Radiation sensitive MOSFETs irradiated with various positive gate biases
Autori
Ristić, Goran S.Ilić, Stefan D.
Duane, Russell
Anđelković, Marko S.
Palma, Alberto J.
Lallena, Antonio M.
Krstić, Miloš D.
Stanković, Srboljub J.
Jakšić, Aleksandar B.
Članak u časopisu (Objavljena verzija)
Metapodaci
Prikaz svih podataka o dokumentuApstrakt
The RADiation sensitive metal-oxide-semiconductor field-effect-transistors (RADFETs) were irradiated with gamma rays up to absorbed dose of 110 Gy(H2O). The results of threshold voltage, VT, during irradiation with various positive gate biases showed the increase in VT with gate bias. The threshold voltage shift, ΔVT, during irradiation was fitted very well. The contributions of both the fixed traps (FTs) and switching traps (STs) during radiation on ΔVT were analyzed. The results show the significantly higher contribution of FTs than STs. A function that describes the dependence of threshold voltage shift and its components on gate bias was proposed, which fitted the experimental values very well. The annealing at the room temperature without gate bias of irradiated RADFETs was investigated. The recovery of threshold voltage, known as fading, slightly increase with the gate bias applied during radiation. The ΔVT shows the same changes as the threshold voltage component due to fixed st...ates, ΔVft, while there is no change in the threshold voltage component due to switching traps, ΔVst.
Ključne reči:
pMOS dosimeters / RADFETs / sensitivity / fading / radiation defectsIzvor:
Journal of Radiation Research and Applied Sciences, 2021, 14, 1, 353-357Finansiranje / projekti:
- ELICSIR - Enhancement of Sceintific Excellence and Innovation Potential in Electronic Instrumentation for Ionising Radiation Environments (EU-H2020-857558)
- Zajednička istraživanja merenja i uticaja jonizujućeg i UV zračenja u oblasti medicine i zaštite životne sredine (RS-MESTD-Integrated and Interdisciplinary Research (IIR or III)-43011)
Kolekcije
Institucija/grupa
VinčaTY - JOUR AU - Ristić, Goran S. AU - Ilić, Stefan D. AU - Duane, Russell AU - Anđelković, Marko S. AU - Palma, Alberto J. AU - Lallena, Antonio M. AU - Krstić, Miloš D. AU - Stanković, Srboljub J. AU - Jakšić, Aleksandar B. PY - 2021 UR - https://vinar.vin.bg.ac.rs/handle/123456789/12128 AB - The RADiation sensitive metal-oxide-semiconductor field-effect-transistors (RADFETs) were irradiated with gamma rays up to absorbed dose of 110 Gy(H2O). The results of threshold voltage, VT, during irradiation with various positive gate biases showed the increase in VT with gate bias. The threshold voltage shift, ΔVT, during irradiation was fitted very well. The contributions of both the fixed traps (FTs) and switching traps (STs) during radiation on ΔVT were analyzed. The results show the significantly higher contribution of FTs than STs. A function that describes the dependence of threshold voltage shift and its components on gate bias was proposed, which fitted the experimental values very well. The annealing at the room temperature without gate bias of irradiated RADFETs was investigated. The recovery of threshold voltage, known as fading, slightly increase with the gate bias applied during radiation. The ΔVT shows the same changes as the threshold voltage component due to fixed states, ΔVft, while there is no change in the threshold voltage component due to switching traps, ΔVst. T2 - Journal of Radiation Research and Applied Sciences T1 - Radiation sensitive MOSFETs irradiated with various positive gate biases VL - 14 IS - 1 SP - 353 EP - 357 DO - 10.1080/16878507.2021.1970921 ER -
@article{ author = "Ristić, Goran S. and Ilić, Stefan D. and Duane, Russell and Anđelković, Marko S. and Palma, Alberto J. and Lallena, Antonio M. and Krstić, Miloš D. and Stanković, Srboljub J. and Jakšić, Aleksandar B.", year = "2021", abstract = "The RADiation sensitive metal-oxide-semiconductor field-effect-transistors (RADFETs) were irradiated with gamma rays up to absorbed dose of 110 Gy(H2O). The results of threshold voltage, VT, during irradiation with various positive gate biases showed the increase in VT with gate bias. The threshold voltage shift, ΔVT, during irradiation was fitted very well. The contributions of both the fixed traps (FTs) and switching traps (STs) during radiation on ΔVT were analyzed. The results show the significantly higher contribution of FTs than STs. A function that describes the dependence of threshold voltage shift and its components on gate bias was proposed, which fitted the experimental values very well. The annealing at the room temperature without gate bias of irradiated RADFETs was investigated. The recovery of threshold voltage, known as fading, slightly increase with the gate bias applied during radiation. The ΔVT shows the same changes as the threshold voltage component due to fixed states, ΔVft, while there is no change in the threshold voltage component due to switching traps, ΔVst.", journal = "Journal of Radiation Research and Applied Sciences", title = "Radiation sensitive MOSFETs irradiated with various positive gate biases", volume = "14", number = "1", pages = "353-357", doi = "10.1080/16878507.2021.1970921" }
Ristić, G. S., Ilić, S. D., Duane, R., Anđelković, M. S., Palma, A. J., Lallena, A. M., Krstić, M. D., Stanković, S. J.,& Jakšić, A. B.. (2021). Radiation sensitive MOSFETs irradiated with various positive gate biases. in Journal of Radiation Research and Applied Sciences, 14(1), 353-357. https://doi.org/10.1080/16878507.2021.1970921
Ristić GS, Ilić SD, Duane R, Anđelković MS, Palma AJ, Lallena AM, Krstić MD, Stanković SJ, Jakšić AB. Radiation sensitive MOSFETs irradiated with various positive gate biases. in Journal of Radiation Research and Applied Sciences. 2021;14(1):353-357. doi:10.1080/16878507.2021.1970921 .
Ristić, Goran S., Ilić, Stefan D., Duane, Russell, Anđelković, Marko S., Palma, Alberto J., Lallena, Antonio M., Krstić, Miloš D., Stanković, Srboljub J., Jakšić, Aleksandar B., "Radiation sensitive MOSFETs irradiated with various positive gate biases" in Journal of Radiation Research and Applied Sciences, 14, no. 1 (2021):353-357, https://doi.org/10.1080/16878507.2021.1970921 . .