Nonconvex Hamiltonians in three dimensional level set simulations of the wet etching of silicon
Apstrakt
It is shown that profile evolution during anisotropic wet etching of silicon can be described by the nonconvex Hamiltonian arising in the Hamilton-Jacobi equation for the level set function. Etching rate function is determined on the basis of the silicon symmetry properties. An extension of the sparse field method for solving three dimensional level set equations in the case of nonconvex Hamiltonians is presented. (c) 2006 American Institute of Physics.
Izvor:
Applied Physics Letters, 2006, 89, 21
DOI: 10.1063/1.2388860
ISSN: 0003-6951
WoS: 000242220000059
Scopus: 2-s2.0-33845448918
Kolekcije
Institucija/grupa
VinčaTY - JOUR AU - Rađenović, Branislav AU - Radmilovic-Radjenovic, Marija AU - Mitrić, Miodrag PY - 2006 UR - https://vinar.vin.bg.ac.rs/handle/123456789/3121 AB - It is shown that profile evolution during anisotropic wet etching of silicon can be described by the nonconvex Hamiltonian arising in the Hamilton-Jacobi equation for the level set function. Etching rate function is determined on the basis of the silicon symmetry properties. An extension of the sparse field method for solving three dimensional level set equations in the case of nonconvex Hamiltonians is presented. (c) 2006 American Institute of Physics. T2 - Applied Physics Letters T1 - Nonconvex Hamiltonians in three dimensional level set simulations of the wet etching of silicon VL - 89 IS - 21 DO - 10.1063/1.2388860 ER -
@article{ author = "Rađenović, Branislav and Radmilovic-Radjenovic, Marija and Mitrić, Miodrag", year = "2006", abstract = "It is shown that profile evolution during anisotropic wet etching of silicon can be described by the nonconvex Hamiltonian arising in the Hamilton-Jacobi equation for the level set function. Etching rate function is determined on the basis of the silicon symmetry properties. An extension of the sparse field method for solving three dimensional level set equations in the case of nonconvex Hamiltonians is presented. (c) 2006 American Institute of Physics.", journal = "Applied Physics Letters", title = "Nonconvex Hamiltonians in three dimensional level set simulations of the wet etching of silicon", volume = "89", number = "21", doi = "10.1063/1.2388860" }
Rađenović, B., Radmilovic-Radjenovic, M.,& Mitrić, M.. (2006). Nonconvex Hamiltonians in three dimensional level set simulations of the wet etching of silicon. in Applied Physics Letters, 89(21). https://doi.org/10.1063/1.2388860
Rađenović B, Radmilovic-Radjenovic M, Mitrić M. Nonconvex Hamiltonians in three dimensional level set simulations of the wet etching of silicon. in Applied Physics Letters. 2006;89(21). doi:10.1063/1.2388860 .
Rađenović, Branislav, Radmilovic-Radjenovic, Marija, Mitrić, Miodrag, "Nonconvex Hamiltonians in three dimensional level set simulations of the wet etching of silicon" in Applied Physics Letters, 89, no. 21 (2006), https://doi.org/10.1063/1.2388860 . .