Comparison of tunneling times in isotropic and anisotropic media

Abstract

We present a comparative analysis of the tunneling times of electromagnetic (EM) waves propagating in isotropic and anisotropic media. First, suitable expressions for the tunneling times in a layered periodic material, with anisotropic properties originating from its structure, are derived, followed by numerical calculations performed for a new type of anisotropic semiconductor metamaterial. In the first case, we have considered a layered structure which contains two differently doped In0.53Ga0.47As semiconductor layers. The second structure under investigation is made of alternately placed layers of doped In0.53Ga0.47As and undoped Al0.48Ga0.52As. The investigation of the dwell time as a function of incident wave frequency has revealed the existence of two peaks, one of which may be interpreted as a consequence of anisotropy, while the other one corresponds to the peak related to the absorption and the group delay. Both of these two peaks are affected by variations of layers doping densities. Furthermore, at increased incident angles of incoming EM waves, the dwell time peak occurs at the upper boundary of the frequency interval, for which the structure exhibits negative refractive index.