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dc.creatorIvanovski, Valentin N.
dc.creatorCekić, Božidar Đ.
dc.creatorUmićević, Ana
dc.creatorBarudžija, Tanja
dc.creatorSchumacher, G.
dc.creatorMađarević, Ivan
dc.creatorKoteski, Vasil J.
dc.date.accessioned2018-03-01T15:30:00Z
dc.date.available2018-03-01T15:30:00Z
dc.date.issued2015
dc.identifier.issn0925-8388
dc.identifier.issn1873-4669
dc.identifier.urihttps://vinar.vin.bg.ac.rs/handle/123456789/249
dc.description.abstractPerturbed angular correlation measurements of the hyperfine interactions of the Ta-181 probe in the polycrystalline intermetallic Ni3Al doped with 0.5 and 5 at.% Hf were performed in the temperature range 78-1230 K. The observed local hyperfine fields at the Hf-181/Ta-181 probe showed that Hf atoms are substituting on Al sites in the L1(2) structure of Ni3Al. The two minor electric quadrupole interactions that were found for each Ni3Al alloy are discussed taking into account the L1(2) cubic structure and its two tetragonal distortions: D0(22) and L6(0). The presence of two tetragonal transformations of the parent cubic L1(2) lattice in 0.5 at.% Hf and 5 at.% Hf doped Ni3Al was revealed by X-ray diffraction. The ab initio calculations, performed with the projector augmented wave method correctly reproduce the experimental results and enable discussion on the structural and electronic properties of the polycrystalline alloys. The experimental and theoretical investigations showed that hafnium additions prefer aluminum sites in Ni3Al. (C) 2014 Elsevier B.V. All rights reserved.en
dc.relationinfo:eu-repo/grantAgreement/MESTD/Basic Research (BR or ON)/171001/RS//
dc.rightsrestrictedAccessen
dc.sourceJournal of Alloys and Compoundsen
dc.subjectIntermetallicsen
dc.subjectElectronic propertiesen
dc.subjectPerturbed angular correlationsen
dc.subjectPACen
dc.subjectX-ray diffractionen
dc.titleSite preference of Hf dopant in Ni3Al alloys: A perturbed angular correlation studyen
dc.typearticleen
dcterms.abstractМадаревић Иван; Умићевић, Aна; Баруджија Тања; Котески Васил Ј.; Ивановски Валентин; Сцхумацхер, Г.; Цекиц, Б.;
dc.citation.volume622
dc.citation.spage541
dc.citation.epage547
dc.identifier.wos000345749500082
dc.identifier.doi10.1016/j.jallcom.2014.10.132
dc.citation.rankM21a
dc.type.versionpublishedVersion
dc.identifier.scopus2-s2.0-84910648884


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