NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs
Authors
Davidović, VojkanDanković, Danijel
Golubović, Snežana
Đorić-Veljković, Snežana
Manić, Ivica
Prijić, Zoran
Prijić, Aneta
Stojadinović, Ninoslav
Stanković, Srboljub
![](/themes/MirageVinar/images/orcid.png)
Article (Published version)
![](/themes/MirageVinar//images/creativecommons/arr.png)
Metadata
Show full item recordAbstract
In this paper we provide an overview of instabilities observed in commercial power VDMOSFETs subjected to irradiation, NBT stress, and to consecutive exposure to them. The results have indicated that irradiation of previously NBT stressed devices leads to additional threshold voltage shift, while NBT stress effects in previously irradiated devices depend on the gate bias applied during irradiation and on the total dose received. This points to the importance of the order of applied stresses, indicating that for proper insight into the prediction of device behaviour not only harsh conditions, but also the order of exposure have to be considered. It has also been shown that changes in the densities of oxide trapped charge and interface traps during spontaneous recovery after each of applied stresses can be significant, thus leading to additional instability, even though the threshold voltage seems to remain stable, pointing to the need for clarifying the responsible mechanisms.
Keywords:
Negative bias temperature instability (NBTI) / irradiation effects / responsible mechanisms / oxide trapped charge / interface traps / spontaneous recoverySource:
Facta universitatis - series: Electronics and Energetics, 2018, 31, 3, 367-388Funding / projects:
- Development, optimization and application of energy-harvesting sensors technology (RS-MESTD-Technological Development (TD or TR)-32026)
- Characterization, analysis and modeling of physical phenomena in thin layers for application in MOS nanodevices (RS-MESTD-Basic Research (BR or ON)-171026)
Collections
Institution/Community
VinčaTY - JOUR AU - Davidović, Vojkan AU - Danković, Danijel AU - Golubović, Snežana AU - Đorić-Veljković, Snežana AU - Manić, Ivica AU - Prijić, Zoran AU - Prijić, Aneta AU - Stojadinović, Ninoslav AU - Stanković, Srboljub PY - 2018 UR - https://vinar.vin.bg.ac.rs/handle/123456789/12131 AB - In this paper we provide an overview of instabilities observed in commercial power VDMOSFETs subjected to irradiation, NBT stress, and to consecutive exposure to them. The results have indicated that irradiation of previously NBT stressed devices leads to additional threshold voltage shift, while NBT stress effects in previously irradiated devices depend on the gate bias applied during irradiation and on the total dose received. This points to the importance of the order of applied stresses, indicating that for proper insight into the prediction of device behaviour not only harsh conditions, but also the order of exposure have to be considered. It has also been shown that changes in the densities of oxide trapped charge and interface traps during spontaneous recovery after each of applied stresses can be significant, thus leading to additional instability, even though the threshold voltage seems to remain stable, pointing to the need for clarifying the responsible mechanisms. T2 - Facta universitatis - series: Electronics and Energetics T1 - NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs VL - 31 IS - 3 SP - 367 EP - 388 DO - 10.2298/FUEE1803367D ER -
@article{ author = "Davidović, Vojkan and Danković, Danijel and Golubović, Snežana and Đorić-Veljković, Snežana and Manić, Ivica and Prijić, Zoran and Prijić, Aneta and Stojadinović, Ninoslav and Stanković, Srboljub", year = "2018", abstract = "In this paper we provide an overview of instabilities observed in commercial power VDMOSFETs subjected to irradiation, NBT stress, and to consecutive exposure to them. The results have indicated that irradiation of previously NBT stressed devices leads to additional threshold voltage shift, while NBT stress effects in previously irradiated devices depend on the gate bias applied during irradiation and on the total dose received. This points to the importance of the order of applied stresses, indicating that for proper insight into the prediction of device behaviour not only harsh conditions, but also the order of exposure have to be considered. It has also been shown that changes in the densities of oxide trapped charge and interface traps during spontaneous recovery after each of applied stresses can be significant, thus leading to additional instability, even though the threshold voltage seems to remain stable, pointing to the need for clarifying the responsible mechanisms.", journal = "Facta universitatis - series: Electronics and Energetics", title = "NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs", volume = "31", number = "3", pages = "367-388", doi = "10.2298/FUEE1803367D" }
Davidović, V., Danković, D., Golubović, S., Đorić-Veljković, S., Manić, I., Prijić, Z., Prijić, A., Stojadinović, N.,& Stanković, S.. (2018). NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs. in Facta universitatis - series: Electronics and Energetics, 31(3), 367-388. https://doi.org/10.2298/FUEE1803367D
Davidović V, Danković D, Golubović S, Đorić-Veljković S, Manić I, Prijić Z, Prijić A, Stojadinović N, Stanković S. NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs. in Facta universitatis - series: Electronics and Energetics. 2018;31(3):367-388. doi:10.2298/FUEE1803367D .
Davidović, Vojkan, Danković, Danijel, Golubović, Snežana, Đorić-Veljković, Snežana, Manić, Ivica, Prijić, Zoran, Prijić, Aneta, Stojadinović, Ninoslav, Stanković, Srboljub, "NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs" in Facta universitatis - series: Electronics and Energetics, 31, no. 3 (2018):367-388, https://doi.org/10.2298/FUEE1803367D . .