Reliability of Semiconductor and Gas-Filled Diodes for Over-Voltage Protection Exposed to Ionizing Radiation
Apstrakt
The wide-spread use of semiconductor and gas-filled diodes for non-linear over-voltage protection results in a variety of possible working conditions. It is therefore essential to have a thorough insight into their reliability in exploitation environments which imply exposure to ionizing radiation. The aim of this paper is to investigate the influence of irradiation on over-voltage diode characteristics by exposing the diodes to californium-252 combined neutron/gamma radiation field. The irradiation of semiconductor over-voltage diodes causes severe degradation of their protection characteristics. On the other hand, gas-filled over-voltage diodes exhibit a temporal improvement of performance. The results are presented with the accompanying theoretical interpretations of the observed changes in over-voltage diode behaviour, based on the interaction of radiation with materials constituting the diodes.
Ključne reči:
diodes / nuclear radiation effects / over-voltage protectionIzvor:
Nuclear technology and radiation protection, 2009, 24, 2, 132-137Finansiranje / projekti:
- Ministry of Science and Technological Development of the Republic of Serbia [141046]
DOI: 10.2298/NTRP0902132S
ISSN: 1451-3994
WoS: 000270413200010
Scopus: 2-s2.0-70649096063
Kolekcije
Institucija/grupa
VinčaTY - JOUR AU - Stanković, Koviljka AU - Vujisić, Miloš Lj. AU - Dolicanin, Edin PY - 2009 UR - https://vinar.vin.bg.ac.rs/handle/123456789/3251 AB - The wide-spread use of semiconductor and gas-filled diodes for non-linear over-voltage protection results in a variety of possible working conditions. It is therefore essential to have a thorough insight into their reliability in exploitation environments which imply exposure to ionizing radiation. The aim of this paper is to investigate the influence of irradiation on over-voltage diode characteristics by exposing the diodes to californium-252 combined neutron/gamma radiation field. The irradiation of semiconductor over-voltage diodes causes severe degradation of their protection characteristics. On the other hand, gas-filled over-voltage diodes exhibit a temporal improvement of performance. The results are presented with the accompanying theoretical interpretations of the observed changes in over-voltage diode behaviour, based on the interaction of radiation with materials constituting the diodes. T2 - Nuclear technology and radiation protection T1 - Reliability of Semiconductor and Gas-Filled Diodes for Over-Voltage Protection Exposed to Ionizing Radiation VL - 24 IS - 2 SP - 132 EP - 137 DO - 10.2298/NTRP0902132S ER -
@article{ author = "Stanković, Koviljka and Vujisić, Miloš Lj. and Dolicanin, Edin", year = "2009", abstract = "The wide-spread use of semiconductor and gas-filled diodes for non-linear over-voltage protection results in a variety of possible working conditions. It is therefore essential to have a thorough insight into their reliability in exploitation environments which imply exposure to ionizing radiation. The aim of this paper is to investigate the influence of irradiation on over-voltage diode characteristics by exposing the diodes to californium-252 combined neutron/gamma radiation field. The irradiation of semiconductor over-voltage diodes causes severe degradation of their protection characteristics. On the other hand, gas-filled over-voltage diodes exhibit a temporal improvement of performance. The results are presented with the accompanying theoretical interpretations of the observed changes in over-voltage diode behaviour, based on the interaction of radiation with materials constituting the diodes.", journal = "Nuclear technology and radiation protection", title = "Reliability of Semiconductor and Gas-Filled Diodes for Over-Voltage Protection Exposed to Ionizing Radiation", volume = "24", number = "2", pages = "132-137", doi = "10.2298/NTRP0902132S" }
Stanković, K., Vujisić, M. Lj.,& Dolicanin, E.. (2009). Reliability of Semiconductor and Gas-Filled Diodes for Over-Voltage Protection Exposed to Ionizing Radiation. in Nuclear technology and radiation protection, 24(2), 132-137. https://doi.org/10.2298/NTRP0902132S
Stanković K, Vujisić ML, Dolicanin E. Reliability of Semiconductor and Gas-Filled Diodes for Over-Voltage Protection Exposed to Ionizing Radiation. in Nuclear technology and radiation protection. 2009;24(2):132-137. doi:10.2298/NTRP0902132S .
Stanković, Koviljka, Vujisić, Miloš Lj., Dolicanin, Edin, "Reliability of Semiconductor and Gas-Filled Diodes for Over-Voltage Protection Exposed to Ionizing Radiation" in Nuclear technology and radiation protection, 24, no. 2 (2009):132-137, https://doi.org/10.2298/NTRP0902132S . .