Mixing and silicide formation during Xe-ion beam irradiations of Ta/Si bilayers

dc.creator	Dhar, S
dc.creator	Milosavljević, Momir
dc.creator	Bibić, Nataša M.
dc.creator	Lieb, KP
dc.date.accessioned	2018-03-01T18:55:27Z
dc.date.available	2018-03-01T18:55:27Z
dc.date.issued	2000
dc.identifier.issn	0370-1972
dc.identifier.uri	https://vinar.vin.bg.ac.rs/handle/123456789/2396
dc.description.abstract	Thin Ta layers deposited on Si (100) substrates were irradiated with 475 keV Xe+ ions to fluences of (0.5-2) x 10(16) ions/cm(2) at temperatures between room temperature and 400 degreesC. By means of Rutherford Backscattering Spectrometry, the interface mixing and tantalum silicide formation were monitored as function of the ion fluence. TaSi2 phase formation was verified using X-ray diffraction. The interface broadening variance was found to depend linearly on the ion fluence and was explained with the help of a compound formation model involving global thermal spikes.	en
dc.rights	restrictedAccess	en
dc.source	Physica Status Solidi. B: Basic Research	en
dc.title	Mixing and silicide formation during Xe-ion beam irradiations of Ta/Si bilayers	en
dc.type	article	en
dcterms.abstract	Дхар, С; Милосављевић Момир; Бибиц, Н; Лиеб, КП;
dc.citation.volume	222
dc.citation.issue	1
dc.citation.spage	295
dc.citation.epage	302
dc.identifier.wos	000165822100027
dc.identifier.doi	10.1002/1521-3951(200011)222:1 LT 295::AID-PSSB295 GT 3.3.CO;2-5
dc.citation.rank	M23

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