Crystallographic characteristics and fine structures of semiconducting transition metal silicides
Apstrakt
Silicide-based photonic materials have attracted a great deal of research interest due to their compatibility with the well-developed silicon technology. Extensive efforts have been made for the synthesis and characterisation of these materials. This paper covers some aspects of the microstructural and crystallographic characteristics of ion beam synthesised silicides such as the semiconducting iron and ruthenium silicides, using transmission electron microscopy. A previously predicted new orientation relationship has been found to exist between the Si substrate and ion beam synthesised beta FeSi2 nanocrystals, which are free of 90 degrees rotational order domain boundaries. (C) 2011 Elsevier B. V. All rights reserved.
Ključne reči:
Photonic silicides / Transmission electron microscopy / Crystallography / FeSi2 / Ru2Si3Izvor:
Thin Solid Films, 2011, 519, 24, 8446-8450
DOI: 10.1016/j.tsf.2011.05.036
ISSN: 0040-6090
WoS: 000300181200004
Scopus: 2-s2.0-80053574505
Kolekcije
Institucija/grupa
VinčaTY - JOUR AU - Shao, G. AU - Gao, Y. AU - Xia, X. H. AU - Milosavljević, Momir PY - 2011 UR - https://vinar.vin.bg.ac.rs/handle/123456789/4680 AB - Silicide-based photonic materials have attracted a great deal of research interest due to their compatibility with the well-developed silicon technology. Extensive efforts have been made for the synthesis and characterisation of these materials. This paper covers some aspects of the microstructural and crystallographic characteristics of ion beam synthesised silicides such as the semiconducting iron and ruthenium silicides, using transmission electron microscopy. A previously predicted new orientation relationship has been found to exist between the Si substrate and ion beam synthesised beta FeSi2 nanocrystals, which are free of 90 degrees rotational order domain boundaries. (C) 2011 Elsevier B. V. All rights reserved. T2 - Thin Solid Films T1 - Crystallographic characteristics and fine structures of semiconducting transition metal silicides VL - 519 IS - 24 SP - 8446 EP - 8450 DO - 10.1016/j.tsf.2011.05.036 ER -
@article{ author = "Shao, G. and Gao, Y. and Xia, X. H. and Milosavljević, Momir", year = "2011", abstract = "Silicide-based photonic materials have attracted a great deal of research interest due to their compatibility with the well-developed silicon technology. Extensive efforts have been made for the synthesis and characterisation of these materials. This paper covers some aspects of the microstructural and crystallographic characteristics of ion beam synthesised silicides such as the semiconducting iron and ruthenium silicides, using transmission electron microscopy. A previously predicted new orientation relationship has been found to exist between the Si substrate and ion beam synthesised beta FeSi2 nanocrystals, which are free of 90 degrees rotational order domain boundaries. (C) 2011 Elsevier B. V. All rights reserved.", journal = "Thin Solid Films", title = "Crystallographic characteristics and fine structures of semiconducting transition metal silicides", volume = "519", number = "24", pages = "8446-8450", doi = "10.1016/j.tsf.2011.05.036" }
Shao, G., Gao, Y., Xia, X. H.,& Milosavljević, M.. (2011). Crystallographic characteristics and fine structures of semiconducting transition metal silicides. in Thin Solid Films, 519(24), 8446-8450. https://doi.org/10.1016/j.tsf.2011.05.036
Shao G, Gao Y, Xia XH, Milosavljević M. Crystallographic characteristics and fine structures of semiconducting transition metal silicides. in Thin Solid Films. 2011;519(24):8446-8450. doi:10.1016/j.tsf.2011.05.036 .
Shao, G., Gao, Y., Xia, X. H., Milosavljević, Momir, "Crystallographic characteristics and fine structures of semiconducting transition metal silicides" in Thin Solid Films, 519, no. 24 (2011):8446-8450, https://doi.org/10.1016/j.tsf.2011.05.036 . .