The effects of implanted arsenic on Ti-silicide formation
Апстракт
The influence of implanted arsenic on Ti-silicidation processes in TiN/Ti/Si-substrate structures was investigated. The Ti layers were deposited to 47-96 nm by ion sputtering, which was followed by reactive sputter deposition of 58-80 nm TiN layers. Complete structures were implanted with As+ ions at 300-500 keV, to the doses from 1x10(15)-1x10(16) ions/cm(2). After implantation the samples were annealed in vacuum, for 2-20 min at 650 degrees C-900 degrees C. The obtained structures were analyzed with RBS, EBS, XRD, SEM and TEM techniques, combined with thickness profile and sheet resistivity measurements. Direct ion implantation yields only local intermixing at Ti/Si interface and no other considerable redistribution of components. Post implantation annealing leads to formation of Ti-silicides, incomplete at 650 degrees C, almost complete formation of TiSi2 at 750 degrees C, and a complete consumption of the interposed Ti layer in formation of the C54 TiSi2 phase at 900 degrees C. The... silicidation kinetics strongly depends on the dose of implanted arsenic. Low implantation dose, 1x10(15) ions/cm(2), enhances silicidation, resulting in a complete Ti-Si reaction, and in much sharper TiN/TiSi2 and TiSi2/Si interface compared to the unimplanted samples. The net result is a uniform silicidation front, preferred orientation of epitaxial TiSi2 crystal grains, and a low level of surface topography. Higher implanted doses, of 0.5-1x10(16) ions/cm(2), slow down the reaction due to high concentrations of arsenic, the excess arsenic being segregated towards the surface.
Кључне речи:
titanium silicides / silicidation / annealing / phase formation / interface / reaction kinetics / silicon / arsenic ion implantation / ion beam mixing / RBS analysis / electron microscopyИзвор:
Solid State Phenomena, 2000, 71, 147-171Колекције
Институција/група
VinčaTY - JOUR AU - Milosavljević, Momir AU - Bibić, Nataša M. AU - Peruško, Davor AU - Jeynes, C AU - Bangert, U PY - 2000 UR - https://vinar.vin.bg.ac.rs/handle/123456789/2329 AB - The influence of implanted arsenic on Ti-silicidation processes in TiN/Ti/Si-substrate structures was investigated. The Ti layers were deposited to 47-96 nm by ion sputtering, which was followed by reactive sputter deposition of 58-80 nm TiN layers. Complete structures were implanted with As+ ions at 300-500 keV, to the doses from 1x10(15)-1x10(16) ions/cm(2). After implantation the samples were annealed in vacuum, for 2-20 min at 650 degrees C-900 degrees C. The obtained structures were analyzed with RBS, EBS, XRD, SEM and TEM techniques, combined with thickness profile and sheet resistivity measurements. Direct ion implantation yields only local intermixing at Ti/Si interface and no other considerable redistribution of components. Post implantation annealing leads to formation of Ti-silicides, incomplete at 650 degrees C, almost complete formation of TiSi2 at 750 degrees C, and a complete consumption of the interposed Ti layer in formation of the C54 TiSi2 phase at 900 degrees C. The silicidation kinetics strongly depends on the dose of implanted arsenic. Low implantation dose, 1x10(15) ions/cm(2), enhances silicidation, resulting in a complete Ti-Si reaction, and in much sharper TiN/TiSi2 and TiSi2/Si interface compared to the unimplanted samples. The net result is a uniform silicidation front, preferred orientation of epitaxial TiSi2 crystal grains, and a low level of surface topography. Higher implanted doses, of 0.5-1x10(16) ions/cm(2), slow down the reaction due to high concentrations of arsenic, the excess arsenic being segregated towards the surface. T2 - Solid State Phenomena T1 - The effects of implanted arsenic on Ti-silicide formation VL - 71 SP - 147 EP - 171 DO - 10.4028/www.scientific.net/SSP.71.147 ER -
@article{ author = "Milosavljević, Momir and Bibić, Nataša M. and Peruško, Davor and Jeynes, C and Bangert, U", year = "2000", abstract = "The influence of implanted arsenic on Ti-silicidation processes in TiN/Ti/Si-substrate structures was investigated. The Ti layers were deposited to 47-96 nm by ion sputtering, which was followed by reactive sputter deposition of 58-80 nm TiN layers. Complete structures were implanted with As+ ions at 300-500 keV, to the doses from 1x10(15)-1x10(16) ions/cm(2). After implantation the samples were annealed in vacuum, for 2-20 min at 650 degrees C-900 degrees C. The obtained structures were analyzed with RBS, EBS, XRD, SEM and TEM techniques, combined with thickness profile and sheet resistivity measurements. Direct ion implantation yields only local intermixing at Ti/Si interface and no other considerable redistribution of components. Post implantation annealing leads to formation of Ti-silicides, incomplete at 650 degrees C, almost complete formation of TiSi2 at 750 degrees C, and a complete consumption of the interposed Ti layer in formation of the C54 TiSi2 phase at 900 degrees C. The silicidation kinetics strongly depends on the dose of implanted arsenic. Low implantation dose, 1x10(15) ions/cm(2), enhances silicidation, resulting in a complete Ti-Si reaction, and in much sharper TiN/TiSi2 and TiSi2/Si interface compared to the unimplanted samples. The net result is a uniform silicidation front, preferred orientation of epitaxial TiSi2 crystal grains, and a low level of surface topography. Higher implanted doses, of 0.5-1x10(16) ions/cm(2), slow down the reaction due to high concentrations of arsenic, the excess arsenic being segregated towards the surface.", journal = "Solid State Phenomena", title = "The effects of implanted arsenic on Ti-silicide formation", volume = "71", pages = "147-171", doi = "10.4028/www.scientific.net/SSP.71.147" }
Milosavljević, M., Bibić, N. M., Peruško, D., Jeynes, C.,& Bangert, U.. (2000). The effects of implanted arsenic on Ti-silicide formation. in Solid State Phenomena, 71, 147-171. https://doi.org/10.4028/www.scientific.net/SSP.71.147
Milosavljević M, Bibić NM, Peruško D, Jeynes C, Bangert U. The effects of implanted arsenic on Ti-silicide formation. in Solid State Phenomena. 2000;71:147-171. doi:10.4028/www.scientific.net/SSP.71.147 .
Milosavljević, Momir, Bibić, Nataša M., Peruško, Davor, Jeynes, C, Bangert, U, "The effects of implanted arsenic on Ti-silicide formation" in Solid State Phenomena, 71 (2000):147-171, https://doi.org/10.4028/www.scientific.net/SSP.71.147 . .