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Scaling properties in single collision model of light ion reflection
(Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 2004)
Light ion reflection from solids in the keV energy region has been studied within the single collision model. Particle and energy reflection coefficients as functions of the scaled transport cross section have been calculated ...
A novel procedure for elimination of the peak deviations in LEIS spectra influenced by the primary ion beam profile
(Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 2006)
Quantitative surface composition analysis using low energy ion scattering (LEIS) can be obstructed by the deviations introduced by the primary beam profile and the analyzer optics. A novel procedure is presented for excluding ...
Backscattering/transmission of 2 MeV He++ ions quantitative correlation study
(Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 2015)
In this work we report on detailed findings of planar channeling oscillations of 2 MeV He++ particles in (1 1 0) silicon crystal. The exact correlation and coherence mechanism between confined particles oscillating ...
Using proton beams as a diagnostic tool in carbon nanotubes
(Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 2012)
We investigate spatial distributions of protons of the initial energy of 10-40 MeV after channeling through the (6, 4) and (11, 9) single-wall carbon nanotubes of the length of 1 mu m. The proton incident angle is varied ...
Identification of the types of carbon nanotubes using donut effects
(Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 2012)
We investigate the angular distributions of protons of initial energy 10 MeV after channeling through a (6,4), (8,6), (11,9) and (15,10) single-wall carbon nanotube, each of length 1 mu m. The interaction between the proton ...
Interpolation formula for particle reflection coefficient of keV light ions obliquely incident on heavy solids
(Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 2011)
The particle reflection coefficient of light keV ions backscattered from heavy solids as a function of the ion incidence angle has been determined by a suitable interpolation formula. The formula has two fitting parameters ...
Ultrafast band-structure variations induced by fast Au ions in BeO
(Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 2011)
Auger-electron spectra associated with Be atoms in the pure metal lattice and in an oxide have been investigated for 1.8 MeV/u Au-129(41+) ions and 2.7 keV primary electrons. The excitation and local energy transfer by ...
Ion beam mixing in Fe/Si and Ta/Si bilayers: Possible effects of ion charges
(Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 2003)
Thin Fe and Ta layers of 30-45 nm thickness, deposited via magnetron sputtering on Si (100) substrates, were bombarded at room temperature with 100 kev Ar1+ or Ar8+ or with 250 keV Xe1+ or Xe19+ ions in order to test the ...
Interface mixing in Ta/Si bilayers with Ar ions
(Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 2000)
We report on the room-temperature synthesis of the low-resistivity TaSi2 phase using ion-beam mixing of Ta/Si bilayers with Ar ions. The formation of the silicide phase is observed for different damage energies deposited ...
Formation of dislocation loops in silicon by ion irradiation for silicon light emitting diodes
(Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 2008)
We have studied the influence of the ion species, ion energy, fluence, irradiation temperature and post-implantation annealing on the formation of shallow dislocation loops in silicon, for fabrication of silicon light ...