Electronic properties of (Ga,In)(N,As)-based heterostructures
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Poglavlje u monografiji (Objavljena verzija)
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Prikaz svih podataka o dokumentuIzvor:
Physics and application of dilute nitrides, 2004, 117-160Izdavač:
- CRC Press
Institucija/grupa
VinčaTY - CHAP AU - Klar, P. J. AU - Tomić, Stanko PY - 2004 UR - https://vinar.vin.bg.ac.rs/handle/123456789/12072 PB - CRC Press T2 - Physics and application of dilute nitrides T1 - Electronic properties of (Ga,In)(N,As)-based heterostructures SP - 117 EP - 160 UR - https://hdl.handle.net/21.15107/rcub_vinar_12072 ER -
@inbook{ author = "Klar, P. J. and Tomić, Stanko", year = "2004", publisher = "CRC Press", journal = "Physics and application of dilute nitrides", booktitle = "Electronic properties of (Ga,In)(N,As)-based heterostructures", pages = "117-160", url = "https://hdl.handle.net/21.15107/rcub_vinar_12072" }
Klar, P. J.,& Tomić, S.. (2004). Electronic properties of (Ga,In)(N,As)-based heterostructures. in Physics and application of dilute nitrides CRC Press., 117-160. https://hdl.handle.net/21.15107/rcub_vinar_12072
Klar PJ, Tomić S. Electronic properties of (Ga,In)(N,As)-based heterostructures. in Physics and application of dilute nitrides. 2004;:117-160. https://hdl.handle.net/21.15107/rcub_vinar_12072 .
Klar, P. J., Tomić, Stanko, "Electronic properties of (Ga,In)(N,As)-based heterostructures" in Physics and application of dilute nitrides (2004):117-160, https://hdl.handle.net/21.15107/rcub_vinar_12072 .