Microscopic Properties of the SiO2/Si Interface Growth Based on Numerical Simulations
Abstract
To improve the understanding of the microscopic properties of the silicon oxidation process, we perform numerical simulations of thermal SiO2 thin film growth. Therefrom, we analyze the growth kinetics as well as the evolution of the SiO2/Si interface formation. The oxidation rate in the early stages of growth is governed by two processes : the rapid initial formation of the oxidation front, and its subsequent diffusion. The corresponding oxidation kinetics, arising from the simulations, provides a rather good description of a large variety of experimental data, with the minimum number of variable parameters. The effect of external parameters, such as temperature and pressure, can be explained in terms of scaling concepts. It is found that the temporal evolution of SiO2 concentration at a given fixed crystalline cross section is continuous, while the spatial distribution at any given time shows abrupt (step like) behavior, decaying from 100 % to zero concentration within just a few lat...tice constants. The results of the simulations suggest a very simple phenomenological approach for modeling of microstructural aspects of the SiO2/Si system
Source:
Brazilian Journal of Physics, 1997, 27, 2, 325-333Funding / projects:
- Conselho Nacional de Desenvolvimento Cientifico e Tecnologico (CNPq), Financiadora de Estudos e Projetos (FINEP)
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VinčaTY - JOUR AU - Stosic, Borko D. AU - da Silva, Jr., Eronides F. PY - 1997 UR - https://vinar.vin.bg.ac.rs/handle/123456789/2736 AB - To improve the understanding of the microscopic properties of the silicon oxidation process, we perform numerical simulations of thermal SiO2 thin film growth. Therefrom, we analyze the growth kinetics as well as the evolution of the SiO2/Si interface formation. The oxidation rate in the early stages of growth is governed by two processes : the rapid initial formation of the oxidation front, and its subsequent diffusion. The corresponding oxidation kinetics, arising from the simulations, provides a rather good description of a large variety of experimental data, with the minimum number of variable parameters. The effect of external parameters, such as temperature and pressure, can be explained in terms of scaling concepts. It is found that the temporal evolution of SiO2 concentration at a given fixed crystalline cross section is continuous, while the spatial distribution at any given time shows abrupt (step like) behavior, decaying from 100 % to zero concentration within just a few lattice constants. The results of the simulations suggest a very simple phenomenological approach for modeling of microstructural aspects of the SiO2/Si system T2 - Brazilian Journal of Physics T1 - Microscopic Properties of the SiO2/Si Interface Growth Based on Numerical Simulations VL - 27 IS - 2 SP - 325 EP - 333 UR - https://hdl.handle.net/21.15107/rcub_vinar_2736 ER -
@article{ author = "Stosic, Borko D. and da Silva, Jr., Eronides F.", year = "1997", abstract = "To improve the understanding of the microscopic properties of the silicon oxidation process, we perform numerical simulations of thermal SiO2 thin film growth. Therefrom, we analyze the growth kinetics as well as the evolution of the SiO2/Si interface formation. The oxidation rate in the early stages of growth is governed by two processes : the rapid initial formation of the oxidation front, and its subsequent diffusion. The corresponding oxidation kinetics, arising from the simulations, provides a rather good description of a large variety of experimental data, with the minimum number of variable parameters. The effect of external parameters, such as temperature and pressure, can be explained in terms of scaling concepts. It is found that the temporal evolution of SiO2 concentration at a given fixed crystalline cross section is continuous, while the spatial distribution at any given time shows abrupt (step like) behavior, decaying from 100 % to zero concentration within just a few lattice constants. The results of the simulations suggest a very simple phenomenological approach for modeling of microstructural aspects of the SiO2/Si system", journal = "Brazilian Journal of Physics", title = "Microscopic Properties of the SiO2/Si Interface Growth Based on Numerical Simulations", volume = "27", number = "2", pages = "325-333", url = "https://hdl.handle.net/21.15107/rcub_vinar_2736" }
Stosic, B. D.,& da Silva, Jr., E. F.. (1997). Microscopic Properties of the SiO2/Si Interface Growth Based on Numerical Simulations. in Brazilian Journal of Physics, 27(2), 325-333. https://hdl.handle.net/21.15107/rcub_vinar_2736
Stosic BD, da Silva JEF. Microscopic Properties of the SiO2/Si Interface Growth Based on Numerical Simulations. in Brazilian Journal of Physics. 1997;27(2):325-333. https://hdl.handle.net/21.15107/rcub_vinar_2736 .
Stosic, Borko D., da Silva, Jr., Eronides F., "Microscopic Properties of the SiO2/Si Interface Growth Based on Numerical Simulations" in Brazilian Journal of Physics, 27, no. 2 (1997):325-333, https://hdl.handle.net/21.15107/rcub_vinar_2736 .