Simulation of the early stages of thin SiO2 film growth
Abstract
To gain a better understanding of the silicon oxidation process, we perform numerical simulation of thermal SiO2 thin-film growth. It is shown that the oxidation rate in the early stages of growth is governed by two processes: the rapid initial formation of the oxidation front and its subsequent diffusion. The resulting oxidation rate provides a rather good description of the experimental data with the minimum number of variable parameters, suggesting that the effect of external parameters (such as temperature and pressure) can be explained in terms of scaling concepts. The results of the simulation are also in agreement with the fitting of experimental data to a power law x(ox)=s+at(b) (where x(ox) is the measured SiO2 film thickness and t the oxidation time) predicted by a simple model for thin SiO2 film growth.
Source:
Semiconductor Science and Technology, 1997, 12, 8, 1038-1045Funding / projects:
- Conselho Nacional de Desenvolvimento Cientıfico e Tecnologico (CNPq) and a grant from the Financiadora de Estudos e Projetos (FINEP)
DOI: 10.1088/0268-1242/12/8/018
ISSN: 0268-1242
WoS: A1997XQ21400017
Scopus: 2-s2.0-0031212217
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Institution/Community
VinčaTY - JOUR AU - da Silva, Eronildes Felisberto AU - Stošić, Borko D. PY - 1997 UR - https://vinar.vin.bg.ac.rs/handle/123456789/2081 AB - To gain a better understanding of the silicon oxidation process, we perform numerical simulation of thermal SiO2 thin-film growth. It is shown that the oxidation rate in the early stages of growth is governed by two processes: the rapid initial formation of the oxidation front and its subsequent diffusion. The resulting oxidation rate provides a rather good description of the experimental data with the minimum number of variable parameters, suggesting that the effect of external parameters (such as temperature and pressure) can be explained in terms of scaling concepts. The results of the simulation are also in agreement with the fitting of experimental data to a power law x(ox)=s+at(b) (where x(ox) is the measured SiO2 film thickness and t the oxidation time) predicted by a simple model for thin SiO2 film growth. T2 - Semiconductor Science and Technology T1 - Simulation of the early stages of thin SiO2 film growth VL - 12 IS - 8 SP - 1038 EP - 1045 DO - 10.1088/0268-1242/12/8/018 ER -
@article{ author = "da Silva, Eronildes Felisberto and Stošić, Borko D.", year = "1997", abstract = "To gain a better understanding of the silicon oxidation process, we perform numerical simulation of thermal SiO2 thin-film growth. It is shown that the oxidation rate in the early stages of growth is governed by two processes: the rapid initial formation of the oxidation front and its subsequent diffusion. The resulting oxidation rate provides a rather good description of the experimental data with the minimum number of variable parameters, suggesting that the effect of external parameters (such as temperature and pressure) can be explained in terms of scaling concepts. The results of the simulation are also in agreement with the fitting of experimental data to a power law x(ox)=s+at(b) (where x(ox) is the measured SiO2 film thickness and t the oxidation time) predicted by a simple model for thin SiO2 film growth.", journal = "Semiconductor Science and Technology", title = "Simulation of the early stages of thin SiO2 film growth", volume = "12", number = "8", pages = "1038-1045", doi = "10.1088/0268-1242/12/8/018" }
da Silva, E. F.,& Stošić, B. D.. (1997). Simulation of the early stages of thin SiO2 film growth. in Semiconductor Science and Technology, 12(8), 1038-1045. https://doi.org/10.1088/0268-1242/12/8/018
da Silva EF, Stošić BD. Simulation of the early stages of thin SiO2 film growth. in Semiconductor Science and Technology. 1997;12(8):1038-1045. doi:10.1088/0268-1242/12/8/018 .
da Silva, Eronildes Felisberto, Stošić, Borko D., "Simulation of the early stages of thin SiO2 film growth" in Semiconductor Science and Technology, 12, no. 8 (1997):1038-1045, https://doi.org/10.1088/0268-1242/12/8/018 . .