Приказ основних података о документу

Defect generation in non-nitrided and nitrided sputtered gate oxides under post-irradiation Fowler-Nordheim constant current stress

dc.creatorJelenkovic, Emil V.
dc.creatorKovcevic, Milojko
dc.creatorJha, S.
dc.creatorTong, K. Y.
dc.creatorNikezić, Dragoslav
dc.date.accessioned2018-03-01T23:10:36Z
dc.date.available2018-03-01T23:10:36Z
dc.date.issued2013
dc.identifier.issn0167-9317
dc.identifier.urihttps://vinar.vin.bg.ac.rs/handle/123456789/5323
dc.description.abstractMetal oxide semiconductor (MOS) capacitors were fabricated with nitrided and non-nitrided sputtered oxides. The MOS structures were exposed to 2 Mrad gamma-ray dose and stored in a dry ambient for one year. Post-irradiation stability of MOS capacitors was investigated by applying Fowler-Nordheim constant current stress and monitoring the positive charge, border traps and interface states generation. It was found that nitridation increased the resistance of sputtered oxides to various defects generation under irradiation, electrical and combined radiation-electrical stress. The improved stability is explained in part by compensation of oxygen vacancy defects and Pb centers by nitrogen. (C) 2012 Elsevier B.V. All rights reserved.en
dc.relationHong Kong Polytechnic University, Ministry of Science and Technology Development of Republic of Serbia [04311]
dc.rightsrestrictedAccessen
dc.sourceMicroelectronic Engineeringen
dc.subjectSilicon oxideen
dc.subjectNitrided oxideen
dc.subjectSputtered oxideen
dc.subjectGamma radiationen
dc.subjectOxide defectsen
dc.titleDefect generation in non-nitrided and nitrided sputtered gate oxides under post-irradiation Fowler-Nordheim constant current stressen
dc.typearticleen
dcterms.abstractЈеленковиц, Емил В.; Никезиц, Д.; Тонг, К. Y.; Ковцевиц, Милојко; Јха, С.;
dc.citation.volume104
dc.citation.spage90
dc.citation.epage94
dc.identifier.wos000315245000017
dc.identifier.doi10.1016/j.mee.2012.10.016
dc.citation.rankM22
dc.identifier.scopus2-s2.0-84872400570


Документи

ДатотекеВеличинаФорматПреглед

Уз овај запис нема датотека.

Овај документ се појављује у следећим колекцијама

Приказ основних података о документу