Defect generation in non-nitrided and nitrided sputtered gate oxides under post-irradiation Fowler-Nordheim constant current stress
Apstrakt
Metal oxide semiconductor (MOS) capacitors were fabricated with nitrided and non-nitrided sputtered oxides. The MOS structures were exposed to 2 Mrad gamma-ray dose and stored in a dry ambient for one year. Post-irradiation stability of MOS capacitors was investigated by applying Fowler-Nordheim constant current stress and monitoring the positive charge, border traps and interface states generation. It was found that nitridation increased the resistance of sputtered oxides to various defects generation under irradiation, electrical and combined radiation-electrical stress. The improved stability is explained in part by compensation of oxygen vacancy defects and Pb centers by nitrogen. (C) 2012 Elsevier B.V. All rights reserved.
Ključne reči:
Silicon oxide / Nitrided oxide / Sputtered oxide / Gamma radiation / Oxide defectsIzvor:
Microelectronic Engineering, 2013, 104, 90-94Finansiranje / projekti:
- Hong Kong Polytechnic University, Ministry of Science and Technology Development of Republic of Serbia [04311]
DOI: 10.1016/j.mee.2012.10.016
ISSN: 0167-9317
WoS: 000315245000017
Scopus: 2-s2.0-84872400570
Kolekcije
Institucija/grupa
VinčaTY - JOUR AU - Jelenkovic, Emil V. AU - Kovcevic, Milojko AU - Jha, S. AU - Tong, K. Y. AU - Nikezić, Dragoslav PY - 2013 UR - https://vinar.vin.bg.ac.rs/handle/123456789/5323 AB - Metal oxide semiconductor (MOS) capacitors were fabricated with nitrided and non-nitrided sputtered oxides. The MOS structures were exposed to 2 Mrad gamma-ray dose and stored in a dry ambient for one year. Post-irradiation stability of MOS capacitors was investigated by applying Fowler-Nordheim constant current stress and monitoring the positive charge, border traps and interface states generation. It was found that nitridation increased the resistance of sputtered oxides to various defects generation under irradiation, electrical and combined radiation-electrical stress. The improved stability is explained in part by compensation of oxygen vacancy defects and Pb centers by nitrogen. (C) 2012 Elsevier B.V. All rights reserved. T2 - Microelectronic Engineering T1 - Defect generation in non-nitrided and nitrided sputtered gate oxides under post-irradiation Fowler-Nordheim constant current stress VL - 104 SP - 90 EP - 94 DO - 10.1016/j.mee.2012.10.016 ER -
@article{ author = "Jelenkovic, Emil V. and Kovcevic, Milojko and Jha, S. and Tong, K. Y. and Nikezić, Dragoslav", year = "2013", abstract = "Metal oxide semiconductor (MOS) capacitors were fabricated with nitrided and non-nitrided sputtered oxides. The MOS structures were exposed to 2 Mrad gamma-ray dose and stored in a dry ambient for one year. Post-irradiation stability of MOS capacitors was investigated by applying Fowler-Nordheim constant current stress and monitoring the positive charge, border traps and interface states generation. It was found that nitridation increased the resistance of sputtered oxides to various defects generation under irradiation, electrical and combined radiation-electrical stress. The improved stability is explained in part by compensation of oxygen vacancy defects and Pb centers by nitrogen. (C) 2012 Elsevier B.V. All rights reserved.", journal = "Microelectronic Engineering", title = "Defect generation in non-nitrided and nitrided sputtered gate oxides under post-irradiation Fowler-Nordheim constant current stress", volume = "104", pages = "90-94", doi = "10.1016/j.mee.2012.10.016" }
Jelenkovic, E. V., Kovcevic, M., Jha, S., Tong, K. Y.,& Nikezić, D.. (2013). Defect generation in non-nitrided and nitrided sputtered gate oxides under post-irradiation Fowler-Nordheim constant current stress. in Microelectronic Engineering, 104, 90-94. https://doi.org/10.1016/j.mee.2012.10.016
Jelenkovic EV, Kovcevic M, Jha S, Tong KY, Nikezić D. Defect generation in non-nitrided and nitrided sputtered gate oxides under post-irradiation Fowler-Nordheim constant current stress. in Microelectronic Engineering. 2013;104:90-94. doi:10.1016/j.mee.2012.10.016 .
Jelenkovic, Emil V., Kovcevic, Milojko, Jha, S., Tong, K. Y., Nikezić, Dragoslav, "Defect generation in non-nitrided and nitrided sputtered gate oxides under post-irradiation Fowler-Nordheim constant current stress" in Microelectronic Engineering, 104 (2013):90-94, https://doi.org/10.1016/j.mee.2012.10.016 . .