Depth profiling of high energy nitrogen ions implanted in the (100), (110) and randomly oriented silicon crystals
Само за регистроване кориснике
2012
Аутори
Erich, MarkoPetrović, Srđan M.
Kokkoris, Michael
Lagoyannis, Anastasios
Paneta, Valentina
Harissopulos, S.
Telečki, Igor N.
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
This work reports on the experimentally obtained depth profiles of 4 MeV N-14(2+) ions implanted in the (100), (110) and randomly oriented silicon crystals. The ion fluence was 10(17) particles/cm(2), The nitrogen depth profiling has been performed using the Nuclear Reaction Analysis (NRA) method, via the study of N-14(d,alpha(0))C-12 and N-14(d,alpha(1))C-12 nuclear reactions, and with the implementation of SRIM 2010 and SIMNRA computer simulation codes. For the randomly oriented silicon crystal, change of the density of silicon matrix and the nitrogen bubble formation have been proposed as the explanation for the difference between the experimental and simulated nitrogen depth profiles. During the implantation, the RBS/C spectra were measured on the nitrogen implanted and on the virgin crystal spots. These spectra provide information on the amorphization of the silicon crystals induced by the ion implantation.
Кључне речи:
Channeling implantation / Nuclear Reaction Analysis / RBS/C / Silicon amorphizationИзвор:
Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 2012, 274, 87-92Финансирање / пројекти:
- SPIRIT - Support of Public and Industrial Research using Ion Beam Technology (EU-FP7-227012)
- Физика и хемија са јонским сноповима (RS-MESTD-Integrated and Interdisciplinary Research (IIR or III)-45006)
DOI: 10.1016/j.nimb.2011.12.008
ISSN: 0168-583X; 1872-9584
WoS: 000301611900011
Scopus: 2-s2.0-84855171283
Институција/група
VinčaTY - JOUR AU - Erich, Marko AU - Petrović, Srđan M. AU - Kokkoris, Michael AU - Lagoyannis, Anastasios AU - Paneta, Valentina AU - Harissopulos, S. AU - Telečki, Igor N. PY - 2012 UR - https://vinar.vin.bg.ac.rs/handle/123456789/4749 AB - This work reports on the experimentally obtained depth profiles of 4 MeV N-14(2+) ions implanted in the (100), (110) and randomly oriented silicon crystals. The ion fluence was 10(17) particles/cm(2), The nitrogen depth profiling has been performed using the Nuclear Reaction Analysis (NRA) method, via the study of N-14(d,alpha(0))C-12 and N-14(d,alpha(1))C-12 nuclear reactions, and with the implementation of SRIM 2010 and SIMNRA computer simulation codes. For the randomly oriented silicon crystal, change of the density of silicon matrix and the nitrogen bubble formation have been proposed as the explanation for the difference between the experimental and simulated nitrogen depth profiles. During the implantation, the RBS/C spectra were measured on the nitrogen implanted and on the virgin crystal spots. These spectra provide information on the amorphization of the silicon crystals induced by the ion implantation. T2 - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms T1 - Depth profiling of high energy nitrogen ions implanted in the (100), (110) and randomly oriented silicon crystals VL - 274 SP - 87 EP - 92 DO - 10.1016/j.nimb.2011.12.008 ER -
@article{ author = "Erich, Marko and Petrović, Srđan M. and Kokkoris, Michael and Lagoyannis, Anastasios and Paneta, Valentina and Harissopulos, S. and Telečki, Igor N.", year = "2012", abstract = "This work reports on the experimentally obtained depth profiles of 4 MeV N-14(2+) ions implanted in the (100), (110) and randomly oriented silicon crystals. The ion fluence was 10(17) particles/cm(2), The nitrogen depth profiling has been performed using the Nuclear Reaction Analysis (NRA) method, via the study of N-14(d,alpha(0))C-12 and N-14(d,alpha(1))C-12 nuclear reactions, and with the implementation of SRIM 2010 and SIMNRA computer simulation codes. For the randomly oriented silicon crystal, change of the density of silicon matrix and the nitrogen bubble formation have been proposed as the explanation for the difference between the experimental and simulated nitrogen depth profiles. During the implantation, the RBS/C spectra were measured on the nitrogen implanted and on the virgin crystal spots. These spectra provide information on the amorphization of the silicon crystals induced by the ion implantation.", journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms", title = "Depth profiling of high energy nitrogen ions implanted in the (100), (110) and randomly oriented silicon crystals", volume = "274", pages = "87-92", doi = "10.1016/j.nimb.2011.12.008" }
Erich, M., Petrović, S. M., Kokkoris, M., Lagoyannis, A., Paneta, V., Harissopulos, S.,& Telečki, I. N.. (2012). Depth profiling of high energy nitrogen ions implanted in the (100), (110) and randomly oriented silicon crystals. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 274, 87-92. https://doi.org/10.1016/j.nimb.2011.12.008
Erich M, Petrović SM, Kokkoris M, Lagoyannis A, Paneta V, Harissopulos S, Telečki IN. Depth profiling of high energy nitrogen ions implanted in the (100), (110) and randomly oriented silicon crystals. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2012;274:87-92. doi:10.1016/j.nimb.2011.12.008 .
Erich, Marko, Petrović, Srđan M., Kokkoris, Michael, Lagoyannis, Anastasios, Paneta, Valentina, Harissopulos, S., Telečki, Igor N., "Depth profiling of high energy nitrogen ions implanted in the (100), (110) and randomly oriented silicon crystals" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 274 (2012):87-92, https://doi.org/10.1016/j.nimb.2011.12.008 . .