Direct synthesis of beta-FeSi2 by ion beam mixing of Fe/Si bilayers
Abstract
The iron di-silicide beta-FeSi2 is a promising direct band gap semiconductor but difficult to produce. Here, the successful direct synthesis of this phase by ion beam mixing of Fe/Si bilayers at temperatures in the range of 450 to 550 degrees C is reported. The obtained single-phase beta-FeSi2 layers and their structure are confirmed by Rutherford backscattering spectrometry, X-ray diffraction and conversion electron Mossbauer spectroscopy. PACS: 61.80.Jh; 68.55.Nq; 61.82.Fk.
Source:
Applied Physics. A: Materials Science and Processing, 2000, 71, 1, 43-45Collections
Institution/Community
VinčaTY - JOUR AU - Milosavljević, Momir AU - Dhar, S AU - Schaaf, P AU - Bibić, Nataša M. AU - Han, M AU - Lieb, KP PY - 2000 UR - https://vinar.vin.bg.ac.rs/handle/123456789/2366 AB - The iron di-silicide beta-FeSi2 is a promising direct band gap semiconductor but difficult to produce. Here, the successful direct synthesis of this phase by ion beam mixing of Fe/Si bilayers at temperatures in the range of 450 to 550 degrees C is reported. The obtained single-phase beta-FeSi2 layers and their structure are confirmed by Rutherford backscattering spectrometry, X-ray diffraction and conversion electron Mossbauer spectroscopy. PACS: 61.80.Jh; 68.55.Nq; 61.82.Fk. T2 - Applied Physics. A: Materials Science and Processing T1 - Direct synthesis of beta-FeSi2 by ion beam mixing of Fe/Si bilayers VL - 71 IS - 1 SP - 43 EP - 45 UR - https://hdl.handle.net/21.15107/rcub_vinar_2366 ER -
@article{ author = "Milosavljević, Momir and Dhar, S and Schaaf, P and Bibić, Nataša M. and Han, M and Lieb, KP", year = "2000", abstract = "The iron di-silicide beta-FeSi2 is a promising direct band gap semiconductor but difficult to produce. Here, the successful direct synthesis of this phase by ion beam mixing of Fe/Si bilayers at temperatures in the range of 450 to 550 degrees C is reported. The obtained single-phase beta-FeSi2 layers and their structure are confirmed by Rutherford backscattering spectrometry, X-ray diffraction and conversion electron Mossbauer spectroscopy. PACS: 61.80.Jh; 68.55.Nq; 61.82.Fk.", journal = "Applied Physics. A: Materials Science and Processing", title = "Direct synthesis of beta-FeSi2 by ion beam mixing of Fe/Si bilayers", volume = "71", number = "1", pages = "43-45", url = "https://hdl.handle.net/21.15107/rcub_vinar_2366" }
Milosavljević, M., Dhar, S., Schaaf, P., Bibić, N. M., Han, M.,& Lieb, K.. (2000). Direct synthesis of beta-FeSi2 by ion beam mixing of Fe/Si bilayers. in Applied Physics. A: Materials Science and Processing, 71(1), 43-45. https://hdl.handle.net/21.15107/rcub_vinar_2366
Milosavljević M, Dhar S, Schaaf P, Bibić NM, Han M, Lieb K. Direct synthesis of beta-FeSi2 by ion beam mixing of Fe/Si bilayers. in Applied Physics. A: Materials Science and Processing. 2000;71(1):43-45. https://hdl.handle.net/21.15107/rcub_vinar_2366 .
Milosavljević, Momir, Dhar, S, Schaaf, P, Bibić, Nataša M., Han, M, Lieb, KP, "Direct synthesis of beta-FeSi2 by ion beam mixing of Fe/Si bilayers" in Applied Physics. A: Materials Science and Processing, 71, no. 1 (2000):43-45, https://hdl.handle.net/21.15107/rcub_vinar_2366 .