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dc.creatorŽivković, Lada
dc.creatorLair, Virginie
dc.creatorLupan, Oleg
dc.creatorRinguedé, Armelle
dc.date.accessioned2018-03-01T21:40:13Z
dc.date.available2018-03-01T21:40:13Z
dc.date.issued2011
dc.identifier.issn0040-6090
dc.identifier.urihttps://vinar.vin.bg.ac.rs/handle/123456789/4270
dc.description.abstractSamarium (Sm)-doped ceria (CeO2) (SDC) is a promising material for high temperature electrochemical devices. Our work demonstrates that thin SDC films can be prepared by a cost-effective electrodeposition method at a low-temperature (30 degrees C) and -0.8 V/SCE (saturated calomel electrode) potential. Analysis of the structural properties of the obtained SDC films, as-grown and annealed at 600 degrees C, has been carried out by X-ray diffraction (XRD). Morphology and film composition were studied using scanning electronic microscopy and energy dispersive X-ray analysis. Vibrational properties were determined by Raman spectroscopy. The effects of samarium addition into the deposition bath on the final film composition have been studied. According to XRD results, film crystallographic properties are directly linked to the percentage of Sm incorporated in the CeO2 lattice. We report on the electrochemical deposition of the SDC films performed over a large range of Sm additions (0-30%). The effect of temperature annealing has been studied as well. (C) 2011 Elsevier B.V. All rights reserved.en
dc.relationinfo:eu-repo/grantAgreement/MESTD/Integrated and Interdisciplinary Research (IIR or III)/45012/RS//
dc.relationANR (Agence National de la Recherche-France) [ANRJCJC06-0131], CNRS [UMR7575]
dc.rightsrestrictedAccessen
dc.sourceThin Solid Filmsen
dc.subjectSamarium-doped ceriaen
dc.subjectElectrodepositionen
dc.subjectThin filmsen
dc.subjectFuel cellsen
dc.subjectX-ray diffractionen
dc.subjectRaman spectroscopyen
dc.titleEffect of samarium addition and annealing on the properties of electrodeposited ceria thin filmsen
dc.typearticleen
dcterms.abstractЛупан, О.; Зивковиц, Л.; Лаир, В.; Рингуеде, A.;
dc.citation.volume519
dc.citation.issue11
dc.citation.spage3538
dc.citation.epage3543
dc.identifier.wos000289333400016
dc.identifier.doi10.1016/j.tsf.2011.01.245
dc.citation.rankM21
dc.identifier.scopus2-s2.0-79952738035


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