEGA 1/0459/12, 1/0787/09], APVV [LPP-0094-09, SK-SRB-0012-09], CENTEM [CZ.1.05/2.1.00/03.0088], R and D OP from the ERDF of the MEYS CR
DOI: 10.1149/2.003206jss
ISSN: 2162-8769
WoS: 000319448000013
Scopus: 2-s2.0-84887445587
Kolekcije
Institucija/grupa
VinčaTY - JOUR AU - Shtereva, K. S. AU - Novotny, I. AU - Tvarozek, V. AU - Vojs, Marian AU - Flickyngerova, S. AU - Sutta, P. AU - Vincze, A. AU - Milosavljević, Momir AU - Jeynes, C. AU - Peng, N. PY - 2012 UR - https://vinar.vin.bg.ac.rs/handle/123456789/5518 AB - The electrical characteristics of gallium-doped zinc oxide (ZnO:Ga) thin films prepared by rf diode sputtering were altered via nitrogen implantation by performing two implants at 40 keV and 80 keV with doses of 1 x 10(15) and 1 x 10(16) cm(-2) to achieve a p-type semiconductor. An implantation of 1 x 10(15) cm(-2) N+-ions yielded a p-type with hole concentrations 10(17)-10(18) cm(-3) in some as-implanted samples. The films annealed at temperatures above 200 degrees C in O-2 and above 400 degrees C in N-2 were n-type with electron concentrations 10(17)-10(20) cm(-3). The higher nitrogen concentration (confirmed by SRIM and SIMS), in the films implanted with a 1 x 10(16) cm(-2) dose, resulted in lower electron concentrations, respectively, higher resistivity, due to compensation of donors by nitrogen acceptors. The electron concentrations ratio n((1) (x) (1015))/ n((1 x 1016)) decreases with increasing annealing temperature. Hall measurements showed that 1 x 10(16) cm(-2) N-implanted films became p-type after low temperature annealing in O-2 at 200 degrees C and in N-2 at 400 degrees C with hole concentrations of 3.2 x 10(17) cm(-3) and 1.6 x 10(19) cm(-3), respectively. Nitrogen-implanted ZnO:Ga films showed a c-axes preferred orientation of the crystallites. Annealing is shown to increase the average transmittance ( GT 80%) of the films and to cause bandgap widening (3.19-3.3 eV). (C) 2012 The Electrochemical Society. All rights reserved. T2 - ECS Journal of Solid State Science and Technology T1 - Carrier Control in Polycrystalline ZnO:Ga Thin Films via Nitrogen Implantation VL - 1 IS - 5 SP - P237 EP - P240 DO - 10.1149/2.003206jss ER -
@article{ author = "Shtereva, K. S. and Novotny, I. and Tvarozek, V. and Vojs, Marian and Flickyngerova, S. and Sutta, P. and Vincze, A. and Milosavljević, Momir and Jeynes, C. and Peng, N.", year = "2012", abstract = "The electrical characteristics of gallium-doped zinc oxide (ZnO:Ga) thin films prepared by rf diode sputtering were altered via nitrogen implantation by performing two implants at 40 keV and 80 keV with doses of 1 x 10(15) and 1 x 10(16) cm(-2) to achieve a p-type semiconductor. An implantation of 1 x 10(15) cm(-2) N+-ions yielded a p-type with hole concentrations 10(17)-10(18) cm(-3) in some as-implanted samples. The films annealed at temperatures above 200 degrees C in O-2 and above 400 degrees C in N-2 were n-type with electron concentrations 10(17)-10(20) cm(-3). The higher nitrogen concentration (confirmed by SRIM and SIMS), in the films implanted with a 1 x 10(16) cm(-2) dose, resulted in lower electron concentrations, respectively, higher resistivity, due to compensation of donors by nitrogen acceptors. The electron concentrations ratio n((1) (x) (1015))/ n((1 x 1016)) decreases with increasing annealing temperature. Hall measurements showed that 1 x 10(16) cm(-2) N-implanted films became p-type after low temperature annealing in O-2 at 200 degrees C and in N-2 at 400 degrees C with hole concentrations of 3.2 x 10(17) cm(-3) and 1.6 x 10(19) cm(-3), respectively. Nitrogen-implanted ZnO:Ga films showed a c-axes preferred orientation of the crystallites. Annealing is shown to increase the average transmittance ( GT 80%) of the films and to cause bandgap widening (3.19-3.3 eV). (C) 2012 The Electrochemical Society. All rights reserved.", journal = "ECS Journal of Solid State Science and Technology", title = "Carrier Control in Polycrystalline ZnO:Ga Thin Films via Nitrogen Implantation", volume = "1", number = "5", pages = "P237-P240", doi = "10.1149/2.003206jss" }
Shtereva, K. S., Novotny, I., Tvarozek, V., Vojs, M., Flickyngerova, S., Sutta, P., Vincze, A., Milosavljević, M., Jeynes, C.,& Peng, N.. (2012). Carrier Control in Polycrystalline ZnO:Ga Thin Films via Nitrogen Implantation. in ECS Journal of Solid State Science and Technology, 1(5), P237-P240. https://doi.org/10.1149/2.003206jss
Shtereva KS, Novotny I, Tvarozek V, Vojs M, Flickyngerova S, Sutta P, Vincze A, Milosavljević M, Jeynes C, Peng N. Carrier Control in Polycrystalline ZnO:Ga Thin Films via Nitrogen Implantation. in ECS Journal of Solid State Science and Technology. 2012;1(5):P237-P240. doi:10.1149/2.003206jss .
Shtereva, K. S., Novotny, I., Tvarozek, V., Vojs, Marian, Flickyngerova, S., Sutta, P., Vincze, A., Milosavljević, Momir, Jeynes, C., Peng, N., "Carrier Control in Polycrystalline ZnO:Ga Thin Films via Nitrogen Implantation" in ECS Journal of Solid State Science and Technology, 1, no. 5 (2012):P237-P240, https://doi.org/10.1149/2.003206jss . .